© 2011 IXYS All rights reserved 1 - 2
20110923a
CS 20-22moF1
IXYS reserves the right to change limits, test conditions and dimensions.
VDRM = VRRM = 2200 V
IT(AV) = 18 A
ITSM = 200 A
High Voltage Phase Control Thyristor
in High Voltage ISOPLUS i4-PAC™
Features
• high voltage thyristor
- for line frequency
- chip technology for long term stability
• ISOPLUS i4-PAC™
high voltage package
- isolated back surface
- enlarged creepage towards heatsink
- enlarged creepage between high
voltage pins
- application friendly pinout
- high reliability
- industry standard outline
Applications
• controlled rectifiers
- power supplies
- drives
• AC switches
• capacitor discharge control
- flash tubes
- X-ray and laser generators
Thyristor
Symbol Conditions Maximum Ratings
VDRM / RRM 2200 V
IT(AV)
IT(AV)
sine 180°; TC = 90°C
square; d = 1/3; TC = 90°C
18
16
A
A
ITSM sine 180°; t = 10 ms; VR = 0 V; TVJ = 25°C 200 A
(di/dt)cr TVJ = TVJM
f = 50 Hz; tp = 200 µs
repetitive, IT = 40 A 100 A/µs
VD = 2/3 VDRM
IG = 0.45 A
diG /dt = 0.45 A/µs
non repetitive, IT = 20 A 250 A/µs
(dv/dt)cr TVJ = TVJM; VD = 2/3 VDRM
RGK = ∞; method 1 (linear voltage rise)
2500 V/µs
VRSM
VDSM
V
VRRM
VDRM
V
Type
2300 2200 CS 20-22moF1
5
2
1
1
5
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
typ. max.
VTIT = 20 A; TVJ = 25°C
TVJ = 125°C
1.3
1.3
1.5 V
VGT
IGT
VD = 6 V 2.3
250
V
mA
VGD
IGD
VD = 2/3 VDRM; TVJ = TVJM 0.2
5
V
mA
ILtp = 10 µs; VD = 6 V
IG = 0.45 A; diG /dt = 0.45 A/µs
500 mA
IHVD = 6 V; RGK = ∞150 mA
tgd VD = ½ VDRM
IG = 0.45 A; diG /dt = 0.45 A/µs
2 µs
IR, IDVR = VRRM; VD = VDRM; TVJ = 25°C
TVJ = 125°C 2
50 µA
mA
RthJC DC current 0.92 K/W