KBJ4005G–KBJ410G
Vishay Lite–On Power Semiconducter
Rev . A2, 24-Jun-98 1 (4)
4.0A Glass Passivated Bridge Rectifier
Features
D
Glass passivated die construction
D
High case dielectric strength of 1500VRMS
D
Low reverse leakage current
D
Surge overload rating to 120A peak
D
Ideal for printed circuit board applications
D
Plastic material – UL Recognition flammability
classification 94V–0
D
This series isUL listed under recognized
component index, file number E95060
14 413
Absolute Maximum Ratings
Tj = 25
_
CParameter Test Conditions Type Symbol Value Unit
Repetitive peak reverse voltage KBJ4005G VRRM 50 V
g
=Working peak reverse voltage
DC Bl ki lt
KBJ401G
RRM
=VRWM
V
100 V
=DC Blocking voltage KBJ402G =VR200 V
KBJ404G 400 V
KBJ406G 600 V
KBJ408G 800 V
KBJ410G 1000 V
Peak forward surge current IFSM 120 A
Average forward current TC=115
°
C IFAV 4 A
Junction and storage temperature range Tj=Tstg –65...+150
°
C
Electrical Characteristics
Tj = 25
_
C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=2A VF1 V
Reverse current TC=25
°
C IR5
m
A
TC=125
°
C IR500
m
A
Diode capacitance VR=4V, f=1MHz CD40 pF
Thermal resistance
junction to case mounted on
300x300x1.6mm aluminum plate RthJC 9 K/W
KBJ4005G–KBJ410G
Vishay Lite–On Power Semiconductor
Rev . A2, 24-Jun-982 (4)
Characteristics (Tj = 25
_
C unless otherwise specified)
15635 Tamb – Ambient Temperature ( °C )
I – Average Forward Current ( A )
FAV
0
1
2
3
4
5
6
25 50 75 100 125 150
0
Resistive or inductive load
Figure 1. Max. Average Forward Current vs.
Ambient Temperature
0.01
0.1
1.0
10
0 0.4 0.8 1.2 1.6 1.8
15636
I – Forward Current ( A )
F
VF – Forward Voltage ( V )
IF Pulse Width = 300 µs
Tj = 25°C
Tj = 150°C
Figure 2. Typ. Forward Current vs. Forward Voltage
0
40
80
120
160
180
110 100
Single Half Sine–Wave
(JEDEC Method)
I – Peak Forward Surge Current ( A )
FSM
Number of Cycles at 60 Hz
15637
Tj = 150°C
Figure 3. Max. Peak Forward Surge Current vs.
Number of Cycles
10
100
1000
0.1 1.0 10 100
Tj = 25°C
f = 1 MHz
C – Diode Capacitance ( pF )
D
VR – Reverse Voltage ( V )
15638
Figure 4. Typ. Diode Capacitance vs. Reverse Voltage
0.1
1.0
10
100
1000
0 20 40 60 80 100 120 140
Percent of Rated Peak Reverse Voltage (%)
15639
Tj = 25°C
Tj = 150°C
Tj = 100°C
Tj = 125°C
I – Reverse Current ( A )
R
m
Figure 5. Typ. Reverse Current vs. Percent of
Rated Peak Reverse Voltage
KBJ4005G–KBJ410G
Vishay Lite–On Power Semiconducter
Rev . A2, 24-Jun-98 3 (4)
Dimensions in mm
14472
Case: molded plastic
Polarity: molded on body
Approx. weight: 4.6 grams
Mounting: through hole for #6 screw
Mounting torque: 5.0 in–lbs maximum
Marking: type number
KBJ4005G–KBJ410G
Vishay Lite–On Power Semiconductor
Rev . A2, 24-Jun-984 (4)
Ozone Depleting Substances Policy Statement
It is the policy of V ishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known
as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized
application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out
of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
