LITE-ON SEMICONDUCTOR MBR2530CT thru 2560CT REVERSE VOLTAGE - 30 to 60 Volts FORWARD CURRENT - 30 Amperes SCHOTTKY BARRIER RECTIFIERS TO-220AB FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency High current capability, low VF High surge capacity Plastic package has UL flammability classification 94V-0 For use in low voltage,high frequency inverters,free whelling,and polarity protection applications B L M C DIM. A B C D D A K E PIN 1 2 3 E F F G H G MECHANICAL DATA I Case : TO-220AB molded plastic Polarity : As marked on the body Weight : 0.08 ounces, 2.24 grams Mounting position : any J R N H H PIN 1 PIN 2 CASE PIN 3 IN M I L E R P TO-220AB MAX. MIN. 14.22 15.88 10.67 9.65 3.43 2.54 6.86 5.84 9.28 8.26 A 12.70 6.35 14.73 2.29 0.51 0.30 3.53 3.56 2.79 1.14 0.64 4.09 4.83 Y I J K L M 1.14 1.40 2.92 2.03 N All Dimensions in millimeter MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20% SYMBOL CHARACTERISTICS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current @TC=130 C Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum forward Voltage (per leg) at (Note 1) IF IF IF IF = 15A, = 15A, = 30A, = 30A, Maximum DC Reverse Current at Rated DC Blocking Voltage @TJ=25 C @TJ=125 C @TJ=25 C @TJ=125 C @TJ=25 C @TJ=125 C Voltage rate of change (Rated VR) Typical Junction Capacitance per element (Note 2) Typical Thermal Resistance (Note 3) Operating Temperature Range Storage Temperature Range VRRM VRMS VDC MBR 2530CT 30 21 30 MBR 2535CT 35 24.5 35 MBR 2540CT 40 28 40 MBR 2545CT 45 31.5 45 MBR 2550CT 50 35 50 MBR 2560CT 60 42 60 UNIT V V V I(AV) 30 A IFSM 150 A VF 0.82 0.73 0.65 0.75 - V IR 0.2 40.0 1.0 50.0 mA V/us dv/dt 10,000 CJ 450 pF R0JC 1.5 -55 to +150 -55 to +175 C/W TJ TSTG NOTES : 1. 300us Pulse Width, 2% Duty Cycle. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 3. Thermal Resistance Junction to Case. C C REV. 2-PRE, 13-Sep-2001, KTHC15 RATING AND CHARACTERISTIC CURVES MBR2530CT thru MBR2560CT 30 20 10 RESISTIVE OR INDUCTIVE LOAD 0 50 25 75 100 125 150 FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD CURRENT AMPERES FIG.1 - FORWARD CURRENT DERATING CURVE 40 150 125 100 75 50 25 8.3ms Single Half-Sine-Wave (JEDEC METHOD) 0 175 1 2 5 CASE TEMPERATURE , C FIG.3 - TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT ,(A) 100 TJ = 125 C 10.0 1.0 TJ = 75 C 0.1 MBR2530CT - MBR2545CT MBR2550CT &- MBR2560CT 0.001 20 TJ = 150 C 1.0 40 60 80 100 120 A R 100 0 0.1 0.2 TJ = 25 C PULSE WIDTH 300us 2% Duty cycle 0.01 140 Y MBR2530CT - MBR2545CT MBR2550CT &- MBR2560CT 0.1 PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%) 0.3 0.4 0.5 0.6 0.7 0.8 0.9 INSTANTANEOUS FORWARD VOLTAGE , VOLTS FIG.5 - TYPICAL JUNCTION CAPACITANCE 10000 CAPACITANCE , (pF) 0 10 IN M I L E R P TJ = 25 C 0.01 50 FIG.4 - TYPICAL FORWARD CHARACTERISTICS 100.0 INSTANTANEOUS REVERSE CURRENT ,(mA) 20 10 NUMBER OF CYCLES AT 60Hz 1000 TJ = 25 C, f= 1MHz MBR2530CT - MBR2545CT MBR2550CT - MBR2560CT 100 0.1 1 4 10 100 REVERSE VOLTAGE , VOLTS REV. 2-PRE, 13-Sep-2001, KTHC15