330A
PHASE CONTROL THYRISTORS Stud Version
ST330S SERIES
1
Bulletin I25156 rev. B 01/94
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Features
Center amplifying gate
Hermetic metal case with ceramic insulator
International standard case TO-209AE (TO-118)
Threaded studs UNF 3/4 - 16UNF2A or ISO M24x1.5
Compression Bonded Encapsulation for heavy duty
operations such as severe thermal cycling
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
IT(AV) 330 A
@ TC75 °C
IT(RMS) 520 A
ITSM @ 50Hz 9000 A
@ 60Hz 9420 A
I2t@
50Hz 405 KA2s
@ 60Hz 370 KA2s
VDRM/VRRM 400 to 1600 V
tqtypical 100 µs
TJ- 40 to 125 °C
Parameters ST330S Units
Major Ratings and Characteristics
case style
TO-209AE (TO-118)
ST330S Series
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Bulletin I25156 rev. B 01/94
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage VDRM/VRRM, max. repetitive VRSM , maximum non- IDRM/IRRM max.
Type number Code peak and off-state voltage repetitive peak voltage @ TJ = TJ max
VVmA
04 400 500
08 800 900
ST330S 12 1200 1300 50
14 1400 1500
16 1600 1700
IT(AV) Max. average on-state current 330 A 180° conduction, half sine wave
@ Case temperature 75 °C
IT(RMS) Max. RMS on-state current 520 A DC @ 62°C case temperature
ITSM Max. peak, one-cycle 9000 t = 10ms No voltage
non-repetitive surge current 9420 t = 8.3ms reapplied
7570 t = 10ms 100% VRRM
7920 t = 8.3ms reapplied Sinusoidal half wave,
I2t Maximum I2t for fusing 40 5 t = 10ms No voltage Initial TJ = TJ max.
370 t = 8.3ms reapplied
28 7 t = 10ms 100% VRRM
26 2 t = 8.3ms reapplied
I2√t Maximum I2√t for fusing 4050 KA2√s t = 0.1 to 10ms, no voltage reapplied
VT(TO)1 Low level value of threshold
voltage
VT(TO)2 High level value of threshold
voltage
rt1Low level value of on-state
slope resistance
rt2High level value of on-state
slope resistance
VTM Max. on-state voltage 1.51 V Ipk= 1040A, TJ = TJ max, tp = 10ms sine pulse
IHMaximum holding current 600
ILTypical latching current 1000
0.91 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
0.58 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
0.57 (I > π x IT(AV)),TJ = TJ max.
Parameter ST330S Units Conditions
0.92 (I > π x IT(AV)),TJ = TJ max.
On-state Conduction
KA2s
V
mΩ
mA TJ = 2 5 °C, anode supply 12V resistive load
A
ST330S Series
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Bulletin I25156 rev. B 01/94
Parameter ST330S Units Conditions
Switching
tqTypical turn-off time 100
tdTypical delay time 1.0
di/dt Max. non-repetitive rate of rise Gate drive 20V, 20 Ω, tr ≤ 1µs
of turned-on current TJ = TJ max, anode voltage ≤ 80% VDRM
Gate current A, d ig/dt = 1A/µs
Vd = 0.67% VDRM, TJ = 25°C
ITM = 550A, T J = TJ max, di/dt = 40A/µs, VR = 50V
dv/dt = 20V/µs, Gate 0V 100Ω, tp = 500µs
1000 A/µs
µs
dv/dt Maximum critical rate of rise of
off-state voltage
IRRM Max. peak reverse and off-state
IDRM leakage current
Blocking
500 V/µs TJ = TJ max. linear to 80% rated VDRM
Parameter ST330S Units Conditions
50 mA TJ = TJ max, rated VDRM/VRRM applied
PGM Maximum peak gate power 10.0 TJ = TJ max, tp ≤ 5ms
PG(AV) Maximum average gate power 2.0 TJ = TJ max, f = 50Hz, d% = 50
IGM Max. peak positive gate current 3.0 A TJ = TJ max, tp ≤ 5ms
+VGM Maximum peak positive
gate voltage
-VGM Maximum peak negative
gate voltage
IGT DC gate current required TJ = - 40°C
to trigger m A TJ = 25°C
TJ = 125°C
VGT DC gate voltage required TJ = - 40°C
to trigger V TJ = 25°C
TJ = 125°C
IGD DC gate current not to trigger 10 m A
Parameter ST330S Units Conditions
20
5.0
Triggering
VGD DC gate voltage not to trigger 0.25 V TJ = TJ max
TYP. MAX.
200 -
100 200
50 -
2.5 -
1.8 3.0
1.1 - Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
VDRM anode-to-cathode applied
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
W
VT
J = TJ max, tp ≤ 5ms
ST330S Series
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Bulletin I25156 rev. B 01/94
Ordering Information Table
1- Thyristor
2- Essential part number
3-0 = Converter grade
4-S = Compression bonding Stud
5- Voltage code: Code x 100 = VRRM (See Voltage Rating Table)
6- P = Stud base 16UNF threads
M = Stud base metric threads (M24 x 1.5)
7- 0 = Eyelet terminals (Gate and Auxiliary Cathode Leads)
1 = Fast - on terminals (Gate and Auxiliary Cathode Leads)
3 = Threaded top terminal 3/8" 24UNF-2A
8- Critical dv/dt: None = 500V/µsec (Standard selection)
L = 1000V/µsec (Special selection)
Device Code
5123 4
ST330S16P0
7
68
TJMax. operating temperature range -40 to 125
Tstg Max. storage temperature range -40 to 150
RthJC Max. thermal resistance,
junction to case
RthCS Ma x. thermal resistance,
case to heatsink
T Mounting torque, ± 10% 48.5
(425)
wt Approximate weight 535 g
Case style TO - 209AE (TO-118) See Outline Table
Parameter ST330S Units Conditions
0.10 DC operation
0.03 Mounting surface, smooth, flat and greased
Thermal and Mechanical Specification
°C
K/W
Non lubricated threads
Nm
(lbf-in)
∆RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
180° 0.011 0.008 TJ = TJ max.
120° 0.013 0.014
90° 0.017 0.018 K/W
60° 0.025 0.026
30° 0.041 0.041
Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions
ST330S Series
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Bulletin I25156 rev. B 01/94
Fast-on Terminals
Case Style TO-209AE (TO-118)
All dimensions in millimeters (inches)
Outline Table
Case Style TO-209AE (TO-118)
with top thread terminal 3/8"
All dimensions in millimeters (inches)
RED CATHODE
RED SILICON RUBBER
10.5 (0.41)
245 (9.6 5) ± 10 (0. 39 )
WHITE GATE
4.3 (0.17) DIA.
CERAMIC HOUSING
WHITE SHRINK
NOM.
47 (1.85)
MAX.
245 (9.65)
38 (1.50)
MAX. DIA.
* FOR METRIC DEVICE: M24 X 1.5 - LENGHT SCREW 21 (0.83) MAX.
22 (0.87) MAX.
MAX.
21 (0.82) MAX.
SW 45
2
FLEXIBLE LEAD
4.5 (0.18) MAX.
C.S. 50mm
(0.078 s.i.)
255 (10.04)
RED SHRINK
22 (0.86) MIN.
49 (1.92) MAX.
3/4"16 UNF-2A
27. 5 (1 . 0 8 )
9.5 (0.37) MIN.
47 (1.85)
27.5 (1.08) 77.5 (3.05)
80.5 (3.17)
38 (1.5)
DIA. MAX.
MAX.
MAX.
MAX.
CERAMIC HOUSING
SW 45
* FOR METRIC DEVICE: M24 x 1.5 - LENGHT SCREW 21 (0.83) MAX.
21 (0.83)
3/4"-16UNF-2A *
25 (0.98)
3/8"-24UNF-2A
17 (0.67) DIA.
AMP. 280000-1
REF-250
ST330S Series
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Bulletin I25156 rev. B 01/94
Fig. 3 - On-state Power Loss Characteristics
Fig. 4 - On-state Power Loss Characteristics
25 50 75 100 125
Maxim um Allowable Am bien t T e mper ature (°C)
0.08 K/W
0.2 K/W
0.3 K/W
0.4 K/W
0.6 K/W
1.2 K/W
R = 0.03 K/W - Delta R
thSA
0.12 K/W
0
40
80
120
160
200
240
280
320
360
400
440
480
0 50 100 150 200 250 300 350
180°
120°
90°
60°
30°
RMS Limit
Conducti on Angle
Max imum Average On-state Power Loss (W)
Average On- state Current (A)
ST 33 0 S Se ri e s
T = 12 5°C
J
25 50 75 100 125
Max imum Allo wable Ambien t Tempe r atur e (°C)
R = 0.03 K/W - Delta R
thSA
0.08 K/W
0.12 K/W
0.2 K/W
0.3 K/W
0.4 K/W
0.6 K/W
1.2 K/W
0
50
100
150
200
250
300
350
400
450
500
550
600
650
0 100 200 300 400 500 600
DC
180°
120°
90°
60°
30°
RMS L imit
Cond ucti on Period
Maximum Avera ge On-state Power Loss (W)
Av er ag e On- s ta te Cur re nt (A)
ST330S Se r ies
T = 125°C
J
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
70
80
90
100
110
120
130
0 50 100 150 200 250 300 350
Maximum Allowable Case Temperat ure (°C)
30°60° 90° 120° 180°
A v erage On-s tate Cur rent (A )
Con duction Ang le
ST330S Series
R (DC) = 0.10 K/W
thJC
60
70
80
90
100
110
120
130
0 100 200 300 400 500 600
DC
30°60°90°120° 180°
A verage On-state Curre nt (A)
M a xi mum Allow a b l e Ca s e Temp er atu r e (°C)
Conduction Period
ST330S Series
R (DC) = 0.10 K/W
thJC
ST330S Series
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Bulletin I25156 rev. B 01/94
Fig. 7 - On-state Voltage Drop Characteristics
Fig. 8 - Thermal Impedance ZthJC Characteristic
100
1000
10000
01234567
T = 2 5 °C
J
I nstant aneous On-state Current (A)
Insta n ta n eo us On - s ta te Volta g e (V )
T = 125°C
J
S T330S Se ries
0.001
0.01
0.1
1
0.001 0.01 0.1 1 10
Square Wave Pulse Durat ion (s)
thJC
ST330S Series
Steady State Value
R = 0.10 K/W
(DC Ope rat io n)
thJC
Transient Th ermal Impedance Z (K/W)
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
3500
4000
4500
5000
5500
6000
6500
7000
7500
8000
110100
Number Of Equ al Am pli t ude Half Cycle Current Pulses ( N)
Pe ak Half Sine Wav e On- state Curre nt (A)
I nitia l T = 125 °C
@ 60 Hz 0. 0083 s
@ 50 Hz 0. 0100 s
J
ST 33 0 S Series
At Any Rated Load Condition And With
R ated V A pplied Follo wing Surge.
RRM
3000
4000
5000
6000
7000
8000
9000
0.01 0.1 1
Pulse Tra in Duration (s)
Versus Pul se Train Duration. Con trol
Peak Half Sine Wave On-state Current (A)
I nitial T = 125 °C
No Vol tage Reapplied
Rat ed V Reapplied
RRM
J
ST330S Series
M aximum N on Repetit ive Surge Current
Of Conduction May Not Be Maintained.
ST330S Series
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Bulletin I25156 rev. B 01/94
Fig. 9 - Gate Characteristics
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD IGD
(b)
(a)
Tj=25 °C
Tj=125 °C
Tj=-40 ° C
(2) (3)
Instant a neous Gate Current (A)
Instant aneous Gate Vol tage (V)
Rectangular gate pulse
a) Reco mmended load l ine for
b) R e co mmended load line for
<=30% r ated d i/d t : 10V, 10o h ms
Frequency Limited by PG(AV)
rated di/ dt : 20V, 10ohms; tr<=1 µs
tr<=1 µs
(1)
(1) PGM = 10W, t p = 4ms
(2) PGM = 20W, t p = 2ms
(3) PGM = 40W, t p = 1ms
(4) PGM = 60 W, t p = 0.66ms
D evi ce : ST330S Se r ie s
(4)
