IRFW2Z24/20 N-CHANNEL IRFIZ24/20 POWER MOSFETS FEATURES Lower Rosjon) + Improved Inductive Ruggedness + Fast switching times * Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability PRODUCT SUMMARY Part Number BVpss Rosjon) Ib IRFW2Z24/IZ24 60 0.12 15A IRFW2Z20/1Z20 50 0.10 15A D?-PAK 1. Gate 2. Drain 3. Source IRFWZ24/20 P-PAK 1. Gate 2. Drain 3. Source (RFIZ24/20 ABSOLUTE MAXIMUM RATINGS set IRFW2Z24 IRFWZ20 . Characteristic Symbol IRFIZ24 IRFIZ20 Unit Drain-Source Voltage (1) Vpss 60 50 Vde Drain-Gate Voltage (Ras=1M2 )(1) VoGR 60 50 Vdc Gate-Source Voltage Vas +20 Adc Continuous Drain Current Tc=25 C i) 15 Adc Continuous Drain Current Tc=100 C Ib 10 Adc Drain Current - Pulsed (3) lpm 60 Adc Single Pulsed Avalanche Energy (4) Eas 100 mJ Avalanche Current las 15 A Total Power Dissipation Tc=25 C p 60 Watts D Derate Above 25 C 0.48 w/C Operating and Storage 3 ; Tu, TstG -55 to +175 c Junction Temperature Range Maximum Lead Temp. for Soldering TL 300 C Purposes, 1/8" from case for 5 seconds Notes : (1) Tu=25C to 175C (2) Pulse test : Pulse width <300s, Duty Cycle<2% (3) Repetitive rating : Pulse width limited by junction temperature (4) L= 403H, Vaa=25V, RG=250 , Starting Ti=25C 995 ei ELECTRONICS MS 7964 b4e 0029534 TTl =IRFW2Z24/20 N-CHANNEL IRF1Z24/20 POWER MOSFETS ELECTRICAL CHARACTERISTICS (Tc=25C unless otherwise specified) Symbol Characteristic Min | Typ | Max | Units Test Conditions BVoss | Drain-Source Breakdown Voltage IRFWZ24/1Z24 60 - - V_ | Vas=0V, lp=2502A IRFWZ20/1Z20 50 - - v Vestn) | Gate Threshold Voltage 2.0 - 4.0 V_ | Vos=Ves, Ip=2500A lass | Gate-Source Leakage Forward - - 100 | nA | Ves=20V lass | Gate-Source Leakage Reverse - - | -100] nA | Vas=-20V loss Zero Gate Voltage Drain Current - - 250 | #A | Vos=Max. Rating, Ves=0V - - | 1000) #A | Vos=0,8 Max. Rating, Ves=0V, Tc=150C Rosion) | Static Drain-Source On Resistancet2) - | 0,08] 0.1 Q | Vas=10V, Ip=7.5A gis Forward Transconductance (2) 5.6 | 6.1 - U_ | Ves=50V, lp=7.5A Cies {Input Capacitance - | 635 - pF Coss | Output Capacitance - 218 - pF | Vas=OV, Vos=25V, f=1MHz Crss | Reverse Transfer Capacitance - | 105 - pF tafon) | Turn-On Delay Time - - 30 ns | Voo=0.5 BVoss, Ip=15A, Z0=24.0 tr Rise Time - - 90 ns | (MOSFET switching times are essentially taom | Turn-Off Delay Time - - 40 ns_ | independent of operating temperature) tt Fall Time - - 30 ns Qg Total Gate Charge - - 27 nC | Vas=t0V, lp=15A, Vos=0.8 Max. Rating (Gate-Source Plus Gate-Drain) (Gate charge is essentially independent of Qgs Gate-Source Charge : 7.6 - nC | operating temperature) Qog Gate-Drain ("Miller") Charge - 18 - nc THERMAL RESISTANCE Symbol Characteristics All Units Remark Rihuc Junction-to-Case MAX 25 KAW Rtnga Junction-to-Ambient MAX 62.5 KW | Free Air Operation Notes : (1) Tu=25C to 175C (2) Pulse test : Pulse width < 300s, Duty Cycie<2% . (3) Repetitive rating : Pulse width limited by max. junction temperature a ELECTRONICS 996: ME 7964142 0029535 939IRFW2Z24/20 N-CHANNEL IRF1IZ24/20 POWER MOSFETS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbo! Characteristic Min | Typ | Max | Units Test Conditions Conti s Cc it Is | Ommuous Source warren - | - | 15 | a | Modified MOSFET = {Body Diode) symbol showing the Pulse Source Current integral reverse G s Ism . - - 60 A | P-N junction rectifier (Body Diode) (3) Vsb Diode Forward Voltage (2) - - 1.5 V_ | Tu=25C, Is=15A, Vas=0V ter Reverse Recovery Time - - 310 | ns | Ty=25C, IF=15A, dir/dt=100A/zS Notes : (1) Ti=25C to1 75C (2) Pulse test : Pulse width < 300#s, Duty Cycle<2% (3) Repetitive rating : Pulse width limited by max. Junction temperature ELECTRONICS ME 7964442 OO2953b 875 Me