FEATURES DESCRIPTION APPLICATIONS
• Visible light response
• Sintered construction
• Low cost
SYMBOL PARAMETER MIN MAX UNITS
Vpk Applied Voltage 150 V
Pd Δpo/Δt Continuous Power Dissipation 100 mW/°C
TO Operating and Storage Temperature -30 +75 °C
TS Soldering Temperature* +260 °C
SYMBOL CHARACTERISTIC TEST CONDITIONS MIN TYP MAX UNITS
RD Dark Resistan ce After 10 sec. @ 10 Lux @ 2856 °K 20 MW
RI Illuminated Resistance 10 Lux @ 2856 °K 80 240 KW
S Sensitivity LOG(R100)-LOG(R10)**
LOG(E100)-LOG(E10)*** 0.9 W/Lux
lrange Spectral Application Range Flooded 400 700 nm
lpeak Spectral Application Range Flooded 520 nm
tr Rise Time 10 Lux @ 2856 °K 60 ms
Tf Fall Time After 10 Lux @ 2856 °K 25 ms
CdS Photoconductive Photocells
PD
V
-P8107
PACKAGE DIMENSIONS INCH
[
mm
]
The PDV-P8107 are (CdS), Photoconductive
photocells designed to sen se light from 400 to 700
nm. These light dependent resistors are available in
a wide range of resistance values. They’re packaged
in a two leaded plastic-coated ceramic header.
• Camera exposure
• Shutter controls
• Night light Controls
* 0.200 inch from base for 3 seconds with heat sink.
ELECTR
O
-
OPTICAL CHARACTERISTICS RATING
(TA)
=
2
3
°
C UNLESS OTHERWISE NOTED
**R100, R10: cell resistances at 100 Lux and 10 Lux at 2856 °K respectively .
***E100, E10: luminances at 100 Lux and 10 Lux 2856 °K respectively.
Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are
subject to change without notice.
REV 3/30/06
(TA)
=
2
3
°
C UNLESS OTHERWISE NOTED
PACKAGE DIMENSIONS INCH [mm]
CERAMIC PACKAGE
Ø.200 [5.08]
±.010 [0.25]
.169 [4.29]
±.010 [0.25]
PLASTIC
COATED
2X 1.023 [26.0]
.134 [3.40]
2X Ø.016 [0.40]
EPOXY ON LEADS 3 mm MAX
.079 [2.00]
+.015 [0.38]
-.010 [0.25]
CELL RESISTANCE VS. ILLUMIN
A
NCE
1
10
100
1000
110100
Illuminance in lux
Resistance in Kohms