2N6724 2N6725 w w w. c e n t r a l s e m i . c o m SILICON NPN DARLINGTON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6724 and 2N6725 are silicon NPN Darlington power transistors designed for amplifier applications. MARKING: FULL PART NUMBER TO-237 CASE MAXIMUM RATINGS: (TA=25C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation (TC=25C) Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL SYMBOL ICBO ICBO CHARACTERISTICS: (TA=25C) TEST CONDITIONS VCB=30V VCB=40V IEBO BVCBO BVCES 2N6724 50 2N6725 60 40 VEBO IC 50 12 UNITS V V V 2.0 A IB PD 0.5 A 2.0 W TJ, Tstg JC -65 to +150 C 62.5 C/W 2N6724 MIN MAX 100 - - VEB=10V - IC=1.0A IC=1.0mA 50 BVEBO VCE(SAT) IE=10A IC=1.0A, IB=2.0mA VBE(ON) hFE VCE=5.0V, IC=1.0A VCE=5.0V, IC=200mA hFE fT VCE=5.0V, IC=1.0A VCE=5.0V, IC=200mA, f=100MHz Cob VCB=10V, IE=0, f=1.0MHz 2N6725 MIN MAX - UNITS nA - 100 nA 100 - 100 nA - 60 - V 40 - 50 - V 12 - 12 - V - 1.5 - 1.5 V - 2.0 - 2.0 V 25K - 25K - 4K 40K 4K 40K 100 1K 100 1K MHz - 10 - 10 pF R1 (31-July 2013) 2N6724 2N6725 SILICON NPN DARLINGTON POWER TRANSISTORS TO-237 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R1 (31-July 2013) w w w. c e n t r a l s e m i . c o m 2N6724 2N6725 SILICON NPN DARLINGTON POWER TRANSISTORS TYPICAL ELECTRICAL CHARACTERISTICS R1 (31-July 2013) w w w. c e n t r a l s e m i . c o m