MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL 2N6724 2N6725 UNITS
Collector-Base Voltage VCBO 50 60 V
Collector-Emitter Voltage VCEO 40 50 V
Emitter-Base Voltage VEBO 12 V
Continuous Collector Current IC 2.0 A
Continuous Base Current IB 0.5 A
Power Dissipation (TC=25°C) PD 2.0 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance JC 62.5 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C) 2N6724 2N6725
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
ICBO V
CB=30V - 100 - - nA
ICBO VCB=40V - - - 100 nA
IEBO V
EB=10V - 100 - 100 nA
BVCBO I
C=1.0μA 50 - 60 - V
BVCES I
C=1.0mA 40 - 50 - V
BVEBO I
E=10μA 12 - 12 - V
VCE(SAT) I
C=1.0A, IB=2.0mA - 1.5 - 1.5 V
VBE(ON) V
CE=5.0V, IC=1.0A - 2.0 - 2.0 V
hFE V
CE=5.0V, IC=200mA 25K - 25K -
hFE V
CE=5.0V, IC=1.0A 4K 40K 4K 40K
fT V
CE=5.0V, IC=200mA, f=100MHz 100 1K 100 1K MHz
Cob V
CB=10V, IE=0, f=1.0MHz - 10 - 10 pF
2N6724
2N6725
SILICON
NPN DARLINGTON
POWER TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6724 and
2N6725 are silicon NPN Darlington power transistors
designed for amplifier applications.
MARKING: FULL PART NUMBER
TO-237 CASE
R1 (31-July 2013)
www.centralsemi.com
2N6724
2N6725
SILICON
NPN DARLINGTON
POWER TRANSISTORS
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING: FULL PART NUMBER
TO-237 CASE - MECHANICAL OUTLINE
www.centralsemi.com
R1 (31-July 2013)
2N6724
2N6725
SILICON
NPN DARLINGTON
POWER TRANSISTORS
R1 (31-July 2013)
www.centralsemi.com
TYPICAL ELECTRICAL CHARACTERISTICS