HMC7149 v AMPLIFIERS - LINEAR & POWER - CHIP 10 WATT GaN MMIC POWER AMPLIFIER, 6 - 18 GHz Typical Applications Features The HMC7149 is ideal for: High Psat: +40 dBm * Test Instrumentation Power Gain at Psat: +10 dB * General Communications High Output IP3: +39.5 dBm * Radar Small Signal Gain: 20 dB Supply Voltage: +28 V @ 680 mA 50 Ohm Matched Input/Output Die Size: 3.4 x 4.5 x 0.1 mm Functional Diagram General Description The HMC7149 is an 10W Gallium Nitride (GaN) MMIC Power Amplifier which operates between 6 and 18 GHz. The amplifier typically provides 20dB of small signal gain, +40 dBm of saturated output power, and +39.5 dBm output IP3 at +28 dBm output power per tone. The HMC7149 draws 680 mA current from a +28V DC supply. The RF I/Os are matched to 50 Ohms for ease of integration into Multi-Chip-Modules (MCMs). All electrical performance data was aquired with the die eutectically attached to 1.02 mm (40 mil) thick CuMo carrier with multiple 1.0 mil diameter ball bonds connecting the die to 50 Ohm transmission lines on alumina. Electrical Specifications, Tc = +25C, Vdd= Vdd1 =Vdd2 = +28 V, Idd = 680 mA [1] Parameter Min. Frequency Range Typ. Max. Min. 6 - 10 Small Signal Gain 19 21 Typ. Max. Min. 10 - 14 18 20 Typ. Max. Min. 14 - 16 17 19 18 Typ. Max. Units 16 - 18 GHz 20 dB Gain Flatness 0.5 0.6 0.5 0.7 dB Gain Variation Over Temperature 0.023 0.02 0.02 0.018 dB/ C Input Return Loss 17 17 16 11 dB Output Return Loss 17 17 18 12 dB Output Power for 4 dB Compression (P4dB) 35 35 35 36 dBm Power Gain for 4 dB compression (P4dB) 17 16 15 17 dB 40 40 40 40 dBm Saturated Output Power (Psat) Output Third Order Intercept (IP3) [2] 39.5 39 39.5 40.5 dBm Power Added Efficiency 22 20 20 20 % Supply Current (Idd @ Vdd = 28V) 680 680 680 680 mA [1] Adjust Vgg between -3V and 0V to achieve Idd= 680 mA typical. [2] Measurement taken at 28V @ 680 mA, Pout/tone = +28 dBm. 1 Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and 9106, to place orders: Analog Devices, Inc., For price, isdelivery and to Devices placefororders: Analog Devices,ofInc., Way, P.O. Box Norwood, MA 02062-9106 responsibility assumed by Analog its use, nor for any infringements patents1orTechnology other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No at www.analog.com Phone: 781-329-4700 * Order On-line Phone: 781-329-4700 * Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D HMC7149 v Gain and Return Loss Gain vs. Temperature 30 28 26 20 22 GAIN (dB) Response (dB) 24 10 0 -10 20 18 16 -20 14 -30 12 10 -40 4 6 8 10 12 14 16 18 20 6 8 10 S21 S11 S22 +25C 28 0 26 -5 RETURN LOSS (dB) 24 22 Gain (dB) 14 16 18 +85C -40C Input Return Loss vs. Temperature Gain vs. Vdd 20 18 16 14 -10 -15 -20 -25 -30 -35 12 -40 10 6 8 10 12 14 16 18 6 8 10 24V 12 14 16 18 FREQUENCY (GHz) FREQUENCY (GHz) 28V +25C 32V Output Return Loss vs. Temperature +85C -40C Pout vs. Frequency 45 0 -5 40 -10 -15 Pout (dBm) RETURN LOSS (dB) 12 FREQUENCY (GHz) FREQUENCY (GHz) AMPLIFIERS - LINEAR & POWER - CHIP 10 WATT GaN MMIC POWER AMPLIFIER, 6 - 18 GHz -20 -25 35 30 25 -30 20 -35 -40 15 6 8 10 12 14 16 18 6 8 10 FREQUENCY (GHz) +25C +85C 12 14 16 18 FREQUENCY (GHz) -40C P4dB Psat Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and 9106, to place orders: Analog Devices, Inc., For price, isdelivery and to Devices placefororders: Analog Devices,ofInc., Way, P.O. Box Norwood, MA 02062-9106 responsibility assumed by Analog its use, nor for any infringements patents1orTechnology other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No at www.analog.com Phone: 781-329-4700 * Order On-line Phone: 781-329-4700 * Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D 2 HMC7149 v 10 WATT GaN MMIC POWER AMPLIFIER, 6 - 18 GHz 45 40 40 P4dB (dBm) P4dB (dBm) P4dB vs. Supply Voltage 45 35 30 35 30 25 25 6 8 10 12 14 16 18 6 8 10 FREQUENCY (GHz) +25C +85C 24V -40C 45 45 Psat (dBm) 50 40 35 16 18 28V 32V 40 35 30 30 6 8 10 12 14 16 18 6 8 10 FREQUENCY (GHz) 12 14 16 18 FREQUENCY (GHz) +85C -40C 24V P4dB vs. Supply Current 28V 32V Psat vs. Supply Curent 50 45 45 Psat (dBm) 40 P4dB (dBm) 14 Psat vs. Supply Voltage 50 +25C 35 40 35 30 30 25 6 8 10 12 14 16 18 6 8 340 mA 680 mA 1360 mA 10 12 14 16 18 FREQUENCY (GHz) FREQUENCY (GHz) 3 12 FREQUENCY (GHz) Psat vs. Temperature Psat (dBm) AMPLIFIERS - LINEAR & POWER - CHIP P4dB vs. Temperature 340 mA 680 mA 1360 mA Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and 9106, to place orders: Analog Devices, Inc., For price, isdelivery and to Devices placefororders: Analog Devices,ofInc., Way, P.O. Box Norwood, MA 02062-9106 responsibility assumed by Analog its use, nor for any infringements patents1orTechnology other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No at www.analog.com Phone: 781-329-4700 * Order On-line Phone: 781-329-4700 * Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D HMC7149 v 10 WATT GaN MMIC POWER AMPLIFIER, 6 - 18 GHz 43 30 41 20 IP3 (dBm) POWER GAIN (dB) 25 15 39 37 10 35 5 33 0 6 8 10 12 14 16 6 18 8 10 P4dBm 12 14 16 18 FREQUENCY (GHz) FREQUENCY (GHz) Psat +25 C +85 C -40 C Output IP3 vs. Supply Current Pout/tone = +28 dBm Output IP3 vs. Supply Voltage Pout/tone = +28 dBm 48 43 46 44 IP3 (dBm) IP3 (dBm) 41 39 37 42 40 38 36 35 34 32 33 6 8 10 12 14 16 6 18 8 10 24V 28V 340 mA 32V Output IM3 @ Vdd= +24V 14 16 18 680 mA 1360 mA Output IM3 @ Vdd= +28V 50 50 40 40 IM3 (dBc) IM3 (dBc) 12 FREQUENCY (GHz) FREQUENCY (GHz) AMPLIFIERS - LINEAR & POWER - CHIP Output IP3 vs. Temperature Pout/tone = +28 dBm Power Gain vs. Frequency 30 20 30 20 10 10 20 22 24 26 28 30 32 20 22 24 Pout/tone(dBm) 6 GHz 8 GHz 10 GHz 12 GHz 14 GHz 16 GHz 26 28 30 32 Pout/TONE (dBm) 18 GHz 6 GHz 8 GHz 10 GHz 12 GHz 14 GHz 16 GHz 18 GHz Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and 9106, to place orders: Analog Devices, Inc., For price, isdelivery and to Devices placefororders: Analog Devices,ofInc., Way, P.O. Box Norwood, MA 02062-9106 responsibility assumed by Analog its use, nor for any infringements patents1orTechnology other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No at www.analog.com Phone: 781-329-4700 * Order On-line Phone: 781-329-4700 * Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D 4 HMC7149 v Power Compression @ 6 GHz Output IM3 @ Vdd= +32V IM3 (dBc) 40 30 20 50 2250 45 2025 40 1800 35 1575 30 1350 25 1125 20 900 15 675 10 450 5 225 0 0 10 20 22 24 26 28 30 32 0 2 4 6 8 12 GHz 14 GHz 16 GHz Pout 18 GHz Gain Power Compression @ 18 GHz 50 2250 45 2025 45 2025 40 1800 40 1800 35 1575 35 1575 30 1350 30 1350 25 1125 25 1125 20 900 20 900 15 675 15 675 10 450 10 450 5 225 5 225 0 0 0 2 4 6 Pout(dBm), GAIN(dB), PAE(%) 2250 0 0 8 10 12 14 16 18 20 22 24 26 28 30 0 2 4 6 8 INPUT POWER (dBm) 10 12 14 16 18 20 22 24 26 28 INPUT POWER (dBm) Gain PAE Pout Gain Idd PAE Idd Gain and Power vs. Supply Voltage @ 12 GHz Gain and Power vs. Supply Curent @ 12 GHz 45 P1dB (dBm), Psat (dBm), GAIN(dB) 45 P4dB (dBm), Psat (dBm), Gain(dB) Idd (mA) 50 Pout 40 35 30 25 20 40 35 30 25 20 15 15 24 26 28 30 32 340 510 P4dB(dBm) Psat(dBm) Gain(dB) 680 850 1020 1190 1360 Idd (mA) Vdd (V) 5 PAE Idd Power Compression @ 12 GHz Pout(dBm), GAIN(dB), PAE(%) 10 12 14 16 18 20 22 24 26 28 INPUT POWER (dBm) Pout/TONE (dBm) 6 GHz 8 GHz 10 GHz Idd (mA) Pout(dBm), GAIN(dB), PAE(%) 50 Idd (mA) AMPLIFIERS - LINEAR & POWER - CHIP 10 WATT GaN MMIC POWER AMPLIFIER, 6 - 18 GHz P4dB(dBm) Psat(dBm) Gain(dB) Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and 9106, to place orders: Analog Devices, Inc., For price, isdelivery and to Devices placefororders: Analog Devices,ofInc., Way, P.O. Box Norwood, MA 02062-9106 responsibility assumed by Analog its use, nor for any infringements patents1orTechnology other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No at www.analog.com Phone: 781-329-4700 * Order On-line Phone: 781-329-4700 * Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D HMC7149 v 10 WATT GaN MMIC POWER AMPLIFIER, 6 - 18 GHz Second Harmomonics vs. Supply Voltage 70 0 SECOND HARMONIC (dBc) -10 ISOLATION (dB) -20 -30 -40 -50 -60 -70 -80 60 50 40 30 20 10 -90 0 6 8 10 12 14 16 6 18 8 10 FREQUENCY (GHz) +25 C +85 C 24V -40 C 14 16 18 28V 32V Second Harmomonics vs. Pout Second Harmomonics vs. Supply Current 70 70 60 60 SECOND HARMONIC (dBc) SECOND HARMONIC (dBc) 12 FREQUENCY(GHz) 50 40 30 20 10 50 40 30 20 10 0 0 6 8 10 12 14 16 18 6 8 10 FREQUENCY(GHz) 340 mA 12 14 16 18 FREQUENCY(GHz) 680 mA 1360 mA 24 dBm 26 dBm 28 dBm 30 dBm AMPLIFIERS - LINEAR & POWER - CHIP Reverse Isolation vs. Temperature 32 dBm Power Dissipation POWER DISSIPATION (W) 45 40 35 30 25 20 15 10 0 3 6 9 12 15 18 21 24 27 30 INPUT POWER (dBm) 6 GHz 8 GHz 10 GHz 12 GHz 14 GHz 16 GHz 18 GHz Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and 9106, to place orders: Analog Devices, Inc., For price, isdelivery and to Devices placefororders: Analog Devices,ofInc., Way, P.O. Box Norwood, MA 02062-9106 responsibility assumed by Analog its use, nor for any infringements patents1orTechnology other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No at www.analog.com Phone: 781-329-4700 * Order On-line Phone: 781-329-4700 * Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D 6 HMC7149 v 10 WATT GaN MMIC POWER AMPLIFIER, 6 - 18 GHz AMPLIFIERS - LINEAR & POWER - CHIP Absolute Maximum Ratings[1] Typical Supply Current vs. Vdd Drain Bias Voltage (Vdd) +32V Gate Bias Voltage (Vgg) -8V to +0V Maximum Forward Gate Current 6 mA Maximum RF Input Power (RFIN) 30 dBm Maximum Junction Temperature (Tj) 225 C Maximum Pdiss (T=85C) (Derate 357 mW/C above 85C) 50 W Thermal Resistance [2] 2.8 C/W Maximum VSWR [3] 6:1 Storage Temperature -55 to +150 C Operating Temperature -40 to +85 C Idd (mA) +28.0 680 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS [1] Operation outside parameter ranges above can cause permanent damage to the device. These are maximum stress ratings only. Continuous operation of the device at these conditions is not implied. [2] Assumes 1mil AuSn die attach to a 40mil CuMo Carrier with 85C at the back of the carrier. [3] Restricted by maximum power dissipation Outline Drawing Die Packaging Information [1] Standard Alternate GP-1 (Gel Pack) [2] [1] Refer to the "Packaging Information" section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 7 Vdd (V) NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004" 3. TYPICAL BOND PAD IS .004" SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 8. OVERALL DIE SIZE .002 Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and 9106, to place orders: Analog Devices, Inc., For price, isdelivery and to Devices placefororders: Analog Devices,ofInc., Way, P.O. Box Norwood, MA 02062-9106 responsibility assumed by Analog its use, nor for any infringements patents1orTechnology other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No at www.analog.com Phone: 781-329-4700 * Order On-line Phone: 781-329-4700 * Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D HMC7149 v 10 WATT GaN MMIC POWER AMPLIFIER, 6 - 18 GHz Pad Number Function Description 1 RFIN This pad is AC coupled and is matched to 50 Ohms. External blocking capacitor is required. 2 Vdd1 Drain Bias 3 RFOUT This pad is DC coupled and is matched to 50 Ohms. External blocking capacitor is required. 4 Vgg2 Gate Bias 5 Vdd2 Drain Bias 6 Vgg1 Gate Bias Die Bottom GND Die bottom must be connected to RF/DC ground. Interface Schematic Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and 9106, to place orders: Analog Devices, Inc., For price, isdelivery and to Devices placefororders: Analog Devices,ofInc., Way, P.O. Box Norwood, MA 02062-9106 responsibility assumed by Analog its use, nor for any infringements patents1orTechnology other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No at www.analog.com Phone: 781-329-4700 * Order On-line Phone: 781-329-4700 * Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D AMPLIFIERS - LINEAR & POWER - CHIP Pad Descriptions 8 HMC7149 v 10 WATT GaN MMIC POWER AMPLIFIER, 6 - 18 GHz AMPLIFIERS - LINEAR & POWER - CHIP Application Circuit 9 Assembly Diagram Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and 9106, to place orders: Analog Devices, Inc., For price, isdelivery and to Devices placefororders: Analog Devices,ofInc., Way, P.O. Box Norwood, MA 02062-9106 responsibility assumed by Analog its use, nor for any infringements patents1orTechnology other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No at www.analog.com Phone: 781-329-4700 * Order On-line Phone: 781-329-4700 * Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D HMC7149 v 10 WATT GaN MMIC POWER AMPLIFIER, 6 - 18 GHz The die should be eutectically attached directly to the ground plane (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a copper tungsten or CuMo heat spreader which is then attached to the thermally conductive ground plane (Figure 2). 0.102mm (0.004") Thick GaN MMIC Wire Bond 0.076mm (0.003") RF Ground Plane 0.127mm (0.005") Thick Alumina Thin Film Substrate Microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. Figure 1. 0.102mm (0.004") Thick GaAs MMIC Wire Bond 0.076mm (0.003") RF Ground Plane 0.150mm (0.005") Thick Moly Tab 0.254mm (0.010") Thick Alumina Thin Film Substrate Figure 2. Die placement: A heated vacuum collet (180C) is the preferred method of pick up. Ensure that the area of vacuum contact on the die is minimized to prevent cracking under differential pressure. All air bridges (if applicable) must be avoided during placement. Minimize impact forces applied to the die during auto-placement. AMPLIFIERS - LINEAR & POWER - CHIP Mounting & Bonding Techniques for GaN MMICs Mounting The chip is back-metallized with a minimum of 5 microns of gold and is the RF ground and thermal interface. It is recommended that the chip be die mounted with AuSn eutectic preforms. The mounting surface should be clean and flat. Eutectic Reflow Process: An 80/20 gold tin 0.5mil (13um) thick preform is recommended with a work surface temperature of 280C. Limit exposure to temperatures above 300C to 30 seconds maximum. A die bonder or furnace with 95% N2 / 5% H2 reducing atmosphere should be used. No organic flux should be used. Coefficient of thermal expansion matching is critical for long term reliability. Die Attach Inspection: X-ray or acoustic scan is recommended. Wire Bonding Thermosonic ball or wedge bonding is the preferred interconnect technique. Gold wire must be used in a diameter appropriate for the pad size and number of bonds applied. Force, time and ultrasonics are critical parameters: optimize for a repeatable, high bond pull strength. Limit the die bond pad surface temperature to 200C maximum. Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and 9106, to place orders: Analog Devices, Inc., For price, isdelivery and to Devices placefororders: Analog Devices,ofInc., Way, P.O. Box Norwood, MA 02062-9106 responsibility assumed by Analog its use, nor for any infringements patents1orTechnology other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No at www.analog.com Phone: 781-329-4700 * Order On-line Phone: 781-329-4700 * Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D 10