2SK3491 Ordering number : EN6959A SANYO Semiconductors DATA SHEET 2SK3491 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features * * Low ON-resistance. Low Qg. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Symbol Conditions Ratings VDSS VGSS Drain Current (Pulse) ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature PW10s, duty cycle1% Tc=25C Unit 600 V 30 V 1.0 A 4.0 A 1.0 W 20 W Tch 150 C Tstg --55 to +150 C Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Symbol Ratings Conditions min typ Unit max V(BR)DSS IDSS ID=1mA, VGS=0V IGSS VGS(off) VGS=30V, VDS=0V VDS=10V, ID=1mA 2.5 VDS=10V, ID=0.5A 430 Static Drain-to-Source On-State Resistance yfs RDS(on) Input Capacitance Ciss VGS=10V, ID=0.5A VDS=20V, f=1MHz 135 pF Output Capacitance Coss VDS=20V, f=1MHz 40 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 20 pF Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance 600 V VDS=600V, VGS=0V A 100 nA 3.5 850 8.5 Marking : K3491 100 V mS 11 Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 30409PB MS IM / 52101 TS IM TA-3255 No.6959-1/4 2SK3491 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Total Gate Charge Qg td(on) VDS=200V, VGS=10V, ID=1.0A See specified Test Circuit. 6 Turn-ON Delay Time 8 ns Rise Time tr See specified Test Circuit. 7 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 17 ns Fall Time tf See specified Test Circuit. 30 Diode Forward Voltage VSD IS=1.0A, VGS=0V 0.83 Package Dimensions Package Dimensions unit : mm (typ) 7518-004 unit : mm (typ) 7003-004 1 2 1 1 : Gate 2 : Drain 3 : Source 4 : Drain 3 2.3 2.3 2 3 0 to 0.2 0.6 0.5 SANYO : TP 0.5 1.2 5.5 0.8 1.2 7.5 0.8 1.6 0.6 2.5 0.85 0.85 0.7 0.5 1.5 1.5 4 7.0 5.5 4 V 2.3 6.5 5.0 0.5 ns 1.2 7.0 2.3 6.5 5.0 nC 1.2 2.3 2.3 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA Switching Time Test Circuit VDD=200V 10V 0V VIN ID=0.5A RL=400 VOUT D PW=1s D.C.0.5% VIN G P.G RGS 50 2SK3491 S No.6959-2/4 2SK3491 ID -- VDS 2.0 1.8 0V 10. 6.0V V 1.2 5.5V 1.0 0.8 5.0V 0.6 0.4 25C 1.0 75C 0.8 0.6 0.4 VGS=4.5V 0.2 0.2 0 0 0 5 10 15 0 20 Drain-to-Source Voltage, VDS -- V 20 Tc=25C 0.5A Static Drain-to-Source On-State Resistance, RDS(on) -- 0.1A 20 15 5 ID=1.0A 10 5 10 15 20 Gate-to-Source Voltage, VGS -- V IT02865 RDS(on) -- VGS 25 Static Drain-to-Source On-State Resistance, RDS(on) -- Tc= --25C 1.2 Drain Current, ID -- A Drain Current, ID -- A 0 20. VDS=10V 1.4 1.6 1.4 ID -- VGS 1.6 18 IT02866 RDS(on) -- Tc ID=0.5A VGS=10V 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 Gate-to-Source Voltage, VGS -- V 3 2 1 50 100 Switching Time, SW Time -- ns Tc=7 5C 25C --25C 0.001 0 0.2 0.4 0.6 0.8 1.0 Diode Forward Voltage, VSD -- V 1.2 1.4 IT02871 125 150 IT02868 VDS=10V C --25 Tc= 1.0 7 5 C 75 C 25 3 2 0.1 2 3 5 7 1.0 2 3 IT02870 SW Time -- ID 1000 7 5 VGS=0V 0.01 7 5 3 2 100 Drain Current, ID -- A IS -- VSD 0.1 7 5 3 2 75 yfs -- ID IT02869 1.0 7 5 3 2 50 2 7 0.1 150 Case Temperature, Tc -- C 10 7 5 3 2 25 Case Temperature, Tc -- C Forward Transfer Admittance, yfs -- S Cutoff Voltage, VGS(off) -- V 4 0 0 3 VDS=10V ID=1mA 0 --50 --25 IT02867 VGS(off) -- Tc 5 Source Current, IS -- A 0 --50 20 VDD=200V VGS=10V 3 2 100 7 5 tf td (off) 3 2 td(on) 10 7 5 tr 3 2 1.0 0.1 2 3 5 7 1.0 Drain Current, ID -- A 2 3 IT02872 No.6959-3/4 2SK3491 Ciss, Coss, Crss -- VDS 1000 7 5 3 2 Ciss 100 7 5 Drain Current, ID -- A Ciss, Coss, Crss -- pF ASO 10 7 5 f=1MHz Coss Crss 3 2 10 7 5 3 2 3 2 ID=1A 1.0 7 5 DC 3 2 0 5 10 15 20 25 Drain-to-Source Voltage, VSD -- V 30 tio n Operation in this area is limited by RDS(on). Tc=25C Single pulse 2 3 5 7 10 Allowable Power Dissipation, PD -- W 1.0 0.8 0.6 0.4 0.2 0 3 5 7 100 2 3 5 7 1000 IT02874 PD -- Tc 30 1.2 2 Drain-to-Source Voltage, VDS -- V IT02873 PD -- Ta 1.4 op era 0.1 7 5 0.01 1.0 35 10 <10s 10 0 s 1m s m 0m s s 10 3 2 1.0 Allowable Power Dissipation, PD -- W IDP=4A 25 20 15 10 5 0 0 20 40 60 80 100 120 Amibient Temperature, Ta -- C 140 160 IT02876 0 20 40 60 80 100 120 140 Case Temperature, Tc -- C 160 IT02875 Note on usage : Since the 2SK3491 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of March, 2009. Specifications and information herein are subject to change without notice. PS No.6959-4/4