TLP161JTPRUCF - TOSHIBA - Datasheet.Live

TLP161J

2007-10-01

TOSHIBA Photocoupler GaAs IRED & Photo-Triac

TLP161J

Triac Drive

Programmable Controllers

AC-Output Module

Solid State Relay

The TOSHIBA mini flat coupler TLP161J is a small outline coupler,

suitable for surface mount assembly.

The TLP161J consists of a photo triac, optically coupled to a gallium

arsenide infrared emitting diode.

• Zero-voltage crossing turn-on

• Peak off-state voltage: 600 V (min)

• Trigger LED current: 10 mA (max)

• On-state current: 70 mA (max)

• Isolation voltage: 2500 Vrms (min)

• UL recognized: UL1577, file No. E67349

Pin Configurations

Trigger LED Current

Trigger LED Current (mA)

VT = 6 V, Ta = 25°C

Classification (*)

Min Max

Marking of

Classification

(IFT7) ⎯ 7 T7

Standard ⎯ 10 T7, Blank

*: Ex. (IFT7): TLP161J (IFT7)

Note: Application type name for certification test, please use standard product type name, i.e.

TLP161J (IFT7): TLP161J

Unit: mm

JEDEC ⎯

JEITA ⎯

TOSHIBA 11-4C3

Weight: 0.09 g (typ.)

1: Anode

3: Cathode

4: Terminal 1

6: Terminal 2

TLP161J

2007-10-01

Absolute Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Forward current IF 50 mA

Forward current derating

(Ta ≥ 53°C) ΔIF/°C −0.7 mA/°C

Peak forward current

(100 μs pulse, 100 pps) IFP 1 A

Reverse voltage VR 5 V

LED

Junction temperature Tj 125 °C

Off-state output terminal voltage VDRM 600 V

Ta = 25°C 70

On-state RMS

current Ta = 70°C

IT(RMS)

On-state current derating

(Ta ≥ 25°C) ΔIT/°C −0.67 mA/°C

Peak on-state current

(100 μs pulse, 120 pps) ITP 2 A

Peak nonrepetitive surge current

(PW = 10 ms, DC = 10%) ITSM 1.2 A

Detector

Junction temperature Tj 115 °C

Storage temperature range Tstg −55 to 125 °C

Operating temperature range Topr −40 to 100 °C

Lead soldering temperature (10 s) Tsol 260 °C

Isolation voltage (AC, 1 min., R.H. ≤ 60%)

(Note)

BVS 2500 Vrms

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if

the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note: Device considered a two terminal device: Pins 1 and 3 shorted together and pins 4 and 6 shorted together.

Recommended Operating Conditions

Characteristics Symbol Min Typ. Max Unit

Supply voltage VAC ⎯ ⎯ 240 Vac

Forward current IF 15 20 25 mA

Peak on-state current ITP ⎯ ⎯ 1 A

Operating temperature Topr −25

⎯ 85 °C

Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the

device. Additionally, each item is an independent guideline respectively. In developing designs using this

product, please confirm specified characteristics shown in this document.

TLP161J

2007-10-01

Individual Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Forward voltage VF I

F = 10 mA 1.0 1.15 1.3 V

Reverse current IR V

R = 5 V ⎯ ⎯ 10 μA

LED

Capacitance CT V = 0, f = 1 MHz ⎯ 30 ⎯ pF

Peak off-state current IDRM V

DRM = 600 V ⎯ 10 1000 nA

Peak on-state voltage VTM I

TM = 70 mA ⎯ 1.7 2.8 V

Holding current IH ⎯ ⎯ 0.6 ⎯ mA

Critical rate of rise of

off-state voltage dv/dt Vin = 240 Vrms, Ta = 85°C (Figure 1) 200 500 ⎯ V/μs

Detector

Critical rate of rise of

commutating voltage dv/dt(c) Vin = 60 Vrms, IT = 15 mA (Figure 1) ⎯ 0.2 ⎯ V/μs

Coupled Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Trigger LED current IFT V

T = 6 V ⎯ 5 10 mA

Inhibit voltage VIH I

F = Rated IFT ⎯ ⎯ 50 V

Leakage in inhibited state IIH I

F = Rated IFT, VT = Rated VDRM ⎯ 200 600 μA

Capacitance (input to output) CS V

S = 0, f = 1 MHz ⎯ 0.8 ⎯ pF

Isolation resistance RS V

S = 500 V, R.H. ≤ 60% 1 ×

1012 1014 ⎯ Ω

AC, 1 minute 2500 ⎯ ⎯

AC, 1 s, in oil ⎯ 5000 ⎯

Vrms

Isolation voltage BVS

DC, 1 minute, in oil ⎯ 5000 ⎯ Vdc

Figure 1 dv/dt Test Circuit

4 3

Rin

−

4 kΩ

120 Ω

Vin

VCC

5 V, VCC

0 V

dv/dt(c) dv/dt

TLP161J

2007-10-01

TLP161J

2007-10-01

TLP161J

2007-10-01

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specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA

Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are

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