2N6341X
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be
both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab
encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
DOC 7205, ISSUE 1
DESCRIPTION
The 2N6341X is a high power silicon NPN
transistor in JEDEC TO-204AA metal case.
Intended for use in power amplifiers and
switching circuits for Military and Aerospace
applications and is available processed in
accordance with the requirements of BS, CECC
and JAN, JANTX, JANTXV and JANS
specifications.
High-Power NPN
Silicon Transistor
TO3 (TO204AA)
Pin 1 – Base Pin 2 – Emitter Case – Collector
12
3
(case)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
38.61 (1.52)
39.12 (1.54)
29.9 (1.177)
30.4 (1.197)
16.64 (0.655)
17.15 (0.675)
3.84 (0.151)
4.09 (0.161)
0.97 (0.060)
1.10 (0.043)
7.92 (0.312)
12.70 (0.50)
22.23
(0.875)
max.
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
3.43 (0.135)
MECHANICAL DATA
Dimensions in mm (inches)
ABSOLUTE MAXIMUM RATINGS
TCASE = 25°C unless otherwise stated
VCEO Collector - Emitter Voltage (IB = 0) 135V
VCBO Collector - Base Voltage 180V
VEBO Emitter – Base Voltage (IC = 0) 6.0V
IC Continuous Collector Current 25A
IB Base Current 10A
Ptot Total Power Dissipation at Tamb ≤ 25°C 200W
T
case +100°C 112W
Tj,Tstg Operating and Storage Junction Temperature Range -65 to +200°C
2N6341X
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be
both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab
encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
DOC 7205, ISSUE 1
THERMAL DATA
RθJC Thermal Resistance Junction - Case Max 1.5 °C/W
ELECTRICAL CHARACTERISTICS (Tcase=25°C unless otherwise stated)
Parameter Test Conditions Min. Typ. Max. Unit
ICBO Collector Cut-Off Current IE = 0 VCB = 180V 10
VBE = 1.5V VCE = 135V 10 µA
ICEX Collector Cut-Off Current T
C = 150°C 1.0 mA
ICEO Collector Cut-Off Current IB = 0 VCE = 75V 50
IEBO Emitter Cut-Off Current IC = 0 VEB = 6.0V 100 µA
VCEO(BR)* Collector Emitter Breakdown
Voltage IB = 0 IC = 50mA 135
IC = 10A IB = 1.0A 1.0
VCE(sat)* Collector Emitter Saturation Voltage IC = 25A IB = 2.5A 1.8
VBE(sat)* Base Emitter Saturation Voltage IC = 10A IB = 1.0A 1.8
V
IC = 0.5A VCE = 2.0V 40
IC = 10A VCE = 2.0V 30 120
T
C = -55°C 10
hFE* DC Current Gain
IC = 25A VCE = 2.0V 12
IC = 1.0A VCE = 10V
|hFE|
Magnitude of common emitter, small
signal, short circuit, forward current
transfer ratio f = 10MHz 2
IE = 0 VCB = 10V
COBO Collector Base Capacitance f = 1.0MHz 450 pF
ton Turn-on time VCC = 80V IC = 10A 0.5
toff Turn-off time 1.25
ts Storage time IB1 = 1.0A IB2 = 1.0A 1.0
µs
* Pulse test tp = 300µs, δ < 2%
