2N6341X MECHANICAL DATA Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44) 1 High-Power NPN Silicon Transistor 6.35 (0.25) 9.15 (0.36) 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) TO3 (TO204AA) Pin 1 - Base DESCRIPTION Pin 2 - Emitter Case - Collector The 2N6341X is a high power silicon NPN transistor in JEDEC TO-204AA metal case. Intended for use in power amplifiers and switching circuits for Military and Aerospace applications and is available processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications. ABSOLUTE MAXIMUM RATINGS TCASE = 25C unless otherwise stated VCEO VCBO VEBO IC IB Ptot Tj,Tstg Collector - Emitter Voltage (IB = 0) Collector - Base Voltage Emitter - Base Voltage (IC = 0) Continuous Collector Current Base Current Total Power Dissipation at Tamb 25C Tcase +100C Operating and Storage Junction Temperature Range 135V 180V 6.0V 25A 10A 200W 112W -65 to +200C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk DOC 7205, ISSUE 1 2N6341X THERMAL DATA RJC Thermal Resistance Junction - Case Max ELECTRICAL CHARACTERISTICS (T case ICBO 1.5 C/W Min. Typ. Max. Unit =25C unless otherwise stated) Parameter Test Conditions Collector Cut-Off Current IE = 0 VCB = 180V 10 VBE = 1.5V VCE = 135V 10 TC = 150C 1.0 ICEX Collector Cut-Off Current ICEO Collector Cut-Off Current IB = 0 VCE = 75V 50 IEBO IC = 0 VEB = 6.0V 100 VCEO(BR)* Emitter Cut-Off Current Collector Emitter Breakdown Voltage IB = 0 IC = 50mA VCE(sat)* Collector Emitter Saturation Voltage IC = 10A IB = 1.0A 1.0 IC = 25A IB = 2.5A 1.8 VBE(sat)* Base Emitter Saturation Voltage IC = 10A IB = 1.0A 1.8 IC = 0.5A VCE = 2.0V 40 IC = 10A VCE = 2.0V 30 TC = -55C 10 IC = 25A VCE = 2.0V 12 IC = 1.0A VCE = 10V hFE* DC Current Gain |hFE| Magnitude of common emitter, small signal, short circuit, forward current transfer ratio COBO Collector Base Capacitance ton Turn-on time toff Turn-off time ts Storage time f = 10MHz IE = 0 VCB = 10V f = 1.0MHz VCC = 80V IC = 10A IB1 = 1.0A IB2 = 1.0A A mA A 135 V 120 2 450 pF 0.5 1.25 s 1.0 * Pulse test tp = 300s, < 2% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk DOC 7205, ISSUE 1