25C D MM 8235605 0004899 1 MMSIEG _ PNP Silicon Planar Transistors . 2N 2906 _ 2 SIEMENS AKTIENGESELLSCHAF 27-372 47 2 N 2907 2 N 2906 and 2 N 2907 are epitaxial PNP silicon planar transistors in TO 18 case (18 A 3 DIN 41876). The collector is electrically connected to the case. The transistors are particularly suitable for use as high-speed switches. & Type | Ordering code 8 2N 2906 062702-F137 SE iB 2N 2907 Q62702-S111 . * - 254208 Approx. weight 0.3 g Dimensions in mm 2N 2906 Maximum ratings 2N 2907 Collector-emitter voltage -Vceo 40 Vv Collector-base voltage -Vcso 60 Vv Emitter-base voltage Veso 5 Vv Collector current Ic 0.6 A Junction temperature Tj 200 c Storage temperature range Tstg -65 to +200 c Total power dissipation (Tamp = 25 C) Prot 0.4 Ww Total power dissipation (Tcase = 25 C) Prot 1.8 WwW Thermal resistance Junction to ambient air Riga <438 K/W Junction to case Rinuc <97 K/W 2261 A~02 945esc D m= 4235605 o004700 4 MESTIEG SIENENS AKTIENGESELLSCHAF -T37~/7 2N 2906 2N 2907 Static characteristics (Tamp = 25 C) 2N 2906 2N 2907 Collector-base breakdown voltage (-Ic =10 pA) Visricso >60 > 60 Vv Collector-emitter breakdown voltage (-Ic = 10 mA) Vier)ceo >40 >40 Vv Emitter-base breakdown voltage (-Ig =5V) Vereso | >5 >5 Vv Collector-emiitter saturation voltage (-Jg = 15 mA; Ig = 150 mA} Veesat <0.4 <0.4 Vv (-Jg = 50 mA; -Io = 500 mA) Vesat <1.6 < 1.6 Vv Base-emitter saturation voltage (-Je = 150 mA; Ig = 15 mA) Veesat < 1.3 <1.3 Vv (-I = 500 mA; Jg = 50 mA) ~Voesat <2.6 <2.6 Vv Collector cutoff current (-Veg = 50 V) -Icgo <20 <20 nA (-Veg = 50 V; Tamb = 150C) Icpo <20 <20 pA DC current gain (-Veg = 10 V; Jo = 100 pA) hee >20 >35 - (-Vce = 10 V; -ig = 1 MA) Ogg >25 > 50 - (-Vee = 10 V; Ic = 10 mA) hice >35 >75 - (-Voe = 10 V; ~Jce = 150 mA) hice 40to120 | 100to 300 | - (-Vce = 10 V; Jc = 500 mA) hee >20 >30 - Dynamic characteristics (Tamp = 25 C) Collector base capacitance (-Veg = 10 V: f = 100 kHz) Ccso <8 <8 pF Transition frequency (Vce = 20 V; -ig =50mA;f=100MHz) if > 200 > 200 MHz Switching times: (-Vec = 30 V; -Ig = 150 mA; Jg1 approx. Jg2 approx. 15 mA) Delay time ty <10 <10 ns Rise time t <40 <40 ns Storage time t, <80 <80 ns Fall time t <30 <30 ns 946 2262 A~-03