© 2003 IXYS CORPORATION, All Rights Reserved DS98856A(01/03)
HiPerRFTM
Power MOSFETs
F-Class: MegaHertz Switching
Features
zRF capable MOSFETs
zDouble metal process for low gate
resistance
zRugged polysilicon gate cell structure
zUnclamped Inductive Switching (UIS)
rated
zLow package inductance
- easy to drive and to protect
zFast intrinsic rectifier
Applications
zDC-DC converters
zSwitched-mode and resonant-mode
power supplies, >500kHz switching
zDC choppers
z13.5 MHz industrial applications
zPulse generation
zLaser drivers
z RF amplifiers
Advantages
zSpace savings
zHigh power density
VDSS = 1000V
ID25 = 12A
RDS(on) ≤≤
≤≤
≤ 1.05ΩΩ
ΩΩ
Ω
trr ≤ ≤
≤ ≤
≤ 250ns
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, Low
Intrinsic Rg, High dV/dt, Low trr
IXFH12N100F
IXFT12N100F
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 1000 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ1000 V
VGSS Continuous ± 20 V
VGSM Transient ± 30 V
ID25 TC= 25°C12A
IDM TC= 25°C, pulse width limited by TJM 48 A
IAR TC= 25°C12A
EAS TC= 25°C 1 J
dV/dt IS≤ IDM, di/dt < 100A/μs, VDD ≤ VDSS 20 V/ns
TJ ≤ 150°C, RG = 2Ω
PDTC= 25°C 300 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TLMaximum lead temperature for soldering 300 °C
TSOLD Plastic body for 10s 260 °C
MdMounting torque (TO-247) 1.13/10 Nm/lb.in.
Weight TO-247 6 g
TO-268 4 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 1mA 1000 V
VGS(th) VDS = VGS, ID = 4mA 3.0 5.5 V
IGSS VGS = ± 20V, VDS = 0V ± 100 nA
IDSS VDS = VDSS 50 μA
VGS = 0V TJ = 125°C 1.5 mA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 1.05 Ω
G = Gate D = Drain
S = Source TAB = Drain
TO-268 (IXFT)
GS
TO-247 (IXFH)
TAB
TAB
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFH12N100F
IXFT12N100F
Note: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
gfs VDS = 10V, ID = 0.5 • ID25, Note 1 8 12 S
Ciss 2700 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 305 pF
Crss 93 pF
td(on) 12 ns
tr 9.8 ns
td(off) 31 ns
tf 12 ns
Qg(on) 77 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 16 nC
Qgd 42 nC
RthJC 0.42 °C/W
RthCS (TO-247) 0.21 °C/W
Source-Drain Diode Characteristic Values
TJ = 25°C unless otherwise specified) Min. Typ. Max.
ISVGS = 0V 12 A
ISM Repetitive, pulse width limited by TJM 48 A
VSD IF = IS, VGS = 0V, Note 1 1.5 V
trr 250 ns
QRM 0.8 μC
IRM 7.0 A
IF = 12A, -di/dt = 100A/μs
VR = 100V, VGS = 0V
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
e
∅ P
TO-247 (IXFH) Outline
TO-268 Outline
Min Recommended Footprint
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 2Ω (External)