BP, Radiation sensitive devices Dispositifs sensibles aux radiations Strahlungsempfindliche Elemente DESCRIPTION RATINGS AND CHARACTERISTICS (at Tamb = 25C, unless otherwise stated) TYPE NUMBER Additional information : min Symbol] Value |Unit typ MEASURING CONDITIONS max BPW20 |PN PHOTO-DIODE (PHOLTO-VOLPAIC (a) or VR 10 Vv s[max PHOTO-CONDUCTIVE (b) (a)>] Vo 350 mV minjat E = 1000 ix OPERATION) (a)>| Tg 25 yA |minjat E = 1000 1x ; Ry, = 0 Outlines : NS212 (a)+] ty = tf 2 us |typfat Iph = 100 BA ; Ry = 1000 2 (a)>] Cj 520 pF |typlat E= 0; f = 10 kHz (b)>} Ip 30 nA |maxjat Vp =5 V3; E=0 25 LA minfat Vp = 5 V: E = 1000 1x (b)>] S 33 nA/lx [typlat Vp = 5 V (b)>} Ank 0,7 um | typ E with colour temperature of 2856 K (b)> 7,5 ma? | typ} BPW21 |LIGHT SENSOR, PN PHOTO-DIODE. VR lo v max (PHOTO-VOLTATC (a) or (a) Vo 300 mV minjat E = 1000 lx PHOTO-CONDUCTIVE (b) OPERATION), (a) Is 5 yA minjat E = 1000 lx ; RL = 0 MATCHED WITH THE SPECTRAL RESPONSE OF THE (a) [trate 2 us typ|at Iph = 100 pA ; Ry = I kQ HUMAN EYE BY BUIL!'-IN FILTER (a) | Cj 520 pF [typlac BE = 0; = 10 kHz Outlines : NS212 (b) | Ip 30 nA |maxjat Vp =5V; E=0 5 pA |minpag Vp = 5 V3; E = 1000 Lx E with colour temperature of 2856 K tp} : .s malls tye attr = 9 V BPW21M| PN PLANAR PHOTOVOLTAIC CELL (a) or Vv. 10 Vv typ PHOTODIODE (b) (a) | cB 1 nF | max| Outlines : NS312 (a) | v? 280 mV |minjat EB = 1 kix (a) | s 5 |[na/1x ]min}at R,= 100 0 (b) I 30 nA j|maxjat Vj=5 V; E=0 (b) | 17 4,5 | ya |minfat ve= 5 vs B= 1 kix (b) gt? 4,5 |nA/1x | min] at Vee 5 Vv Anke 565 nm typ tu 3,5 us typ} at Toh 100 pA; R, = 1 kQ te 3,5 us typ| at Toh = 100 yA; Re = 1 kg BPW22 |NPN PEOTO-TRANSISTOR Vero 30 Vv max Outlines: NS3CO 5 ys tmax ie 25 | mA {max Toy 50 mA max 3 Pp 50 mW max} at T p72 C(max) mer 100 c | max am Renjamb 1500 |C/W |max a 800 nm typ gpeak 2 pA/1x | typ tl 7,5 us [typ te us |typ BPW23 | NPN PHOTO-TRANSISYOR see BPW22 but Outlines: NS316 BPW24 | PHOTO PIN DIODE VR 50 Vv {max > Ultra high-speed phcto-detector Py 180 mW |maxjat T,4=25C(max) Outlines:110e Ts 100 C |max Rthjamb 400 C/W} max photovoltaic cell operation|V, 380 mV [typjat E=lklx S 35 nA/lx | typ L 35 A typ{at E=Ikilx,R,=100 ohms ck 60 pF typ] at V=0, =50UkHz,E=0 photodiode operation Vipr) 80 v typ I 5 nA |{max|at Vp=20V,E=0 yr 45 pA |typ}at Vp=20V,E=Ik1x,Rz,=100 ohms st? 45 |nA/ix | typ| at Vp=20V C3 40 pF | typlat Vp=5V, =500kHz Cy 6 pF |typ|at Vp=20V, =500kHz