DATA SH EET
Product specification
Supersedes data of April 1991
File under Discrete Semiconductors, SC07
1997 Dec 05
DISCRETE SEMICONDUCTORS
BFR30; BFR31
N-channel field-effect transistors
1997 Dec 05 2
Philips Semiconductors Product specification
N-channel field-effect transistors BFR30; BFR31
DESCRIPTION
Planar epitaxial symmetrical junction N-channel
field-effect transistor in a plastic SOT23 package.
APPLICATIONS
•Low level general purpose amplifiers in thick and
thin-film circuits.
PINNING - SOT23
Note
1. Drain and source are interchangeable.
PIN SYMBOL DESCRIPTION
1 d drain(1)
2 s source(1)
3 g gate
CAUTION
This product is supplied in anti-static packing to prevent
damage caused by electrostatic discharge during
transport and handling. For further information, refer to
Philips specs.: SNW-EQ-608, SNW-FQ-302A and
SNW-FQ-302B.
Fig.1 Simplified outline and symbol.
Marking codes:
BFR30: M1p.
BFR31: M2p.
handbook, halfpage
12
g
d
s
3
Top view
MAM385
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage −±25 V
VGSO gate-source voltage open drain −−25 V
Ptot total power dissipation Tamb ≤40 °C−250 mW
IDSS drain current VGS = 0; VDS =10V
BFR30 4 10 mA
BFR31 1 5 mA
yfscommon-source transfer admittance ID= 1 mA; VDS = 10 V; f = 1 kHz
BFR30 1 4 mS
BFR31 1.5 4.5 mS
1997 Dec 05 3
Philips Semiconductors Product specification
N-channel field-effect transistors BFR30; BFR31
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Mounted on a ceramic substrate of 8 ×10 ×0.7 mm.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage −±25 V
VDGO drain-gate voltage open source −−25 V
VGSO gate-source voltage open drain −−25 V
IDdrain current −10 mA
IGforward gate current (DC) −5mA
P
tot total power dissipation Tamb ≤40 °C; note 1; see Fig.2 −250 mW
Tstg storage temperature −65 +150 °C
Tjoperating junction temperature −150 °C
Fig.2 Power derating curve.
handbook, halfpage
0Tamb (°C)
Ptot
(mW)
300
200
100
040 200
80 120 160
MDA245
THERMAL CHARACTERISTICS
Note
1. Mounted on a ceramic substrate of 8 ×10 ×0.7 mm.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 430 K/W
1997 Dec 05 4
Philips Semiconductors Product specification
N-channel field-effect transistors BFR30; BFR31
CHARACTERISTICS
Tj=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
IGSS gate cut-off current VDS = 0; VGS =−10 V −−0.2 nA
IDSS drain current VGS = 0; VDS =10V
BFR30 4 10 mA
BFR31 1 5 mA
VGS gate-source voltage ID= 1 mA; VDS =10V
BFR30 −0.7 −3V
BFR31 0 −1.3 V
VGS gate-source voltage ID=50µA; VDS =10V
BFR30 −−4V
BFR31 −−2V
V
GSoff gate-source cut-off voltage ID= 0.5 nA; VDS =10V
BFR30 −−5V
BFR31 −−2.5 V
yfscommon-source transfer admittance ID= 1 mA; VDS = 10 V; f = 1 kHz;
Tamb =25°C
BFR30 1 4 mS
BFR31 1.5 4.5 mS
yfscommon-source transfer admittance ID= 200 µA; VDS = 10 V; f = 1 kHz;
Tamb =25°C
BFR30 0.5 −mS
BFR31 0.75 −mS
yoscommon source output admittance ID= 1 mA; VDS = 10 V; f = 1 kHz
BFR30 −40 µS
BFR31 −25 µS
yoscommon source output admittance ID= 200 µA; VDS = 10 V; f = 1 kHz
BFR30 −20 µS
BFR31 −15 µS
Cis input capacitance VDS =10V; f=1MHz
I
D=1mA −4pF
I
D
= 0.2 nA −4pF
C
rs feedback capacitance VDS = 10 V; f = 1 MHz; Tamb =25°C
I
D=1mA −1.5 pF
ID= 200 µA−1.5 pF
Vnequivalent input noise voltage ID= 200 µA; VDS =10V;
B = 0.6 to 100 Hz −0.5 µV
1997 Dec 05 5
Philips Semiconductors Product specification
N-channel field-effect transistors BFR30; BFR31
Fig.3 Input characteristics.
BFR30.
VDS = 10 V; Tj=25°C.
handbook, halfpage
−4
10
8
2
6
4
0−3−20
max
typ
min
VGS (V)
ID
(mA)
−1
MDA657
Fig.4 Output characteristics; typical values.
BFR30.
Tj=25°C.
handbook, halfpage
010
10
0
2
4
6
8
2468
MDA658
VDS (V)
ID
(mA)
VGS = 0 V
−0.5
−1.0
−1.5
−2.0
Fig.5 Input characteristics.
BFR31.
VDS = 10 V; Tj=25°C.
handbook, halfpage
−50
5
0
1
2
3
4
−4−3−2−1
MDA659
max
typ
min
VGS (V)
ID
(mA)
Fig.6 Output characteristics; typical values.
BFR31.
Tj=25°C.
handbook, halfpage
010
5
0
1
2
3
4
2468
MDA660
VDS (V)
ID
(mA)
VGS = 0 V
−0.2
−0.4
−0.6
−0.8
−1
−1.2
1997 Dec 05 6
Philips Semiconductors Product specification
N-channel field-effect transistors BFR30; BFR31
Fig.7 Drain current as a function of junction
temperature; typical values.
BFR30.
VDS =10V.
handbook, halfpage
25 50 75 125
ID
(mA)
6
4
2
0100
MDA661
Tj (°C)
VGS = 0 V
−0.5
−1.0
−1.5
−2.0
Fig.8 Drain current as a function of junction
temperature; typical values.
BFR31.
VDS =10V.
handbook, halfpage
−1
−1.2
25 50 75 125
ID
(mA)
6
4
2
0100
MDA662
Tj (°C)
−0.2
−0.4
−0.6
−0.8
VGS =
0 V
Fig.9 Gatecut-off current as a function of junction
temperature; typical values.
VGS =−10 V; VDS =0.
handbook, halfpage
20010050
IGSS
(nA)
0 150 Tj (°C)
10
1
10−1
10−2
10−3
MDA656
Fig.10 Gate-source cut-off voltage as a function of
drain current; typical values.
ID= 0.5 nA; VDS = 10 V; VGS = 0; Tj=25°C.
handbook, halfpage
010
−6
0
−2
−4
2
I
DSS (mA)
VGS(off)
(V)
468
MDA663
BFR31
BFR30
1997 Dec 05 7
Philips Semiconductors Product specification
N-channel field-effect transistors BFR30; BFR31
Fig.11 Common source transfer admittance as a
function of drain current; typical values.
VDS = 10 V; f = 1 kHz; Tamb =25°C.
handbook, halfpage
0
7.5
5
2.5
02ID (mA)
46
MDA664
yfs
(mA/V)
BFR30
BFR31
Fig.12 Common source output admittance as a
function of drain current; typical values.
VDS = 10 V; f = 1 kHz; Tamb =25°C.
handbook, halfpage
0
75
50
25
02ID (mA)
46
BFR30
BFR31
MDA665
yos
(µA/V)
Fig.13 Common source output admittance as a
function of drain-source voltage;
typical values.
f = 1 kHz; Tamb =25°C.
(1) ID= 4 mA. (2) ID= 1 mA.
handbook, halfpage
30
(2) BFR30
BFR31
01020
V
DS (V)
104
103
102
10
MDA666
|yos|
(µA/V)
(1)
Fig.14 Input capacitance as a function of
gate-source voltage; typical values.
VDS = 10 V; f = 1 MHz; Tamb =25°C.
handbook, halfpage
0−5
5
0
1
2
3
4
−1−2−3
Cis
(pF)
VGS (V)
−4
MDA667
1997 Dec 05 8
Philips Semiconductors Product specification
N-channel field-effect transistors BFR30; BFR31
Fig.15 Feedback capacitance as a function of
gate-source voltage; typical values.
VDS = 10 V; f = 1 MHz; Tamb =25°C.
handbook, halfpage
0−5
−1
0
−0.2
−0.4
−0.6
−0.8
−1−2−3
Crs
(pF)
VGS (V)
−4
MDA668
Fig.16 Equivalent noise voltage source as a function of frequency; typical values.
VDS = 10 V; Tamb =25°C.
(1) BFR31; ID= 1 mA.
(2) BFR30; ID= 4 mA.
handbook, full pagewidth
104
103
102
10
1
10 102103104f (Hz)
105106
MDA669
(1)
(2)
e
n
(nV/ Hz)
1997 Dec 05 9
Philips Semiconductors Product specification
N-channel field-effect transistors BFR30; BFR31
Fig.17 Equivalent noise current source as a function of frequency; typical values.
handbook, full pagewidth
104
103
102
10
1
10 102103104f (Hz)
105106
MDA670
i
n
(fA/ Hz)
(1)
(2)
VDS = 10 V; Tamb =25°C.
(1) BFR31; ID= 1 mA.
(2) BFR30; ID= 4 mA.
1997 Dec 05 10
Philips Semiconductors Product specification
N-channel field-effect transistors BFR30; BFR31
PACKAGE OUTLINE
UNIT A1
max. bpcDE e1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
97-02-28
IEC JEDEC EIAJ
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
wM
vMA
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface mounted package; 3 leads SOT23
1997 Dec 05 11
Philips Semiconductors Product specification
N-channel field-effect transistors BFR30; BFR31
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
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© Philips Electronics N.V. 1997 SCA56
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Printed in The Netherlands 117067/00/02/pp12 Date of release: 1997 Dec 05 Document order number: 9397 750 03154
