INSULATED GATE BIPOLAR TRANSISTOR
1www.irf.com
07/27/12
VCES = 1200V
IC = 75A, TC = 100°C
TJ(max) =175°C
VCE(on) typ. = 1.7V
Features
• Low VCE (ON) trench IGBT technology
• Low switching losses
• Maximum junction temperature 175 °C
• Square RBSOA
• 100% of the parts tested for ILM
• Positive VCE (ON) temperature co-efficient
• Tight parameter distribution
• Lead -Free
Benefits
• High efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
low VCE (ON) and low switching losses
• Rugged transient performance for increased reliability
• Excellent current sharing in parallel operation
E
C
G
n-channel
G
C
E
Gate Collector Emitter
TO-247AC
IRG7PH46UPbF
TO-247AD
IRG7PH46U-EP
IRG7PH46UPbF
IRG7PH46U-EP
Applications
• U.P.S
• Welding
• Solar inverter
• Induction heating
GCE
C
Absolute Maximum Ratings
Parameter Max. Units
V
CES
Collector-to-Emitter Voltage 1200 V
I
C
@ T
C
= 25°C Continuous Collector Current (Silicon Limited) 130
g
I
C
@ T
C
= 100°C Continuous Collector Current (Silicon Limited) 75
I
NOMINAL
Nominal Current 40
I
CM
Pulse Collector Current, V
GE
= 20V 160
I
LM
Clamped Inductive Load Current, V
GE
= 20V
c
160
V
GE
Continuous Gate-to-Emitter Voltage ±30 V
P
D
@ T
C
= 25°C Maximum Power Dissipation 469
P
D
@ T
C
= 100°C Maximum Power Dissipation 234
T
J
Operating Junction and -55 to +175
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter Min. Typ. Max. Units
R
θJC
(IGBT) Thermal Resistance Junction-to-Case-(each IGBT) TO-247AC
f
––– ––– 0.32
R
θCS
Thermal Resistance, Case-to-Sink (flat, greased surface)
f
––– 0.24 –––
R
θJA
Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– 40 –––
A
W
°C/W
C
GC
E
PD - 96305A
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IRG7PH46UPbF/IRG7PH46U-EP
Notes:
VCC = 80% (VCES), VGE = 20V, L = 25μH, RG = 50Ω
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Rθ is measured at TJ of approximately 90°C.
Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 117A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage 1200 — — V V
GE
= 0V, I
C
= 100μA
e
ΔV
(BR)CES
/ΔT
J
Temperature Coeff. of Breakdown Voltage
— 1.2 — V/°C V
GE
= 0V, I
C
= 1mA (25°C-150°C)
e
—1.72.0 I
C
= 40A, V
GE
= 15V, T
J
= 25°C
d
V
CE(on)
Collector-to-Emitter Saturation Voltage — 2.0 — V I
C
= 40A, V
GE
= 15V, T
J
= 150°C
d
—2.1— I
C
= 40A, V
GE
= 15V, T
J
= 175°C
d
V
GE(th)
Gate Threshold Voltage 3.0 — 6.0 V V
CE
= V
GE
, I
C
= 1.6mA
ΔV
GE(th)
/ΔTJ
Threshold Voltage temp. coefficient — -15 — mV/°C V
CE
= V
GE
, I
C
= 1.6mA (25°C - 175°C)
gfe Forward Transconductance — 60 — S V
CE
= 50V, I
C
= 40A, PW = 20μs
I
CES
Collector-to-Emitter Leakage Current — 1 100 V
GE
= 0V, V
CE
= 1200V
—1170— V
GE
= 0V, V
CE
= 1200V, T
J
= 175°C
I
GES
Gate-to-Emitter Leakage Current — — ±200 nA V
GE
= ±30V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
Q
g
Total Gate Charge (turn-on) — 220 320 I
C
= 40A
d
Q
ge
Gate-to-Emitter Charge (turn-on) — 30 50 nC V
GE
= 15V
Q
gc
Gate-to-Collector Charge (turn-on) — 85 130 V
CC
= 600V
E
on
Turn-On Switching Loss — 2560 3460 I
C
= 40A, V
CC
= 600V, V
GE
= 15V
d
E
off
Turn-Off Switching Loss — 1780 2660 μJR
G
= 10Ω, L = 200μH,T
J
= 25°C
E
total
Total Switching Loss — 4340 6120 Energy losses include tail & diode reverse recovery
t
d(on)
Turn-On delay time — 45 65 Diode clamp the same as IRG7PH46UDPbF
t
r
Rise time — 40 55 ns
t
d(off)
Turn-Off delay time — 410 445
t
f
Fall time — 45 65
E
on
Turn-On Switching Loss — 3950 — I
C
= 40A, V
CC
= 600V, V
GE
=15V
d
E
off
Turn-Off Switching Loss — 3020 — μJR
G
=10Ω, L=200μH, T
J
= 175°C
E
total
Total Switching Loss — 6970 — Energy losses include tail & diode reverse recovery
t
d(on)
Turn-On delay time — 40 — Diode clamp the same as IRG7PH46UDPbF
t
r
Rise time — 40 — ns
t
d(off)
Turn-Off delay time — 480 —
t
f
Fall time — 220 —
C
ies
Input Capacitance — 4820 — pF V
GE
= 0V
C
oes
Output Capacitance — 150 — V
CC
= 30V
C
res
Reverse Transfer Capacitance — 110 — f = 1.0Mhz
I
C
= 160A
RBSOA Reverse Bias Safe Operating Area FULL SQUARE V
CC
= 960V, Vp =1200V
Rg = 10Ω, V
GE
= +20V to 0V, T
J
=175°C
Conditions
μA
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IRG7PH46UPbF/IRG7PH46U-EP
Fig. 2 - Maximum DC Collector Current vs.
Case Temperature
Fig. 3 - Power Dissipation vs. Case
Temperature
Fig. 4 - Forward SOA
TC = 25°C, TJ ≤ 175°C; VGE =15V
Fig. 5 - Reverse Bias SOA
TJ = 175°C; VGE =20V
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
0 20 40 60 80 100 120 140 160 180
TC (°C)
0
50
100
150
200
250
300
350
400
450
500
Ptot (W)
25 50 75 100 125 150 175
TC (°C)
0
20
40
60
80
100
120
140
IC (A)
10 100 1000 10000
VCE (V)
1
10
100
1000
IC (A)
0.1 110 100
f , Frequency ( kHz )
0
20
40
60
80
100
Load Current ( A )
For both:
Duty cycle : 50%
Tj = 150°C
Tc = 100°C
Vcc = 600V
Gate drive as specified
Power Dissipation = 154W
I
Square Wave:
VCC
Diode as specified
1 10 100 1000 10000
VCE (V)
0.1
1
10
100
1000
IC (A)
1msec
10μsec
100μsec
Tc = 25°C
Tj = 175°C
Single Pulse
DC
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IRG7PH46UPbF/IRG7PH46U-EP
Fig. 8 - Typ. IGBT Output Characteristics
TJ = 175°C; tp = 20μs
Fig. 10 - Typical VCE vs. VGE
TJ = 25°C Fig. 11 - Typical VCE vs. VGE
TJ = 175°C
Fig. 9 - Typical VCE vs. VGE
TJ = -40°C
Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp =20μs
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 20μs
0246810
VCE (V)
0
20
40
60
80
100
120
140
160
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0246810
VCE (V)
0
20
40
60
80
100
120
140
160
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0246810
VCE (V)
0
20
40
60
80
100
120
140
160
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
4 8 12 16 20
VGE (V)
0
2
4
6
8
10
12
VCE (V)
ICE = 20A
ICE = 40A
ICE = 80A
4 8 12 16 20
VGE (V)
0
2
4
6
8
10
12
VCE (V)
ICE = 20A
ICE = 40A
ICE = 80A
4 8 12 16 20
VGE (V)
0
2
4
6
8
10
12
VCE (V)
ICE = 20A
ICE = 40A
ICE = 80A
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IRG7PH46UPbF/IRG7PH46U-EP
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L = 200μH; VCE = 600V, RG = 10Ω; VGE = 15V Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 200μH; VCE = 600V, ICE = 40A; VGE = 15V
Fig. 16 - Typ. Switching Time vs. RG
TJ = 175°C; L = 200μH; VCE = 600V, ICE = 40A; VGE = 15V
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 200μH; VCE = 600V, RG = 10Ω; VGE = 15V
Fig. 12- Typ. Transfer Characteristics
VCE = 50V; tp = 20μs
3456789
VGE, Gate-to-Emitter Voltage (V)
0
20
40
60
80
100
120
140
160
ICE, Collector-to-Emitter Current (A)
TJ = 25°C
TJ = 175°C
0 1020304050607080
IC (A)
200
1200
2200
3200
4200
5200
6200
7200
8200
9200
Energy (μJ)
EOFF
E
ON
0 255075100
Rg (Ω)
2000
4000
6000
8000
10000
Energy (μJ)
EOFF
EON
020 40 60 80 100
RG (Ω)
10
100
1000
10000
Swiching Time (ns)
tdOFF
tF
tdON
tR
010 20 30 40 50 60 70 80
IC (A)
10
100
1000
Swiching Time (ns)
tdOFF
tF
tdON
tR
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IRG7PH46UPbF/IRG7PH46U-EP
Fig 19. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) TO-247AC
Fig. 17 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
Fig. 18- Typical Gate Charge vs. VGE
ICE = 40A; L = 2.4mH
0100 200 300 400 500 600
VCE (V)
10
100
1000
10000
Capacitance (pF)
Cies
Coes
Cres
0 50 100 150 200 250
Q G, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
VGE, Gate-to-Emitter Voltage (V)
VCES = 600V
VCES = 400V
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) τi (sec)
0.006 0.000011
0.090 0.000177
0.142 0.002958
0.085 0.015029
τJ
τJ
τ1
τ1
τ2
τ2τ3
τ3
R1
R1R2
R2R3
R3
Ci i/Ri
Ci= τi/Ri
τ
τC
τ4
τ4
R4
R4
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IRG7PH46UPbF/IRG7PH46U-EP
Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit
Fig.C.T.3 - Switching Loss Circuit Fig.C.T.4 - Resistive Load Circuit
Fig.C.T.5 - BVCES Filter Circuit
100K
22K
DUT
D1
0.0075 μ
G force
C fo rce
C sen se
E fo rce
E sen se
L
Rg
80 V DUT
Vclamped
+
-
L
Rg
VCC
DIODE CLAMP
DUT /
DRIVER
1K
VCC
DUT
0
L
Rg
VCC
DUT
R = VCC
ICM
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IRG7PH46UPbF/IRG7PH46U-EP
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 175°C using Fig. CT.4
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
-100
0
100
200
300
400
500
600
700
800
900
-0.5 0 0.5 1 1.5 2
time(μs)
V
CE
(V)
-10
0
10
20
30
40
50
60
70
80
90
I
CE
(A)
90% I
CE
5% V
CE
5% I
CE
Eoff Loss
tf
-100
0
100
200
300
400
500
600
700
800
900
-0.3 -0.1 0.1 0.3 0.5
time (μs)
V
CE
(V)
-10
0
10
20
30
40
50
60
70
80
90
I
CE
(A)
TEST
CURRENT
90% test
current
5% V
10% test
current
tr
Eon
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IRG7PH46UPbF/IRG7PH46U-EP
TO-247AC Part Marking Information
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
YEAR 1 = 2001
DAT E CODE
PART NUMBER
INTERNAT IONAL
LOGO
RECTIFIER
AS S E MB L Y
56 57
IRFPE30
135H
LINE H
indi cates "L ead- F r ee" WE E K 35LOT CODE
IN THE ASSEMBLY LINE "H"
AS S E MB L E D ON WW 35, 2001
Note: "P" in as sembly line position
EXAMPLE:
WIT H AS S E MB L Y
THIS IS AN IRFPE30
LOT CODE 5657
10 www.irf.com
IRG7PH46UPbF/IRG7PH46U-EP
TO-247AD Part Marking Information
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
IR WORLD HEADQUARTERS: 101N Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/2012
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
ASSEMBLY YEAR 0 = 2000
AS S EMBLED ON WW 35, 2000
IN THE ASSEMBLY LINE "H"
EXAMPLE: THIS IS AN IRGP30B 120KD-E
LOT CODE 5657
WITH ASSEMBLY PART NUMBER
DAT E CODE
INTERNATIONAL
RECT IFIER
LOGO 035H
56 57
WEEK 35
LINE H
LOT CODE
Note: "P" in as s embly line pos ition
i ndi cates "L ead- F ree"