APTGF25DDA120T3G VCES = 1200V IC = 25A @ Tc = 80C Dual Boost Chopper NPT IGBT Power Module Application * AC and DC motor control * Switched Mode Power Supplies * Power Factor Correction 13 14 CR2 CR1 23 8 Q1 Q2 26 4 27 3 29 30 31 15 32 16 R1 28 27 26 25 20 19 18 23 22 29 16 30 15 31 14 32 13 2 3 4 7 8 10 11 12 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 ... Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * Easy paralleling due to positive TC of VCEsat * Each leg can be easily paralleled to achieve a single boost of twice the current capability. * RoHS compliant Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area TC = 25C Max ratings 1200 40 25 100 20 208 Tj = 125C 50A@1150V TC = 25C TC = 80C TC = 25C Unit V July, 2006 7 A V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTGF25DDA120T3G - Rev 1 22 Features * Non Punch Through (NPT) Fast IGBT(R) - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated - Symmetrical design * Kelvin emitter for easy drive * Very low stray inductance * High level of integration * Internal thermistor for temperature monitoring APTGF25DDA120T3G All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate - Emitter Leakage Current Tj = 25C Tj = 125C T VGE =15V j = 25C IC = 25A Tj = 125C VGE = VCE , IC = 1mA VGE = 20V, VCE = 0V Tf Td(on) Tr Td(off) Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Emitter Charge Gate - Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Test Conditions VGE = 0V VCE = 25V f = 1MHz Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Min Chopper diode ratings and characteristics Symbol Characteristic VRRM IRM Test Conditions IF Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Typ 1650 250 110 160 10 70 60 50 305 Max 250 500 3.7 IF = 60A IF = 120A IF = 60A IF = 60A VR = 800V di/dt =200A/s www.microsemi.com V V nA Max Unit pF nC ns 60 50 346 ns 40 3.5 mJ 1.5 Typ Max Unit V Tj = 25C Tj = 125C Tc = 70C A 6 400 1200 VR=1200V Unit 30 Min Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current 3.2 4.0 4 Inductive Switching (25C) VGE = 15V VBus = 400V IC = 25A R G = 22 Inductive Switching (125C) VGE = 15V VBus = 400V IC = 25A R G = 22 VGE = 15V Tj = 125C VBus = 400V IC = 25A Tj = 125C R G = 22 Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time 2.5 VGE = 15V VBus = 300V IC =25A Fall Time Tf Typ VGE = 0V VCE = 1200V Dynamic Characteristics Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Min 250 500 Tj = 125C 60 2 2.3 1.8 Tj = 25C 400 Tj = 125C 470 Tj = 25C 1.2 Tj = 125C 4 A A 2.5 July, 2006 ICES Test Conditions V ns C 2-6 APTGF25DDA120T3G - Rev 1 Symbol Characteristic APTGF25DDA120T3G Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K RT = R 25 Max Unit k K Min Typ Max 0.6 0.9 Unit T: Thermistor temperature Thermal and package characteristics VISOL TJ TSTG TC Torque Wt Typ 50 3952 1 1 RT : Thermistor value at T exp B 25 / 85 - T25 T Symbol Characteristic RthJC Min IGBT Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 2500 -40 -40 -40 2.5 C/W V 150 125 100 4.7 110 C N.m g 12 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3-6 APTGF25DDA120T3G - Rev 1 28 17 1 July, 2006 SP3 Package outline (dimensions in mm) APTGF25DDA120T3G Typical Performance Curve Output characteristics (VGE=15V) 250s Pulse Test < 0.5% Duty cycle 70 TJ=25C 60 50 TJ=125C 40 30 20 10 16 TJ=25C 12 8 TJ=125C 4 1 2 3 4 5 6 7 VCE, Collector to Emitter Voltage (V) 0 8 VGE, Gate to Emitter Voltage (V) Transfer Characteristics 120 250s Pulse Test < 0.5% Duty cycle 100 80 60 40 TJ=125C 20 T J=25C 0 2.5 5 7.5 10 12.5 VGE, Gate to Emitter Voltage (V) TJ = 125C 250s Pulse Test < 0.5% Duty cycle 8 7 Ic=50A 6 5 Ic=25A 4 3 2 Ic=12.5A 1 0 9 10 11 12 13 14 15 2 IC = 25A 16 2.5 3 3.5 V CE =240V TJ = 25C V CE=600V 14 12 10 V CE =960V 8 6 4 2 0 0 30 60 90 120 150 180 16 On state Voltage vs Junction Temperature 6 250s Pulse Test < 0.5% Duty cycle VGE = 15V 5 3 Ic=12.5A 2 1 0 -50 Breakdown Voltage vs Junction Temp. 1.00 0.95 0.90 0.85 0.80 125 50 40 July, 2006 Ic, DC Collector Current (A) 1.05 -25 0 25 50 75 100 TJ, Junction Temperature (C) DC Collector Current vs Case Temperature 60 1.10 Ic=50A Ic=25A 4 VGE, Gate to Emitter Voltage (V) Collector to Emitter Breakdown Voltage (Normalized) 1.5 Gate Charge (nC) On state Voltage vs Gate to Emitter Volt. 9 1 Gate Charge 18 15 VCE, Collector to Emitter Voltage (V) 0 0.5 VCE, Collector to Emitter Voltage (V) 30 20 10 0 -50 -25 0 25 50 75 100 TJ, Junction Temperature (C) 125 -50 www.microsemi.com -25 0 25 50 75 100 TC, Case Temperature (C) 125 150 4-6 APTGF25DDA120T3G - Rev 1 0 Ic, Collector Current (A) 250s Pulse Test < 0.5% Duty cycle 0 0 VCE, Collector to Emitter Voltage (V) Output Characteristics (VGE=10V) 20 Ic, Collector Current (A) Ic, Collector Current (A) 80 APTGF25DDA120T3G Turn-Off Delay Time vs Collector Current td(off), Turn-Off Delay Time (ns) V CE = 600V RG = 22 70 65 V GE = 15V 60 55 50 5 15 25 35 45 400 V GE=15V, TJ=125C 350 300 250 200 55 5 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current V CE = 600V RG = 22 120 45 tf, Fall Time (ns) tr, Rise Time (ns) 35 45 55 Current Fall Time vs Collector Current 80 V GE=15V 40 0 5 T J = 125C 40 35 TJ = 25C 30 15 25 35 45 V CE = 600V, VGE = 15V, RG = 22 20 55 5 ICE, Collector to Emitter Current (A) V CE = 600V R G = 22 8 TJ=125C, V GE=15V 6 TJ=25C, V GE =15V 4 2 0 55 4 V CE = 600V V GE = 15V RG = 22 3 TJ = 125C 2 TJ = 25C 1 0 5 15 25 35 45 ICE, Collector to Emitter Current (A) 55 5 Switching Energy Losses vs Gate Resistance 15 25 35 45 ICE, Collector to Emitter Current (A) 55 Reverse Bias Safe Operating Area 60 IC, Collector Current (A) Eon, 25A 3 Eoff, 25A 2 1 0 50 40 30 July, 2006 VCE = 600V VGE = 15V T J= 125C 4 15 25 35 45 ICE, Collector to Emitter Current (A) Turn-Off Energy Loss vs Collector Current Turn-On Energy Loss vs Collector Current 10 Eoff, Turn-off Energy Loss (mJ) Eon, Turn-On Energy Loss (mJ) 25 50 25 Switching Energy Losses (mJ) 15 ICE, Collector to Emitter Current (A) 160 5 V GE=15V, TJ=25C V CE = 600V R G = 22 20 10 0 0 10 20 30 40 50 60 0 Gate Resistance (Ohms) 400 800 1200 VCE, Collector to Emitter Voltage (V) www.microsemi.com 5-6 APTGF25DDA120T3G - Rev 1 td(on), Turn-On Delay Time (ns) Turn-On Delay Time vs Collector Current 75 APTGF25DDA120T3G Fmax, Operating Frequency (kHz) C, Capacitance (pF) Capacitance vs Collector to Emitter Voltage 10000 Cies 1000 Coes 100 Cres 10 0 10 20 30 40 VCE, Collector to Emitter Voltage (V) Thermal Impedance (C/W) 0.5 100 80 ZVS VCE = 600V D = 50% RG = 22 TJ = 125C TC= 75C 60 40 Hard switching ZCS 20 0 50 0 10 20 30 IC, Collector Current (A) 40 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.7 0.6 Operating Frequency vs Collector Current 120 0.9 0.7 0.4 0.3 0.2 0.1 0.5 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6-6 APTGF25DDA120T3G - Rev 1 July, 2006 Rectangular Pulse Duration (Seconds)