3
1997 Fairchild Semiconductor Corporation
NPN General Purpose Amplifier
Absolute Maximum Ratings* T A = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics T A = 25°C unless otherwise noted
BCW71
Symbol Characteristic Max Units
*BCW71
PDTotal Device Dissipation
Derate above 25°C350
2.8 mW
mW/°C
RθJA Thermal Resis t ance, Junc t i on to A mbient 357 °C/W
Symbol Parameter Value Units
VCEO Collec t or-Emitt er V ol tage 45 V
VCES Collec t or-Bas e Voltage 50 V
VEBO Emi tter-Base Voltage 5.0 V
ICCollect or Current - Cont i nuous 500 mA
TJ, Tstg Operating and Storage Junc tion Temperature Range -55 to +150 °C
C
E
B
SOT-23
Mark: K1
This device is designed for general purpose amplifier
applications at collector currents to 300 mA. Sourced from
Process 10.
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
BCW71
BCW71
NPN General Purpose Amplifier
(continued)
Electrical Characteristics T A = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol Parameter Test Conditions Min Typ Max Units
V(BR)CEO Collect or-E mitter B reak down
Voltage IC = 1.0 m A , IB = 0 45 V
V(BR)CBO Collect or-B as e B reak down Voltage IC = 10 µA, IE = 0 50 V
V(BR)EBO Emitter-B as e B reak down Voltage IE = 10 µA, IC = 0 5.0 V
ICBO Collector-Cutoff Current VCB = 20 V, I E = 0
VCB = 20 V, IE = 0, TA = 100°C100
10 µA
ON CHARACTERISTICS
hFE DC Current Gain IC = 2.0 mA, VCE = 5.0 V 110 220
VCE(sat)Collector-Emit t er Saturation V ol tage IC = 10 mA, IB = 0.5 mA 0.25 V
VBE(sat)Base-Em itter Saturation Voltage IC = 50 mA, IB = 2. 5 mA 0.85 V
VBE(on)Base-Em itter On Voltage IC = 2. 0 m A , VCE = 5.0 V 0.6 0.75 V
SMALL SIGNAL CHARACTERISTICS
fTCurrent Gain - Bandwidth Product IC = 10 mA , VCE = 5.0 V,
f = 35 MHz 330 MHz
Cobo Output Capacitance VCE = 10 V, I E = 0, f = 1.0 MHz 4.0 pF
Cibo Input Capacitance VEB = 0.5 V, IC = 0, f = 1.0 MHz 9.0 pF
NF Noise Figure IC = 0.2 m A, VCE = 5.0 V,
RS = 2.0 kΩ, f = 1.0 kHz,
BW = 200 Hz
10 dB
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
10 20 30 50 100 200 300 500
0
100
200
300
400
I - COLLECTOR CURRENT (mA)
h - TYPICAL PULSED CURRENT GAIN
C
FE
125 °C
25 °C
- 40 °C
Vce = 5V
Collector-Emitter Saturation
Vol t age vs Col lector Cu rren t
110100400
0.1
0.2
0.3
0.4
I - COLLEC TO R CUR RENT (m A)
V - COLL ECTOR-EMITT ER VOLTA GE (V)
C
CESAT
25 °C
- 40 °C
125 °C
β = 10
3
Power Dissipation vs
Ambient Temperature
0 25 50 75 100 125 150
0
50
100
150
200
250
300
350
TEMPERATURE ( C)
P - POWER DISSIPATION (mW)
D
o
SOT-23
Typical Characteristics (continued)
Switching Times vs
Collector Current
10 20 30 50 100 200 300
0
30
60
90
120
150
180
210
240
270
300
I - COLLECTOR CURRENT (mA)
TI ME (n S)
IB1 = IB2 = Ic / 10
V = 10 V
C
cc
ts
td
tftr
Base-Emitter Saturati on
Volt age vs Collector Cu rrent
0.1 1 10 100 300
0.2
0.4
0.6
0.8
1
I - CO LL ECTOR CUR RENT (mA)
V - CO L LE CT O R - E MITTER VOLTA GE ( V)
β = 10
C
BESAT
25 °C
- 40 °C
125 °C
Base-Emitter ON Voltage vs
Co lle ct or Cur r ent
110100500
0.2
0.4
0.6
0.8
1
I - COLLEC TO R CUR RE NT (m A)
V - BASE-EMI TTER ON V O LTAGE (V)
C
BEON
V = 5V
CE
25 °C
- 40 °C
125 °C
Input and Output Capac itance
vs Revers e Voltag e
0.1 1 10 100
0.1
1
10
100
V - COLLECTOR VOLT AGE (V)
CA PACITANCE (pF)
Cib
Cob
f = 1. 0 MHz
ce
C o ll ector-C u to ff Cu r rent
vs A mbient Temp erature
25 50 75 100 125 150
0.1
1
10
T - A M BIE NT TEMP ERA TURE ( C)
I - CO LLECTOR CURRE NT (nA)
A
CBO
V = 6 0V
°
CB
BCW71
NPN General Purpose Amplifier
(continued)
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not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
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OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
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