For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11
11 - 2
LINEAR & POWER AMPLIFIERS - SMT
HMC327MS8G / 327MS8GE
GaAs InGaP HBT MMIC
1/2 WATT POWER AMPLIFIER, 3 - 4 GHz
v06.1209
General Description
Features
Functional Diagram
The HMC327MS8G(E) is a high efficiency GaAs
InGaP Heterojunction Bipolar Transistor (HBT) MMIC
power ampli er which operates between 3 and 4 GHz.
The ampli er is packaged in a low cost, surface mo-
unt 8 leaded package with an exposed base for
improved RF and thermal performance. With a mini-
mum of external components, the ampli er provides
21 dB of gain, +30 dBm of saturated power at 45%
PAE from a single +5V supply. Power down capability
is available to conserve current consumption when the
ampli er is not in use.
High Gain: 21 dB
Saturated Power: +30 dBm @ 45% PAE
Output P1dB: +27 dBm
Single Supply: +5V
Power Down Capability
Low External Part Count
Compact MSOP Package: 14.8 mm2
Electrical Speci cations, TA = +25 °C, Vs = 5V, Vctl = 5V
Typical Applications
The HMC327MS8G(E) is ideal for:
• Wireless Local Loop
• WiMAX & Fixed Wireless
• Access Points
• Subscriber Equipment
Parameter Min. Typ. Max. Units
Frequency Range 3 - 4 GHz
Gain 17 21 24 dB
Gain Variation Over Temperature 0.025 0.035 dB / °C
Input Return Loss 15 dB
Output Return Loss 8dB
Output Power for 1dB Compression (P1dB) 24 27 dBm
Saturated Output Power (Psat) 30 dBm
Output Third Order Intercept (IP3) 36 40 dBm
Noise Figure 5dB
Supply Current (Icq) Vctl* = 0V/5V 0.002 / 250 mA
Control Current (Ipd) Vctl* = 5V 7 mA
Switching Speed tON, tOFF 40 ns
*See Application Circuit for proper biasing con guration.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LINEAR & POWER AMPLIFIERS - SMT
11
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Input Return Loss vs. Temperature Output Return Loss vs. Temperature
Broadband Gain & Return Loss Gain vs. Temperature
P1dB vs. Temperature Psat vs. Temperature
-25
-15
-5
5
15
25
2 2.5 3 3.5 4 4.5 5
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
-15
-12
-9
-6
-3
0
2.5 3 3.5 4 4.5
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
2.5 3 3.5 4 4.5
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
14
18
22
26
30
34
2.5 3 3.5 4 4.5
+25 C
+85 C
-40 C
Psat (dBm)
FREQUENCY (GHz)
14
18
22
26
30
34
2.5 3 3.5 4 4.5
+25 C
+85 C
-40 C
P1dB (dBm)
FREQUENCY (GHz)
0
4
8
12
16
20
24
2.5 3 3.5 4 4.5
+25 C
+85 C
-40 C
GAIN (dB)
FREQUENCY (GHz)
HMC327MS8G / 327MS8GE
v05.0509
GaAs InGaP HBT MMIC
1/2 WATT POWER AMPLIFIER, 3 - 4 GHz
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11
11 - 4
LINEAR & POWER AMPLIFIERS - SMT
Power Compression @ 3.5 GHz Output IP3 vs. Temperature
Noise Figure vs. Temperature Gain & Power vs. Supply Voltage
Reverse Isolation vs. Temperature Power Down Isolation
18
20
22
24
26
28
22
24
26
28
30
32
4.75 5 5.25
Gain
P1dB
Psat
GAIN (dB)
P1dB (dBm) & Psat (dBm)
Vcc SUPPLY VOLTAGE (V)
0
2
4
6
8
10
3 3.5 4 4.5
+25 C
+85 C
-40 C
NOISE FIGURE (dB)
FREQUENCY (GHz)
0
8
16
24
32
40
48
-5 -1 3 7 11 15
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
14
19
24
29
34
39
44
2.5 3 3.5 4 4.5
+25 C
+85 C
-40 C
IP3 (dBm)
FREQUENCY (GHz)
-60
-50
-40
-30
-20
-10
0
2.5 3 3.5 4 4.5
+25 C
+85 C
-40 C
ISOLATION (dB)
FREQUENCY (GHz)
-40
-30
-20
-10
0
2.5 3 3.5 4 4.5
ISOLATION (dB)
FREQUENCY (GHz)
HMC327MS8G / 327MS8GE
v05.0509
GaAs InGaP HBT MMIC
1/2 WATT POWER AMPLIFIER, 3 - 4 GHz
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LINEAR & POWER AMPLIFIERS - SMT
11
11 - 5
Outline Drawing
Absolute Maximum Ratings
Gain, Power & Quiescent Supply
Current vs. Vpd @ 3.5 GHz
Collector Bias Voltage (Vcc) +5.5V
Control Voltage (Vpd) +5.5V
RF Input Power (RFIN)(Vs = Vctl = +5V) +16 dBm
Junction Temperature 150 °C
Continuous Pdiss (T = 85 °C)
(derate 29 mW/°C above 85 °C) 1.88 W
Thermal Resistance
(junction to ground paddle) 34 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C
5
10
15
20
25
30
0
50
100
150
200
250
2.5 3 3.5 4 4.5 5
P1dB
Psat
Gain
Icq
GAIN (dB), P1dB (dBm), Psat (dBm)
Icq (mA)
Vctl (V)
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO
PCB RF GROUND.
Part Number Package Body Material Lead Finish MSL Rating Package Marking [3]
HMC327MS8G Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] H327
XXXX
HMC327MS8GE RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] H327
XXXX
[1] Max peak re ow temperature of 235 °C
[2] Max peak re ow temperature of 260 °C
[3] 4-Digit lot number XXXX
Package Information
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
HMC327MS8G / 327MS8GE
v05.0509
GaAs InGaP HBT MMIC
1/2 WATT POWER AMPLIFIER, 3 - 4 GHz
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11
11 - 6
LINEAR & POWER AMPLIFIERS - SMT
TL1 TL2 TL3
Impedance 50 Ohm 50 Ohm 50 Ohm
Length 0.038” 0.231” 0.1”
Note: C3 should be located <0.020” from Pin 8 (Vcc)
Note: C2 Should be located < 0.020” from L1
Pin Number Function Description Interface Schematic
1Vpd
Power Control Pin. For proper control bias, this pin should be con-
nected to 5V through a series resistor of 130 Ohms. A higher voltage is
not recommended. For lower idle current, this voltage can be reduced.
2, 4, 7 GND
Ground: Backside of package has exposed metal ground paddle that
must be connected to ground thru a short path. Vias under the device
are required.
3RFIN This pin is AC coupled
and matched to 50 Ohms.
5, 6 RFOUT RF output and bias for the output stage. The power supply for the
output device needs to be supplied to these pins.
8Vcc
Power supply voltage for the rst ampli er stage. An external bypass
capacitor of 330 pF is required. This capacitor should be placed as
close to the device as possible.
Pin Descriptions
Application Circuit
HMC327MS8G / 327MS8GE
v05.0509
GaAs InGaP HBT MMIC
1/2 WATT POWER AMPLIFIER, 3 - 4 GHz
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LINEAR & POWER AMPLIFIERS - SMT
11
11 - 7
Evaluation PCB
The circuit board used in the application should
use RF circuit design techniques. Signal lines sho-
uld have 50 Ohm impedance while the package
ground leads and exposed paddle should be con-
nected directly to the ground plane similar to that
shown. A sufficient number of via holes should be
used to connect the top and bottom ground planes.
The evaluation board should be mounted to an
appropriate heat sink. The evaluation circuit board
shown is available from Hittite upon request.
List of Materials for Evaluation PCB 104991 [1]
Item Description
J1 - J2 PCB Mount SMA RF Connector
J3 2 mm DC Header
C1 - C3 330 pF Capacitor, 0603 Pkg.
C4 1.2 pF Capacitor, 0603 Pkg.
C5 2 pF Capacitor, 0402 Pkg.
C6 2.2 μF Capacitor, Tantalum
L1 3 nH Inductor, 0805 Pkg.
R1 130 Ohm Resistor, 0603 Pkg.
U1 HMC327MS8G(E) Ampli er
PCB [2] 104829 Eval Board
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
HMC327MS8G / 327MS8GE
v05.0509
GaAs InGaP HBT MMIC
1/2 WATT POWER AMPLIFIER, 3 - 4 GHz
