NJG1142KA1 - New Japan Radio Co., Ltd.

NJG1142KA1

- 1 -

Ver.2012-02-23

WIDE BAND LOW NOISE AMPLIFIER GaAs MMIC





 GENERAL DESCRIPTION





 PACKAGE OUTLINE

The NJG1142KA1 is a wide band low noise amplifier GaAs MMIC

designed for mobile TV application. And this amplifier can be tuned to

wide frequency (170MHz~900MHz).

The NJG1142KA1 has a LNA pass-through function to select high

gain mode or low gain mode by low control voltage operation.

The

NJG1142KA1 features low current consumption, high linearity.

An ultra-small and ultra-thin package of FLP6-A1

is adopted.





 FEATURES

 Wide operating frequency range 170MHz~900MHz

 Low voltage operation +2.8V/+1.8V typ.

[High gain mode]

 Low current consumption 6mA typ. @Vdd=2.8V

 High gain +14.0dB typ. @Vdd=2.8V

 Low noise figure 1.5dB typ. @Vdd=2.8V



High P

-0.1dB

Compression

0dBm typ. @Vdd=2.8V



High

input IP3 +2.0dBm typ. @Vdd=2.8V

[Low gain mode]

 Low current consumption

11µA

typ. @Vdd=2.8V



Gain (Low loss)

-1.0dB

typ. @Vdd=2.8V



High P

-0.1dB

Compression

+17dBm

typ. @Vdd=2.8V



High

input IP3 +22.0dBm typ. @Vdd=2.8V

 External components count 3 pcs. (capacitor: 2pcs, inductor: 1pc)

 Small package size FLP6-A1 (package size: 1.6mm x 1.6mm x 0.55mm typ.)

 RoHS compliant and Halogen Free





 PIN CONFIGURATION





 TRUTH TABLE

V

CTL

LNA Mode

H High Gain Mode

L Low Gain Mode

NOTE: The information on this datasheet is subject to change without notice

NJG1142KA1







PIN CONNECTION

1. VCTL

2. GND

3. RFOUT

4. GND

5. GND

6. RFIN

(Top View)

3

4

5

6

2

1

RFIN

RFOUT

VCTL

GND

Logic

circuit

Bias

circuit

1Pin INDEX

“H” = V

CTL(H)

“L” = V

CTL(L)

NJG1142KA1

- 2 -





 ABSOLUTE MAXIMUM RATINGS

T

a

=+25°C, Z

s

=Z

l

=50 ohm

PARAMETER SYMBOL

CONDITIONS RATINGS UNITS

Supply voltage

V

DD

5.0 V

Control voltage

V

CTL

5.0 V

Input power

P

IN

V

DD

=2.8V +15 dBm

Power dissipation P

D

4-layer FR4 PCB with through-hole

(74.2mmx74.2mm), T

j

=150°C 580 mW

Operating temperature

T

opr

-40~+85 °C

Storage temperature

T

stg

-55~+150 °C





 ELECTRICAL CHARACTERISTICS 1

DC CHARACTERISTICS

General conditions: V

DD

=2.8V, T

a

=+25°C, Z

s

=Z

l

=50 ohm, with application circuit

PARAMETERS SYMBOL

CONDITIONS MIN TYP MAX

UNITS

Operating voltage V

DD

2.3 2.8 3.6 V

Control voltage (High)

V

CTL(H)

1.3 1.8 3.6 V

Control voltage (Low)

V

CTL(L)

0.0 0.0 0.5 V

Operating current1

I

DD1

RF OFF, V

CTL

=1.8V - 6.0 9.5 mA

Operating current2

I

DD2

RF OFF, V

CTL

=0V - 11.0 25.0 µA

Control current

I

CTL

RF OFF, V

CTL

=1.8V - 6.0 10.0 µA

NJG1142KA1

- 3 -





 ELECTRICAL CHARACTERISTICS 1

RF CHARACTERISTICS1 (High Gain Mode)

Conditions: V

DD

=2.8V, V

CTL

=1.8V, f

RF

=170~900MHz, T

a

=+25°C, Z

s

=Z

l

=50ohm, with application circuit

PARAMETERS SYMBOL

CONDITIONS MIN TYP MAX

UNITS

Small signal gain1

Gain1 Exclude PCB, connector

losses*1 11.0 14.0 18.0 dB

Noise figure1 NF1 Exclude PCB & connector

losses

*2

- 1.5 1.9 dB

Input power 1dB gain

compression1

P

-1dB(IN)

1

-5.0 0.0 - dBm

Input 3rd order

intercept point1

IIP3_1 f1=f

RF

, f2=f

RF

+100kHz,

P

IN

=-26dBm -3.0 +2.0 - dBm

Isolation1 ISL1 Exclude PCB & connector

losses

*1

- -19 - dB

RF IN VSWR1

VSWRi1

- 1.5 2.3 -

RF OUT VSWR1

VSWRo1

- 1.5 2.2 -

*

1 Input & output PCB and connector losses:

0.035dB(at 170MHz), 0.088dB(620MHz), 0.120dB(at 900MHz)

*2

Input PCB and connector losses:

0.018dB(170MHz), 0.044dB(620MHz), 0.060dB(900MHz)





 ELECTRICAL CHARACTERISTICS 1

RF CHARACTERISTICS2 (Low Gain Mode)

Conditions: V

DD

=2.8V, V

CTL

=0V, f

RF

=170~900MHz, T

a

=+25°C, Z

s

=Z

l

=50ohm, with application circuit

PARAMETERS SYMBOL

CONDITIONS MIN TYP MAX

UNITS

Small signal gain2

Gain2

Exclude PCB & connector

losses*1

-2.5 -1.0 - dB

Input power at 1dB gain

compression2

P

-1dB(IN)

2

+14.0

+17.0

- dBm

Input 3rd order

intercept point2

IIP3_2 f1=f

RF

, f2=f

RF

+100kHz,

P

IN

=-8dBm +17.0

+22.0

- dBm

RF IN VSWR2

VSWRi2

- 1.5 2.0 -

RF OUT VSWR2

VSWRo2

- 1.5 2.0 -

*

1 Input & output PCB and connector losses:

0.035dB(at 170MHz), 0.088dB(620MHz), 0.120dB(at 900MHz)

NJG1142KA1

- 4 -





 ELECTRICAL CHARACTERISTICS 2

DC CHARACTERISTICS

General conditions: V

DD

=1.8V, T

a

=+25°C, Z

s

=Z

l

=50 ohm, with application circuit

PARAMETERS SYMBOL

CONDITIONS MIN TYP MAX

UNITS

Operating voltage V

DD

- 1.8 - V

Control voltage (High)

V

CTL(H)

- 1.8 - V

Control voltage (Low)

V

CTL(L)

- 0.0 - V

Operating current1

I

DD1

RF OFF, V

CTL

=1.8V - 4.2 - mA

Operating current2

I

DD2

RF OFF, V

CTL

=0V - 6.4 - µA

Control current

I

CTL

RF OFF, V

CTL

=1.8V - 5.6 - µA





 ELECTRICAL CHARACTERISTICS 2

RF CHARACTERISTICS1 (High Gain Mode)

Conditions: V

DD

=1.8V, V

CTL

=1.8V, f

RF

=170~900MHz, T

a

=+25°C, Z

s

=Z

l

=50ohm, with application circuit

PARAMETERS SYMBOL

CONDITIONS MIN TYP MAX

UNITS

Small signal gain1

Gain1 Exclude PCB, connector

losses*1 - 12.1 - dB

Noise figure1 NF1 Exclude PCB & connector

losses

*2

- 1.75 - dB

Input power 1dB gain

compression1

P

-1dB(IN)

1

- -1.6 - dBm

Input 3rd order

intercept point1

IIP3_1 f1=f

RF

, f2=f

RF

+100kHz,

P

IN

=-26dBm - +2.0 - dBm

Isolation1 ISL1 Exclude PCB & connector

losses

*1

- -18.4

- dB

RF IN VSWR1

VSWRi1

- 1.67 - -

RF OUT VSWR1

VSWRo1

- 1.96 - -

*1 Input and output PCB, connector losses :

0.035dB(at 170MHz), 0.088dB(at 620MHz), 0.120dB(at 900MHz)

*2 Input PCB, connector losses :

0.018dB(at 170MHz), 0.044dB(at 620MHz), 0.060dB(at 900MHz)

NJG1142KA1

- 5 -





 ELECTRICAL CHARACTERISTICS 2

RF CHARACTERISTICS2 (Low Gain Mode)

Conditions: V

DD

=1.8V, V

CTL

=0V, f

RF

=170~900MHz, T

a

=+25°C, Z

s

=Z

l

=50ohm, with application circuit

PARAMETERS SYMBOL

CONDITIONS MIN TYP MAX

UNITS

Small signal gain2

Gain2

Exclude PCB & connector

losses*1

- -1.1 - dB

Input power at 1dB gain

compression2

P

-1dB(IN)

2

- +18.9

- dBm

Input 3rd order

intercept point2

IIP3_2 f1=f

RF

, f2=f

RF

+100kHz,

P

IN

=-8dBm - +24.0

- dBm

RF IN VSWR2

VSWRi2

- 1.33 - -

RF OUT VSWR2

VSWRo2

- 1.15 - -

*1 Input and output PCB, connector losses :

0.035dB(at 170MHz), 0.088dB(at 620MHz), 0.120dB(at 900MHz)





TERMINAL INFORMATION

No. SYMBOL

DESCRIPTION

1 VCTL Control voltage supply terminal.

2 GND Ground terminal. These terminals should be connected to the

ground plane as close as possible for excellent RF performance.

3 RFOUT

RF output terminal. This terminal is also the power supply terminal

of the LNA. please use inductor (L1) to connect power supply.

4 GND Ground terminal. These terminals should be connected to the

ground plane as close as possible for excellent RF performance.。

5 GND Ground terminal. These terminals should be connected to the

ground plane as close as possible for excellent RF performance.

6 RFIN RF input terminal. This IC is integrated an input DC blocking

capacitor.

NJG1142KA1

- 6 -





 ELECTRICAL CHARACTERISTICS (High Gain Mode)

(Condition :Ta=+25℃, V

DD

=2.8V, V

CTL

=1.8V, Zs=Zl=50ohm, with application circuit)

-40

-30

-20

-10

0

10

20

-40 -30 -20 -10 0 10

Pout (dBm)

Pin (dBm)

P-1dB(IN)=0dBm

Pout

Pout vs. Pin

(freq=620MHz)

6

8

10

12

14

16

0

10

20

30

40

50

-40 -30 -20 -10 0 10

Gain (dB)

I

DD

(mA)

Pin (dBm)

Gain

I

DD

Gain, I

DD

vs. Pin

(freq=620MHz)

P-1dB(IN)=0dBm

-100

-80

-60

-40

-20

0

20

-40 -30 -20 -10 0 10 20

Pout, IM3 (dBm)

Pin (dBm)

Pout

IM3

Pout, IM3 vs. Pin

(f1=620MHz, f2=f1+100kHz)

IIP3=+2.4dBm

0

0.5

1

1.5

2

2.5

3

3.5

4

0

2

4

6

8

10

12

14

16

0 500 1000 1500 2000

Noise Figure (dB)

Gain (dB)

frequency (MHz)

NF

Gain

NF, Gain vs. frequency

(freq=50~2000MHz)

(Exclude PCB, Connector Losses)

0

5

10

15

20

0 500 1000 1500 2000

IIP3, OIP3 vs. frequency

(f1=50~2000MHz, f2=f1+100kHz, Pin=-26dBm)

IIP3, OIP3 (dBm)

frequency (MHz)

OIP3

IIP3

-10

-5

0

5

10

0 500 1000 1500 2000

P-1dB(IN) vs. frequency

(freq=50~2000MHz)

P-1dB(IN) (dBm)

frequency (MHz)

NJG1142KA1

- 7 -





 ELECTRICAL CHARACTERISTICS (High Gain Mode)

(Condition :Ta=+25℃, V

CTL

=1.8V, Zs=Zl=50ohm, with application circuit)

0

0.5

1

1.5

2

2.5

3

3.5

4

0

2

4

6

8

10

12

14

16

1.5 2.0 2.5 3.0 3.5 4.0 4.5

Noise Figure (dB)

Gain (dB)

V

DD

(V)

NF

Gain

NF, Gain vs. V

DD

(freq=620MHz)

(Exclude PCB, Connector Losses)

0

5

10

15

20

1.5 2.0 2.5 3.0 3.5 4.0 4.5

IIP3, OIP3 vs. V

DD

(f1=620MHz, f2=f1+100kHz, Pin=-26dBm)

IIP3, OIP3 (dBm)

V

DD

(V)

OIP3

IIP3

1

1.5

2

2.5

3

1.5 2.0 2.5 3.0 3.5 4.0 4.5

VSWR vs. V

DD

(freq=620MHz)

VSWR

V

DD

(V)

VSWRo

VSWRi

0

2

4

6

8

10

1.5 2.0 2.5 3.0 3.5 4.0 4.5

I

DD

vs. V

DD

(RF OFF)

I

DD

(mA)

V

DD

(V)

-10

-5

0

5

10

1.5 2.0 2.5 3.0 3.5 4.0 4.5

P-1dB(IN) vs. V

DD

(freq=620MHz)

P-1dB(IN) (dBm)

V

DD

(V)

-30

-25

-20

-15

-10

-5

0

1.5 2.0 2.5 3.0 3.5 4.0 4.5

Isolation vs. V

DD

(freq=620MHz)

Isolation (dB)

V

DD

(V)

NJG1142KA1

- 8 -

 ELECTRICAL CHARACTERISTICS (High Gain Mode)

(Condition : V

DD

=2.8V, V

CTL

=1.8V, Zs=Zl=50ohm, with application circuit)

0

0.5

1

1.5

2

2.5

3

3.5

4

0

2

4

6

8

10

12

14

16

-40 -20 0 20 40 60 80 100

Noise Figure (dB)

Gain (dB)

Temperature (

o

C)

NF

Gain

NF, Gain vs. Temperature

(freq=620MHz)

(Exclude PCB, Connector Losses)

-10

-5

0

5

10

-40 -20 0 20 40 60 80 100

P-1dB(IN) vs. Tempareture

(freq=620MHz)

P-1dB(IN) (dBm)

Tempareture (

o

C)

0

5

10

15

20

-40 -20 0 20 40 60 80 100

IIP3, OIP3 vs. Temperature

(f1=620MHz, f2=f1+100kHz, Pin=-26dBm)

IIP3, OIP3 (dBm)

Temperature (

o

C)

OIP3

IIP3

1

1.5

2

2.5

3

-40 -20 0 20 40 60 80 100

VSWR vs. Temperature

(freq=620MHz)

VSWR

Temperature (

o

C)

VSWRo

VSWRi

0

2

4

6

8

10

0

5

10

15

20

25

-40 -20 0 20 40 60 80 100

I

DD

(mA)

I

CTL

(µ

µ

µA)

Temperature (

o

C)

I

DD

I

CTL

I

DD

, I

CTL

vs. Temperature

(RF OFF)

-30

-25

-20

-15

-10

-5

0

-40 -20 0 20 40 60 80 100

Isolation vs. Temperature

(freq=620MHz)

Isolation (dB)

Temperature (

o

C)

NJG1142KA1

- 9 -





 ELECTRICAL CHARACTERISTICS(High Gain Mode)

(Condition :Ta=+25℃, V

DD

=2.8V, V

CTL

=1.8V, Zs=Zl=50ohm, with application circuit)

S11, S22 S21, S12

Zin, Zout VSWRi, VSWRo

NJG1142KA1

- 10 -





 ELECTRICAL CHARACTERISTICS (High Gain Mode)

(Condition :Ta=+25℃, V

DD

=2.8V, V

CTL

=1.8V, Zs=Zl=50ohm, with application circuit)

S21, S12 (50MHz~20GHz)

S11, S22 (50MHz~20GHz)

0

5

10

15

20

0.0 5.0 10 15 20

K factor vs. frequency

(freq=50MHz~20GHz)

-40

o

C

-20

o

C

0

o

C

+25

o

C

+60

o

C

+85

o

C

K factor

frequency (GHz)

NJG1142KA1

- 11 -





 ELECTRICAL CHARACTERISTICS (Low Gain Mode)

(Condition :Ta=+25℃, V

DD

=2.8V, V

CTL

=0V, Zs=Zl=50ohm, with application circuit)

-40

-30

-20

-10

0

10

20

-40 -30 -20 -10 0 10 20 30

Pout (dBm)

Pin (dBm)

P-1dB(IN)=+22.2dBm

Pout

Pout vs. Pin

(freq=620MHz)

-10

-8

-6

-4

-2

0

10

20

30

40

50

-40 -30 -20 -10 0 10 20 30

Gain (dB)

I

DD

(

µ

A)

Pin (dBm)

Gain

I

DD

Gain, I

DD

vs. Pin

(freq=620MHz)

P-1dB(IN)=22.2dBm

-100

-80

-60

-40

-20

0

20

40

-30 -20 -10 0 10 20 30

Pout, IM3 (dBm)

Pin (dBm)

Pout

IM3

Pout, IM3 vs. Pin

(f1=620MHz, f2=f1+100kHz)

IIP3=+23.8dBm

-10

-8

-6

-4

-2

0

0 500 1000 1500 2000

Gain vs. frequency

(freq=50~2000MHz)

Gain (dB)

frequency (MHz)

10

15

20

25

30

0 500 1000 1500 2000

IIP3, OIP3 vs. frequency

(f1=50~2000MHz, f2=f1+100kHz, Pin=-8dBm)

IIP3, OIP3 (dBm)

frequency (MHz)

OIP3

IIP3

5

10

15

20

25

0 500 1000 1500 2000

P-1dB(IN) vs. frequency

(freq=50~2000MHz)

P-1dB(IN) (dBm)

frequency (MHz)

NJG1142KA1

- 12 -





 ELECTRICAL CHARACTERISTICS (Low Gain Mode)

(Condition :Ta=+25℃, V

CTL

=0V, Zs=Zl=50ohm, with application circuit)

-5

-4

-3

-2

-1

0

1.5 2.0 2.5 3.0 3.5 4.0 4.5

Gain vs. V

DD

(freq=620MHz)

Gain (dB)

V

DD

(V)

10

15

20

25

30

1.5 2.0 2.5 3.0 3.5 4.0 4.5

IIP3, OIP3 vs. V

DD

(f1=620MHz, f2=f1+100kHz, Pin=-8dBm)

IIP3, OIP3 (dBm)

V

DD

(V)

OIP3

IIP3

1

1.2

1.4

1.6

1.8

2

1.5 2.0 2.5 3.0 3.5 4.0 4.5

VSWR vs. V

DD

(freq=620MHz)

VSWR

V

DD

(V)

VSWRo

VSWRi

0

5

10

15

20

25

30

1.5 2.0 2.5 3.0 3.5 4.0 4.5

I

DD

vs. V

DD

(RF OFF)

I

DD

(

µ

A)

V

DD

(V)

5

10

15

20

25

1.5 2.0 2.5 3.0 3.5 4.0 4.5

P-1dB(IN) vs. V

DD

(freq=620MHz)

P-1dB(IN) (dBm)

V

DD

(V)

NJG1142KA1

- 13 -





 ELECTRICAL CHARACTERISTICS (Low Gain Mode)

(Condition : V

DD

=2.8V, V

CTL

=0V, Zs=Zl=50ohm, with application circuit)

-5

-4

-3

-2

-1

0

-40 -20 0 20 40 60 80 100

Gain vs. Temperature

(freq=620MHz)

Gain (dB)

Temperature (

o

C)

5

10

15

20

25

-40 -20 0 20 40 60 80 100

P-1dB(IN) vs. Tempareture

(freq=620MHz)

P-1dB(IN) (dBm)

Tempareture (

o

C)

10

15

20

25

30

-40 -20 0 20 40 60 80 100

IIP3, OIP3 vs. Temperature

(f1=620MHz, f2=f1+100kHz, Pin=-8dBm)

IIP3, OIP3 (dBm)

Temperature (

o

C)

OIP3

IIP3

1

1.2

1.4

1.6

1.8

2

-40 -20 0 20 40 60 80 100

VSWR vs. Temperature

(freq=620MHz)

VSWR

Temperature (

o

C)

VSWRo

VSWRi

0

5

10

15

20

25

30

-40 -20 0 20 40 60 80 100

I

DD

vs. Temperature

(RF OFF)

I

DD

(

µ

A)

Temperature (

o

C)

0

1

2

3

4

5

6

7

8

0.0 0.5 1.0 1.5 2.0 2.5 3.0

I

DD

vs. V

CTL

(RF OFF)

-40

o

C

-20

o

C

0

o

C

+25

o

C

+60

o

C

+85

o

C

I

DD

(mA)

V

CTL

(V)

NJG1142KA1

- 14 -





 ELECTRICAL CHARACTERISTICS (Low Gain Mode)

(Condition :Ta=+25℃, V

DD

=2.8V, V

CTL

=0V, Zs=Zl=50ohm,with application circuit)

S11, S22 S21, S12

Zin, Zout VSWRi, VSWRo

NJG1142KA1

- 15 -





 ELECTRICAL CHARACTERISTICS (Low Gain Mode)

(Condition :Ta=+25℃, V

DD

=2.8V, V

CTL

=0V, Zs=Zl=50ohm,With application circuit)

S21, S12 (50MHz~20GHz) S11, S22 (50MHz~20GHz)

0

5

10

15

20

0.0 5.0 10 15 20

K factor vs. frequency

(freq=50MHz~20GHz)

-40

o

C

-20

o

C

0

o

C

+25

o

C

+60

o

C

+85

o

C

K factor

frequency (GHz)

NJG1142KA1

- 16 -





 APPLICATION CIRCUIT





 TEST PCB LAYOUT





 PARTS LIST

Parts ID. Notes

L1 TAIYO-YUDEN

HK1005 Series

C1, C2 MURATA

GRM15 Series

PCB (FR-4):

t=0.2mm

MICROSTRIP LINE WIDTH

=0.40mm (Z

0

=50Ω)

PCB SIZE=16.8mm x 16.8mm

PRECAUTION:

・ In order not to couple with terminal RFIN and RFOUT, please layout ground pattern under the IC.

(Top View)

RF IN

V

CTL

RF OUT

V

DD

L1

270nH

C1

330pF

C2

1000pF

RFOUT

3

4

5

6

2

1

RFIN

RFOUT

VCTL

GND

Logic

circuit

Bias

circuit

1Pin INDEX

(Top View)

V

DD

RF IN

RF OUT

L1

C1

C2

1Pin INDEX

V

CTL

NOTES:

・ L1 is an RF choke. (DC feed inductor)

・ C1 is a coupling and DC blocking capacitor at the output.

・

C2 is a bypass capacitor.

NJG1142KA1

- 17 -





 MEASUREMENT BLOCK DIAGRAM

●S parameter Measurements

●IIP3 Measurements

S parameter Measurement Block Diagram

RF OUT

V

DD

RF IN

DUT

Network

Analyzer

Port 1

Port 2

IF and IM3 Measurement Block Diagram for IIP3（High Gain Mode）

RF OUT

RF IN

Signal

Generator

freq.1

freq.2

2dB

Attenuator

2dB

Attenuator

Power

Comb.

V

DD

DUT

Signal

Generator

3dB

Attenuator

Spectrum

Analyzer

3dB

Attenuator

RF OUT

RF IN

Spectrum

freq.1

2dB

Attenuator

RF

Amp

.

V

DD

DUT

Signal

Generator Analyzer

2dB

6dB

Attenuator

10dB

Attenuator

IF and IM3 Measurement Block Diagram for IIP3（Low Gain Mode）

NJG1142KA1

- 18 -

● Noise Figure Measurements

Calibration Setup

Noise Source

(Agilent 346A)

NF Analyzer

(Agilent 8973A)

Input (50Ω)

Noise Source

Drive Output

* Noise source and NF analyzer

are connected directly.

Measurement Setup

Noise Source

(Agilent 346A)

NF Analyzer

(Agilent 8973A)

Input (50Ω)

Noise Source

Drive Output

* Noise source and DUT, DUT and

NF analyzer are connected directly.

DUT

In out

Measuring instruments

NF Analyzer : Agilent 8973A

Noise Source : Agilent 346A

Setting the NF analyzer

Measurement mode form

Device under test : Amplifier

System downconverter : off

Mode setup form

Sideband : LSB

Averages : 8

Average mode : Point

Bandwidth : 4MHz

Loss comp : off

Tcold : setting the temperature of noise source (300.0K)

NJG1142KA1

- 19 -





 PACKAGE OUTLINE (FLP6-A1)

Caution

s

on using

this

product

This product contains Gallium-Arsenide (GaAs) which is a harmful material.

• Do NOT eat or put into mouth.

• Do NOT dispose in fire or break up this product.

• Do NOT chemically make gas or powder with this product.

•

To

wast

e

th

is

product, please obey the relati

ng

law

of

your

country.

This product may be damaged with electric static discharge (ESD) or spike voltage. P

lease

hand

le with care to avoid these damages

.

[CAUTION]

The specifications on this databook are only

given for information , without any guarantee

as regards either mistakes or omissions.

The application circuits in this databook are

described only to show representative

usages of the product and not intended for

the guarantee or permission of any right

including the industrial rights.

1.6 0.05

1.2 0.05

0.5 0.5

0.55 0.05

0.10.1

0.22 0.05

0.13 0.05

0.2 0.10.2 0.1

Unit: mm