3875081. ry OL DE 3875081 0018374 & O1E 18374 9D T-39-11 Stanaara rower MOSFETs File Number 1581 IRF820, IRF821, IRF822, IRF823 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 2.0A and 2.5A, 450V-500V Mos(On) = 3.09 and 4.09 Features; SOA is power-dissipalion limited Nanosecond switching speeds m Linear transfer characteristics = High input impedance Majority carrier device The IRF&20, IRF821, IRF822 and IRF823 are n-channel enhancement-mode silicon-gate power field- effect transistors designed for applications such as switch- ing regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching tran- sistors requiring high speed and low gate-drive power. These types can be operated directly from integrated circuits. The IRF-types are supplied in the JEDEC TO-220AB plastic package. Absolute Maximum Ratings Drain. Source Curent Crain Pulsed Orain Gate- Linear Factor Inductive Current, Clampad Storege lead Range N-CHANNEL ENHANCEMENT MODE s 9208-33741 TERMINAL DIAGRAM TERMINAL DESIGNATION SOURCE DRAIN O To GATE B2CS-30576 VIEW JEDEC TO-220AB iRFA21 4s0 (AF823 (See Fig. 15 19 -5 to 180 in. 41 trom case for 10s} 3173875081 GE SOLID STATE OL DEY} 3875081 0018375 4 | Standard Power MOSFETs IRF820, IRF821, IRF822, IRF823 Electrical Characteristics @Tc = 25C (Unless Otherwise Specified) Parameter Type Min. Typ. | Max. Units Test Conditrons 8Voss Drain. Sowce Breakdown Voltage IAF820 . . > inrazz | SO | - v Vos - Ov : inFB21 IRF823 450 ~ : v Ip + 250nA Vosishy Gate Threshold Voltage ALL 2.0 40 v Vos + Vgs. ip = 250uA toss ___ Gate-Source Leakage Forward ALL ~ -_| 500 nA Vag 2 20V iggg _ Gate-Source Leakage Reverse ALL = ~_ | -500 nA Vas + -20V loss Zero Gate Voltage Orain Current ALL ~ 250 BA Vos + Mas. Rating, Vgg + OV = = 1000 BA Vos Mar. Rating x 0.8, Yos = OV,Te = 125C . Ipton) On State Drain Current @ (AFB20 - jon! 25 ~ - A 'RFO21 Vos?! R Vgs = 104 DS 7 'Ofon) * "DSton} max YGS } (RFO22 Fo og | | . A iara2z3 | 7 Roston} Static Drain-Source On-State IRF820 _ on) existance trra21 26 | 30) 2 Vee = 10V.lp LOA mre22 | bag | ao | a Gs sia = IRFO23 * is Forward Tansconductance @ ALL 1.0 [175] - | sin Vps "o1on) Posten) mane (p= TOA Cigs Input Capacuiance ALL = 300 | 400 oF Vgg OV, Ypg = 25V,0 = 1.0MHz Coss Output Capacitance ALL = 75 180 oF SeeFig 10 Ciss Revatse Transfer Capacitance ALL - 20 40 oF tyony__ Turn-On Delay Tune ALL = 3o_[ 80 ns Voo * 0-5 BVpgs- Ip = 1.00.2, S07 a Rise Tune ALL 25 | 50 ns See Fig. 17 {golf} Tuin-Oit Delay Time ALL - 30 60 ns (MOSFET switching times are assantially i Fall time ALL ~ 15 30 rs independant of operating temperature ) a, Tota! Gate Charge vi = 10V, Ip 3.0A, Voc = 0.8 Max. Ratin 9 ~ 1" GS 0 0 9 (Gate-Source Ptus Gate Drain) atl 18 nc SeeFig 18 for test circuit. (Gate charge is essentisty Qos Gate-Source Charge ALL = 5.0 _ nC indapandent of opetating temperature.) O94 Gate-Deain ('Matlec"] Charge ALL ~ 6.0 - nc lp Infernal Drain Inductance - 3.6 ~ aH Measured from the Modified MOSFET contact screw on tab symbol showing the to center of die. internal device ALL ~- 45 - nH Measured from the drain lead, 6mm (0.25 . in) from package to center of dia. w ls Internal Source Inductance ALL - 76 = nH Measured from the source lead, 6mm S is 10.25 in.) fram package to source $ bonding pad. Thermal Resistance Rinse Junction to Case ALL - Jan] cw Rucs _Case-to-Sink ALL 1.0 - cw Mounting surface flat, smooth, and greased, Ainja Junction to-Ambient ALL - - 80 cw Fiee Aw Operation Source-Drain Diode Ratings and Characteristics Is Continuous Source Current IAF620 . _ 2.5 A Modified MOSFET symbol (Body Diode) IRFB21 shawing tha intagral IRF822 traverse P-N function rectifier inraza | ~ | ~ | 294 4 tsa Pulse Source Current IRFB20 (ody Diode) D inrezi | ~ | ~ | 10 A G IRF822 inraza | ~ {| | 2 | A Vso Diode Forward Voltage @ men - - | 16 v Tg = 25C, 1g = 2.58, Vgg = OV naga | - Pc Te = 25C, ts = 2.08, Vgg = OV th Reverse Recovery Tuo ALL - | oof, ns Ty = 150C, ip 2.58, dildt = 100Als Qpa Reverse Ascovered Charge ALL = 3.5 - aC Ty = 150C, Ip = 2.5A, digidt = 100 Ais lon Forward Tun on Time ALL {intrinsic turn on time is negligible, Turn-on speed is substantially controlled by ls +p Ty = 25C 10 150*C, @) Pulse Test: Pulse width 300us, Duty Cycte < 2%. @ Repotitive Rating: Pulse width limited by max junction temperature See Transient Thermal impedance Curve iFig. 5). 3183876081 G E SOLID state OL DEP 3875081 0018376 O i> T-39-11 Standard Power MOSFETs Zinsclt Anse, NORMALIZED EFFECTIVE TRANSIENT THEAMAL IMPEDANCE (PER UNIT} IRF820, IRF821, IRF822, IRF823 r a 3 i 3 <3 = & z z 5 5 3 . =? z i = <a = s Ty = 25C 3 s : 1 o 50 100 1s0 200 150 2 4 6 8 10 Vos. ORAIN TO SOURCE VOLTAGE [VOLTS} Vgs. GATE 10 SOURCE VOLTAGE (VOLTS? Fig, 1 ~ Typical Output Characteristics Fig. 2 Typical Transfer Characteristics 5 co OPERATION IN THIS 2 AREAIS LIMITED 10 g 2 2 woos =z = <3 z = B 2 a 2 s s 3 3B 19 z? = & os 5 3 2 - = 2500 1 02 ;-Ty= 6000 MAX Finyg #9 12 ec -w OL OSINGLE PULSE 05 8 8 2 16 20 Yo 2 a er Vos. ORAIN TO SOURCE VOLTAGE (VOLTS) Vog. GAAIN-TO SOURCE VOLTAGE (VOLTS} Fig. 4 Maximum Safe Operating Area Fig, 3 Typical Saturation Characteristics 1 0s 02 fam T 0 al beat ad 1 puty actor,o+ WL, PULSE a 00 THE AMAL IMPEDANCE} 2. PER UNIT BASE = Fynic * 3:12 0EG. CW, 2 Tya-Te Pom 2unucltl ool iS 2) SOA $6 (UOC $y? $s wt 2 5 iy? 5 fl Uy, SQUARE WAVE PULSE DURATION (SECONDS) Fig. 5 Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration 319ath 3875081 GE SOLip state 1 pe Bf sazsoaa o0na377 1 T-39-11 Standard Power mMUoreis IRF820, IRF821, IRF822, IRF823 04,- TRANSCONDUCTANCE {SIEMANS} Ing. REVERSE ORAIN CURRENT (aMPEAES} 6 1 z 3 4 5 8 0 2 3 4g, DRAIN CURRENT [AMPERES} Vo. SOURCE-TO DRAIN VOLTAGE (VOLTS) Fig. 6 Typical Transconductance Vs. Drain Current Fig, 7 Typical Source-Drain Diode Forward Voltage 135 36 - = & z az {NORMALIZEO) = 3 = BR Ros (an), ORAIN TO SQUACE GN RESISTANCE ee BVpsg, DRAIN-TO-SOURCE BREAKOOWN VOLTAGE (NORMALIZED) 0.95 02 40 0 40 0 120 160 40 0 40 0 120 160 Ty JUNCTION TEMPERATURE {C} Ty, JUNCTION TEMPERATURE (C} Fig, 8 Breakdown Voltage Vs. Temperature Fig. 9 Normalized On-Rasistance Vs. Temperature Vg5*o ts tMHr - 100V. Can = Cyt Cys, Ca Cre = Cod Ce C, Com" Coe ood Cds # Cog am Lol Vog * 250 I U Vos 4d0v, 1nF&20, 622 3 C, CAPACITANCE (pF} o Vgs. GATE-TO SOURCE VOLTAGE (VOLTS) ig 3A FOR TEST CIRCUIT FIGURE Coss 6 10 20 FE) 0 50 0 8 W 6 20 Vos. ORAIN-TO SOURCE VOLTAGE (VOLTS} Oy TOTAL GATE CHAAGE InC} Fig. 10 Typical Capacitance Vs. Drain-to-Source Voltage Fig, 11 Typical Gate Charge Vs. Gate-to-Source Voltage 320 3875081 GE socio state Uh pe zs7soa1 on1saza 3 7-39-11 ownaard Power MOSFETs ~ i o ~ - . Aipsten)- ORAIN-TO-SOURCE ON RESISTANCE (OHMS) 7 e 2 4 6 a 10 Tg, GRAIN CURRENT {AMPERES) Fig. 12 Typical On-Rasistance Vs, Drain Current ot) % Po. POWER DISSIPATION (WATTS) 3 a 0 Poston} CUARENT OF 2Bus DURATION. INITIAL Ty 25C, (HEATING oF ts IRF820, IRF821, IRF822, IRF823 URFG20, 821 Ip, DRAIN CURRENT (AMPERES) 4 6 0 5 10 125 150 To, CASE TEMPERATURE {OC} Fig. 13 Maximum Drain Current Vs, Case Temperature a) cu w 100 no | 140 Tc, CASE TEMPERATURE (C) Fig. 14 Power Vs. Temperature Darating Curve VAAY ty 10 O8TAIN ALQUIAED PEAK I, af | our Vos +2 " 4 Fig. 15 Clamped Inductive Tast Circult Ey + R5EVo 55 Vp +0 158Vgs5 ADJUST AL TO O8TAIN SPECIFIED tg % PULSE 9 GENERATOR OUT, r TO SCOPE oon HIGH FREQUENCY SHUNT Fig. 17 Switching Time Test Circuit Fig, 16 Clamped Inductive Waveforms o os {ISOLATED SUPPLY CURRENT REGULATOR SAME TYPE as out 1 oda nv GATTEAY (0 CURRENT SHUNT 'e CURRENT = SHUNT Fig. 18 Gate Charge Test Circuit 324