Features
150oC Junction Temperature
Mechanical Data
Case: TO-92, Molded Plastic
Polarity: indicated as below.
Maximum Ratings @ 25oC Unless Otherwise Specified
Charateristic Symbol Value Unit
Collector-Emitter Volta
g
e BC55
6
BC557
BC55
8
VCEO
-65
-45
-30
V
Collector-Base Volta
g
e BC55
6
BC557
BC55
8
VCBO
-80
-50
-30
V
Emitter-Base Voltage VEBO -5.0 V
Collector Current(DC) IC-100 mA
Power Dissipation@TA
=25oCPd
625
5.0
mW
mW/ oC
Power Dissipation@TC
=25oCPd
1.5
12
W
mW/ oC
Thermal Resistance, Junction to
Ambient Air 200 oC/W
Thermal Resistance, Junction to
Case 83.3 oC/W
Operating & Storage Temperature T
j
,T
STG -55~150 oC
BC556,B
BC557,A,B,C
BC558,B
PNP Silicon
Amplifier Transistor
625mW
RJC
RJA
Revision: D 2013/01/01
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20736 Marilla Street Chatsworth
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Through Hole Package
Marking:Type Number
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .175 .185 4.45 4.70
B .175 .185 4.45 4.70
C .500 --- 12.70 ---
D .016 .020 0.41 0.63
E .135 .145 3.43 3.68
.095.1052.422.67 Straight Lead
AE
B
C
D
G
CBE
CBE
BENT LEADSTRAIGHT LEAD
BULK PACK AMMO PACK
* For ammo packing detailed specification, click here to visit our website
of product packaging for details.
.173.2204.405.60 Bent Lead
G
TO-92
DIMENSIONS
Halogen free available upon request by adding suffix "-HF"
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
(IC = –2.0 mAdc, IB = 0) BC556
BC557
BC558
V(BR)CEO –65
–45
–30
V
CollectorBase Breakdown Voltage
(IC = –100 µAdc) BC556
BC557
BC558
V(BR)CBO –80
–50
–30
V
EmitterBase Breakdown Voltage
(IE = –100 Adc, IC = 0) BC556
BC557
BC558
V(BR)EBO –5.0
–5.0
–5.0
V
ON CHARACTERISTICS
DC Current Gain
(IC = –10 µAdc, VCE = –5.0 V) BC557A
BC556B/557B/558B
BC557C
(IC = –2.0 mAdc, VCE = –5.0 V) BC556
BC557
BC558
BC557A
BC556B/557B/558B
BC557C
(IC = –100 mAdc, VCE = –5.0 V) BC557A
BC556B/557B/558B
BC557C
hFE
120
120
120
120
180
420
90
150
270
170
290
500
120
180
300
500
800
800
220
460
800
CollectorEmitter Saturation Voltage
(IC = –100mAdc, IB = –5.0 mAdc) VCE(sat) --- –0.3 V
BaseEmitter Saturation V oltage
(IC = –100 mAdc, IB = –5.0mAdc) VBE(sat) 1.0V
Base–Emitter On Voltage
(IC = –2.0 mAdc, VCE = –5.0 Vdc)
(IC = –10 mAdc, VCE = –5.0 Vdc)
VBE(on) –0.55
–0.62
–0.7 –0.7
–0.82
V
SMALL–SIGNAL CHARACTERISTICS
CurrentGain — Bandwidth Product
(IC = –10 mA, VCE = –5.0 V, f = 100 MHz) BC556
BC557
BC558
fT150
150
150
280
320
360
MHz
Output Capacitance
(VCB = –10 V, IC = 0, f = 1.0 MHz) Cob 3.0 6.0 pF
MCC
BC556 thru BC558B
Revision: D 2013/01/01
TM
Micro Commercial Components
www.mccsemi.com
2 of 5
I
-100 nA
CBO
Collector Cut-off Current
(VCB = –70 V, IE = 0)
BC557/BC558
Figure 1. Normalized DC Current Gain
IC, COLLECTOR CURRENT (mAdc)
2.0
Figure 2. “Saturation” and “On” Voltages
IC, COLLECTOR CURRENT (mAdc)
–0.2
0.2
Figure 3. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 4. Base–Emitter Temperature Coefficient
IC, COLLECTOR CURRENT (mA)
–0.6
–0.7
–0.8
–0.9
–1.0
–0.5
0
–0.2
–0.4
–0.1
–0.3
1.6
1.2
2.0
2.8
2.4
–1.2
–1.6
–2.0
–0.02 –1.0 –10
0–20
–0.1
–0.4
–0.8
hFE, NORMALIZED DC CURRENT GAIN
V, VOLTAGE (VOL TS)
VCE, COLLECTOR–EMITTER VOL TAGE (V)
VB, TEMPERATURE COEFFICIENT (mV/ C)
°θ
1.5
1.0
0.7
0.5
0.3
–0.2 –10 –100
–1.0
TA = 25
°
CVBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE(on) @ VCE = –10 V
VCE = –10 V
TA = 25
°
C
–55
°
C to +125
°
C
IC = –100 mA
IC = –20 mA
–0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100
IC = –200 mAIC = –50 mAIC =
–10 mA
Figure 5. Capacitances
VR, REVERSE VOLTAGE (VOLTS)
10
Figure 6. Current–Gain – Bandwidth Product
IC, COLLECTOR CURRENT (mAdc)
–0.4
1.0
80
100
200
300
400
60
20
40
30
7.0
5.0
3.0
2.0
–0.5
C, CAPACITANCE (pF)
f , CURRENT–GAIN – BANDWIDTH PRODUCT (MHz)
T
TA = 25
°
C
Cob
Cib
–0.6 –1.0 –2.0 –4.0 –6.0 –10 –20 –30 –40
150
–1.0 –2.0 –3.0 –5.0 –10 –20 –30 –50
VCE = –10 V
TA = 25
°
C
TA = 25
°
C
1.0
MCC
BC556 thru BC558B
Revision: D 2013/01/01
TM
Micro Commercial Components
www.mccsemi.com
3 of 5
BC556
Figure 7. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
Figure 8. “On” Voltage
IC, COLLECTOR CURRENT (mA)
–0.8
–1.0
–0.6
–0.2
–0.4
1.0
2.0
–0.1 –1.0 –10 –200
–0.2
0.2
0.5
–0.2 –1.0 –10 –200
TJ = 25
°
C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = –5.0 V
Figure 9. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 10. Base–Emitter Temperature Coefficient
IC, COLLECTOR CURRENT (mA)
–1.0
–1.2
–1.6
–2.0
–0.02 –1.0 –10
0–20
–0.1
–0.4
–0.8
VCE, COLLECTOR–EMITTER VOL TAGE (VOL TS)
VB, TEMPERA TURE COEFFICIENT (mV/ C)
°θ
–0.2 –2.0 –10 –200
–1.0
TJ = 25
°
C
IC =
–10 mA
hFE, DC CURRENT GAIN (NORMALIZED)
V, VOLTAGE (VOL TS)
VCE = –5.0 V
TA = 25
°
C
0–0.5 –2.0 –5.0 –20 –50 –100
–0.05 –0.2 –0.5 –2.0 –5.0
–100 mA
–20 mA
–1.4
–1.8
–2.2
–2.6
–3.0 –0.5 –5.0 –20 –50 –100
–55
°
C to 125
°
C
θ
VB for VBE
–2.0 –5.0 –20 –50 –100
Figure 11. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
40
Figure 12. Current–Gain – Bandwidth Product
IC, COLLECTOR CURRENT (mA)
–0.1 –0.2 –1.0 –50
2.0 –2.0 –10 –100
100
200
500
50
20
20
10
6.0
4.0
–1.0 –10 –100
VCE = –5.0 V
C, CAPACITANCE (pF)
f , CURRENT–GAIN – BANDWIDTH PRODUCT
T
–0.5 –5.0 –20
TJ = 25
°
C
Cob
Cib
8.0
–50 mA –200 mA
MCC
BC556 thru BC558B
Revision: D 2013/01/01
TM
Micro Commercial Components
www.mccsemi.com
4 of 5
MCC
Revision: D 2013/01/01
TM
Micro Commercial Components
www.mccsemi.com
5 of 5
3
Part Number-BP Bulk: 100Kpcs/Carton
Ordering Information :
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Device Packing
Part Number-AP Ammo Packing: 20Kpcs/Carton
Note : Adding "-HF" suffix for halogen free, eg. Part Number-AP-HF