ATTENUATORS - ANALOG - CHIP
1
1 - 28
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
GaAs PIN MMIC VOLTAGE-VARIABLE
ATTENUATOR, 17 - 27 GHz
v01.0209
General Description
Features
Functional Diagram
Low Insertion Loss: 1.5 dB
Wide Dynamic Range: 18 dB
High Input IP3: +17 dBm
Analog Control Voltage: -4 to +4V
Die Size: 1.01 x 1.175 x 0.1 mm
Electrical Speci cations*, TA = +25 °C, 50 Ohm System
Typical Applications
This HMC-VVD102 is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Military Radios, Radar & ECM
• Test Equipment & Sensors
• Space
The HMC-VVD102 is a monolithic GaAs PIN diode
based Voltage Variable Attenuator (VVA) which
exhibits low insertion loss, high IP3 and wide dynamic
range. All bond pads and the die backside are Ti/
Au metallized and the PIN diode devices are fully
passivated for reliable operation. This wideband
MMIC VVA is compatible with conventional die
attach methods, as well as thermocompression and
thermosonic wirebonding, making it ideal for MCM
and hybrid microcircuit applications. All data shown
herein is measured with the chip in a 50 Ohm
environment and contacted with RF probes
HMC-VVD102
Parameter Min. Typ. Max. Units
Frequency Range 17 - 27 GHz
Insertion Loss 1.5 2 dB
Attenuation Range 18 dB
Return Loss (Min. Attenuation) 12 dB
Return Loss (Max. Attenuation) 15 dB
Input IP3 17 dBm
IM3 @ Pin = 0 dBm / Tone 30 dBc
*Unless otherwise indicated, all measurements are from probed die
ATTENUATORS - ANALOG - CHIP
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Maximum Attenuation vs. Frequency
Input & Output Return Loss vs.
Frequency @ Maximum Attenuation
Minimum Attenuation vs. Frequency
Input & Output Return Loss vs.
Frequency @ Minimum Attenuation
IM3 vs. Vdd2 (Vdd1= 4V) @ 17.5 GHz
(0 dBm Tones) IM3 vs. Frequency (0 dBm Tones)
HMC-VVD102
v01.0209
GaAs PIN MMIC VOLTAGE-VARIABLE
ATTENUATOR, 17 - 27 GHz
Note: Measured Performance Characteristics (Typical Performance at 25°C) Two-Tone measurement @ 0 dBm / tone
-4
-3
-2
-1
0
13 15 17 19 21 23 25 27
LOSS (dB)
FREQUENCY (GHz)
-25
-24
-23
-22
-21
-20
-19
13 15 17 19 21 23 25 27
LOSS (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
13 15 17 19 21 23 25 27
INPUT (dB)
OUTPUT (dB)
RETURN LOSS (dB)
FREQUENCY (GHz)
-18
-15
-12
-9
-6
-3
0
13 15 17 19 21 23 25 27
INPUT (dB)
OUTPUT (dB)
RETURN LOSS (dB)
FREQUENCY (GHz)
20
30
40
50
60
70
80
17 19 21 23 25 27
Vdd1 = 4V Vdd2 = 0.5V (Best Case)
Vdd1 = 4V Vdd2 = 0.5V (Worst Case)
IM3 (dBc)
FREQUENCY (GHz)
20
30
40
50
60
70
-4 -2 0 2 4
IM3 (dBc)
VD2 (V)
ATTENUATORS - ANALOG - CHIP
1
1 - 30
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-VVD102
v01.0209
GaAs PIN MMIC VOLTAGE-VARIABLE
ATTENUATOR, 17 - 27 GHz
Outline Drawing
Absolute Maximum Ratings
Control Voltage Range (Vdd) -6 to +6 Vdc
Storage Temperature -65 to +150 °C
Operating Temperature -55 to +85 °C
Total Bias Current (Idd) 20 mA
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. TYPICAL BOND PAD IS .004” SQUARE.
3. BACKSIDE METALLIZATION: GOLD.
4. BACKSIDE METAL IS GROUND.
5. BOND PAD METALLIZATION: GOLD.
6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
7. OVERALL DIE SIZE ±.002”
Die Packaging Information [1]
Standard Alternate
GP-2 (Gel Pack) [2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
ATTENUATORS - ANALOG - CHIP
1
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Pad Number Function Description Interface Schematic
1RFIN This pad is DC blocked
and matched to 50 Ohms.
2, 3 Vdd1, Vdd2 Control Input
4RFOUT This pad is DC blocked
and matched to 50 Ohms.
Die Bottom GND Die bottom must be connected to RF/DC ground.
Pad Descriptions
HMC-VVD102
v01.0209
GaAs PIN MMIC VOLTAGE-VARIABLE
ATTENUATOR, 17 - 27 GHz
ATTENUATORS - ANALOG - CHIP
1
1 - 32
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-VVD102
v01.0209
GaAs PIN MMIC VOLTAGE-VARIABLE
ATTENUATOR, 17 - 27 GHz
Assembly Diagram
Note 1: Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the attenuator.
Note 2: Best performance obtained from use of <10 mil (long) by 3 by 0.5mil ribbons on input and output.
ATTENUATORS - ANALOG - CHIP
1
1 - 33
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin  lm substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin  lm substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accom-
plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
Microstrip substrates should be placed as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protec-
tive containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against ESD
strikes.
Transients: Suppress instrument and bias supply transients while bias
is applied. Use shielded signal and bias cables to minimize inductive
pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or  ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and  at.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy  llet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded
with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended.
Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made
with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve
reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 1.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 2.
0.150mm (0.005”) Thick
Moly Tab
HMC-VVD102
v01.0209
GaAs PIN MMIC VOLTAGE-VARIABLE
ATTENUATOR, 17 - 27 GHz