MBR1035 - Taiwan Semiconductor

CREAT BY ART

- Low power loss, high efficiency

- Guardring for overvoltage protection

- High surge current capability

- Halogen-free according to IEC 61249-2-21 definition

Molding compound, UL flammability classification rating 94V-0

Base P/N with suffix "G" on packing code - halogen-free

Base P/N with prefix "H" on packing code - AEC-Q101 qualified

Terminal: Matte tin plated leads, solderable per JESD22-B102

Meet JESD 201 class 1A whisker test,

with prefix "H" on packing code meet JESD 201 class 2 whisker test

RRM

35 45 50 60 90 100 150 200 V

RMS

24 31 35 42 63 70 105 140 V

35 45 50 60 90 100 150 200 V

F(AV)

RRM

dV/dt V/μs

θJC O

C/W

STG O

Document Number: DS_D1308050 Version: L13

MBR1035 thru MBR10200

Taiwan Semiconductor

Schottk

Barrier Rectifier

FEATURES

- Compliant to RoHS Directive 2011/65/EU and

in accordance to WEEE 2002/96/EC

TO-220AC

MECHANICAL DATA

Case: TO-220AC

Polarity: As marked

Mounting torque: 5 in-lbs maximum

Weight: 1.88 g (approximately)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T

=25℃ unless otherwise noted)

PARAMETER SYMBOL MBR

1035

MBR

1045

MBR

1050

MBR

1060

MBR

1090

MBR

10100

MBR

10150 UNIT

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Peak forward surge current, 8.3 ms single half sine-wave

superimposed on rated load I

FSM

Peak repetitive reverse surge current (Note 1) 1.0

Maximum average forward rectified current

Peak repetitive forward current

(Rated VR, Square Wave, 20KHz) I

FRM

Maximum instantaneous forward voltage (Note 2)

=10A, T

=25℃

=10A, T

=125℃

V0.70 0.80 0.85

0.57

Typical thermal resistance

Operating junction temperature range - 55 to +150

Maximum reverse current @ rated VR T

=25 ℃

=125 ℃I

15 10

Storage temperature range

Note 1: tp = 2.0 μs, 1.0KHz

Note 2: Pulse test with PW=300μs, 1% duty cycle

MBR

10200

150

0.5

Voltage rate of change (Rated V

)

- 55 to +175

1.05

0.1

10000

0.70 0.71

PART NO.

MBR1060

(TA=25℃ unless otherwise noted)

Document Number: DS_D1308050 Version: L13

MBR1035 thru MBR10200

Taiwan Semiconductor

ORDERING INFORMATION

AEC-Q101

QUALIFIED PACKING CODE GREEN COMPOUND

CODE PACKAGE PACKING

Note 1: "xx" defines voltage from 35V (MBR1035) to 200V (MBR10200)

EXAMPLE

MBR10xx

(Note 1) Prefix "H" C0 Suffix "G" TO-220AC 50 / Tube

AEC-Q101 qualified

PREFERRED P/N AEC-Q101

QUALIFIED PACKING CODE GREEN COMPOUND

CODE DESCRIPTION

MBR1060 C0 C0

RATINGS AND CHARACTERISTICS CURVES

MBR1060 C0G C0 G Green compound

MBR1060HC0 H C0

0 50 100 150

AVERAGE FORWARD A

CURRENT (A)

CASE TEMPERATURE (oC)

FIG.1- FORWARD CURRENT DERATING CURVE

RESISTIVE OR

INDUCTIVELOAD

WITH HEATSINK

MBR1035-MBR1045

MBR1050-MBR10200

100

125

150

175

0 1 10 100

PEAK FORWARD SURGE CURRENT (A)

NUMBER OF CYCLES AT 60 Hz

FIG. 2- MAXIMUM NON-REPETITIVE FORWARD

SURGE CURRENT

0.001

0.01

0.1

100

0 20 40 60 80 100 120 140

INSTANTANEOUS REVERSE CURRENT (mA)

PERCENT OF RATED PEAK REVERSE VOLTAGE (%)

FIG. 4- TYPICAL REVERSE CHARACTERISTICS

TJ=75℃

TJ=125℃

TJ=25℃

MBR1035-MBR1060

MBR1090-MBR10200

0.01

0.1

100

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2

INSTANTANEOUS FORWARD CURRENT (A)

FORWARD VOLTAGE (V)

FIG. 3- TYPICAL INSTANTANEOUS FORWARD

CHARACTERISTICS

TJ=125℃

Pulse Width=300μs

1% Duty Cycle

TJ=25℃

MBR1035-MBR1045

MBR1050-MBR1060

MBR1090-MBR10100

MBR10150-MBR10200

Min Max Min Max

A - 10.50 - 0.413

B 2.62 3.44 0.103 0.135

C 2.80 4.20 0.110 0.165

D 0.68 0.94 0.027 0.037

E 3.54 4.00 0.139 0.157

F 14.60 16.00 0.575 0.630

G 0.00 1.60 0.000 0.063

H 13.19 14.79 0.519 0.582

I 4.95 5.20 0.195 0.205

J 4.42 4.76 0.174 0.187

K 1.14 1.40 0.045 0.055

L 5.84 6.86 0.230 0.270

M 2.20 2.80 0.087 0.110

N 0.35 0.64 0.014 0.025

P/N = Marking Code

G = Green Compound

YWW = Date Code

F = Factory Code

Document Number: DS_D1308050 Version: L13

MARKING DIAGRAM

MBR1035 thru MBR10200

Taiwan Semiconductor

PACKAGE OUTLINE DIMENSIONS

DIM. Unit (mm) Unit (inch)

100

1000

10000

0.1 1 10 100

JUNCTION CAPACITANCE (pF) A

REVERSE VOLTAGE (V)

FIG. 5- TYPICAL JUNCTION CAPACITANCE

f=1.0MHz

Vsig=50mVp-p

0.1

100

0.01 0.1 1 10 100

TRANSIENT THERMAL

IMPEDANCE (℃/W)

T-PULSE DURATION. (sec)

FIG. 6- TYPICAL TRANSIENT THERMAL

CHARACTERISTIC

CREAT BY ART

assumes no responsibility or liability for any errors inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied,to

any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of

sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,

relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,

merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.

Customers using or seling these products for use in such applications do so at their own risk and agree to fully

indemnify TSC for any damages resulting from such improper use or sale.

Document Number: DS_D1308050 Version: L13

MBR1035 thru MBR10200

Taiwan Semiconductor

Notice

Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,

Mouser Electronics

Authorized Distributor

Click to View Pricing, Inventory, Delivery & Lifecycle Information:

Taiwan Semiconductor:

MBR1050 MBR1060 MBR1045 MBR1035 MBR10100 MBR10150 MBR10200 MBR10200HC0 MBR10100HC0

MBR1035HC0 MBR1050HC0 MBR1090 C0 MBR10100 C0 MBR1060HC0 MBR1045HC0 MBR1090HC0

MBR1050 C0 MBR1035 C0 MBR10150 C0 MBR1060 C0 MBR1045 C0 MBR10200 C0