Symbol
VDS
VGS
IDM
TJ, TSTG
Symbol Ty
p
Max
65 90
85 125
RθJL 43 60
Junction and Storage Temperature Range
A
PD
°C
1.4
0.9
-55 to 150
TA=70°C
ID
6.5
5.2
30
Pulsed Drain Current B
Power Dissipation A
TA=25°C
Continuous Drain
Current A
Maximum UnitsParameter
TA=25°C
TA=70°C
Absolute Maximum Ratings TA=25°C unless otherwise noted
V
V±8Gate-Source Voltage
Drain-Source Voltage 20
°C/W
Maximum Junction-to-Ambient ASteady-State °C/W
W
Maximum Junction-to-Lead CSteady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient At ≤ 10s RθJA
AO3416, AO3416L ( Green Product )
N-Channel Enhancement Mode Field Effect Transistor
Rev 2: Nov 2004
Features
VDS (V) = 20V
ID = 6.5 A
RDS(ON) < 22mΩ (VGS = 4.5V)
RDS(ON) < 26mΩ (VGS = 2.5V)
RDS(ON) < 34mΩ (VGS = 1.8V)
ESD Rating: 2000V HBM
General Description
The AO3416 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications. It is ESD protected. AO3416L ( Green
Product ) is offered in a lead-free package.
S
GD
TO-236
(SOT-23)
Top View
D
S
G
Alpha & Omega Semiconductor, Ltd.
AO3416. AO3416L
Symbol Min Typ Max Units
BVDSS 20 V
1
TJ=55°C 5
±1
µ
A
±10
µ
A
VGS(th) 0.4 0.6 1 V
ID(ON) 30 A
18 22
TJ=125°C 25 30
21 26 m
Ω
26 34 m
Ω
gFS 29 S
VSD 0.76 1 V
IS2.5 A
Ciss 1160 pF
Coss 187 pF
Crss 146 pF
Rg1.5 Ω
Qg16 nC
Qgs 0.8 nC
Qgd 3.8 nC
tD(on) 6.2 ns
tr12.7 ns
tD(off) 51.7 ns
tf16 ns
trr 17.7 ns
Qrr 6.7 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
VDS=0V, VGS=±8V
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
VGS=0V, VDS=10V, f=1MHz
Gate Drain Charge
Turn-On Rise Time
Turn-Off DelayTime
VGS=5V, VDS=10V, RL=1.5Ω,
RGEN=3Ω
Gate resistance VGS=0V, VDS=0V, f=1MHz
Turn-Off Fall Time
SWITCHING PARAMETERS
Total Gate Charge
VGS=4.5V, VDS=10V, ID=6.5A
Gate Source Charge
mΩ
VGS=2.5V, ID=5.5A
IS=1A,VGS=0V
VDS=5V, ID=6.5A
VGS=1.8V, ID=5A
RDS(ON) Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
IDSS µA
Gate Threshold Voltage VDS=VGS ID=250µA
VDS=16V, VGS=0V
Zero Gate Voltage Drain Current
IGSS Gate-Body leakage current VDS=0V, VGS=±4.5V
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=6.5A, dI/dt=100A/µs
Drain-Source Breakdown Voltage
On state drain current
ID=250µA, VGS=0V
VGS=4.5V, VDS=5V
VGS=4.5V, ID=6.5A
Reverse Transfer Capacitance
IF=6.5A, dI/dt=100A/µs
A: The value of R θJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R
θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The
SOA curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.
AO3416. AO3416L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
S
0
10
20
30
012345
VDS(Volts)
Figure 1: On-Regions Characteristics
ID(A)
VGS =1V
VGS =1.5V
VGS =2V
8V
0
5
10
15
20
0.0 0.5 1.0 1.5 2.0 2.5
VGS(Volts)
Figure 2: Transfer Characteristics
ID(A)
25°C
125°C
VGS=5V
10
20
30
40
50
0 5 10 15 20
ID(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
RDS(ON)(mΩ)
VGS =4.5V
VGS =2.5V
VGS =1.8V
0.8
1.0
1.2
1.4
1.6
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
Normalize ON-Resistance
VGS=4.5V
VGS=2.5V
VGS=1.8V
ID=6.5A
10
20
30
40
50
60
02468
VGS(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
RDS(ON)(mΩ)
25°C
125°C
ID=6.5A
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
0.0 0.2 0.4 0.6 0.8 1.0
VSD(Volts)
Figure 6: Body-Diode Characteristics
IS(A)
25°C
125°C
Alpha & Omega Semiconductor, Ltd.
AO3416. AO3416L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
S
0
1
2
3
4
5
0 5 10 15 20
Qg (nC)
Figure 7: Gate-Charge Characteristics
VGS(Volts)
VDS=10V
ID=6.5A
0
400
800
1200
1600
2000
0 5 10 15 20
VDS(Volts)
Figure 8: Capacitance Characteristics
Capacitan ce (p F)
Ciss
Crss Coss
0
10
20
30
40
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Power (W)
TJ(Max)=150°C
TA=25°C
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
ZθJA Normalized Transient
Thermal R esi stan ce
T
o
nT
P
D
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
1.0
10.0
100.0
0.1 1 10 100
VDS (Volts)
ID (Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
µ
s
10ms
1ms
0.1s
1s
10s DC
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
10
µ
s
Alpha & Omega Semiconductor, Ltd.
