SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE BVcEO hee VcE (sat) fr Cop @ 10V Ic Pr Device Type @10mA Typical 1MHz Continuous @ 25C (V) Min. Max. @ Ic(mA)|Vc_e (V) Max. @ I{mA) fg(mA) (MHz) Typical (Pe) = (mA) (mw) 2N3903 40 300 2N3904 40 350 2N3905 40 250 2N3906 40 300 2N4123 30 300 2N4124 _ 25 350 2N4125 / 30 250 2N4126 | 25 300 2N4400 40 225 2N4401_ | 40 275 2N4402 40 300 2N4403 40 350 2N4409 50 100 2N4410 100 2N5088 75 2N5089 75 2N5219 2N5220 2N5221 2N5223 2N5225 2N5226 2N5227 GES929 GES930 GES2221 GES2221A GES2222 GES2222A GES2483 GES2906 GES2907 GES5305 GES5306 GES5307 GES5308 GES5368 GES5369 GES5370 GES5371 GES5372 GES5373 GES5374 103DEVICE NPN PNP 2N3903 2N4402 2N4403 1 2N4126 GES5371 GES5373 ES5374 7 G 10 GES5812 GES5817 GES5823 1 SILICON SIGNAL TRANSISTORS BVceo (Vv) TO-92 PACKAGE hee COMPLEMENTARY PAIRS VcE(SAT) MIN.-MAX. @ Ic, Vee (V) 50-150 10mA 50-150 50-1 100-300 50-150 100- 50-150 120-360 50-150 120-360 200 100-300 60-600 100-300 200-400 60-300 30-150 1 50-150 150-500 150-500 60-160 60-160 1 100-200 NIN INI N EDN 150-300 160 i 100-200 100-200 NIN 100-300 1 wafer f a} li] / fo} f if] af af fe] lpn 200-500 1 1 1 107 (V) MAX. @ COMPLEMENT 2N3905 2N3904 2N4125 DQ OOO) Oj;O1a) GES6013 12 GES6015 17 $601 GES2906 (Continued)SILICON SIGNAL TRANSISTORS SWITCHES T0-92 PACKAGE Vv tg (mA) Ig. (Torr! Ver (V) EB(OFF) Device Tore le (mA) (mA) (Ton) (Vv) 2N3903 225 2N3904 ' 250 2N3905 260 2N3906 300 2N4400 : : 255 2N4401 255 2N4402 255 2N4403 : 255 GES5368 ' 350 GES5369 350 GES5370 400 GES5371 400 GES5372 150 GES5373 160 GES5374 175 GES5375 175 GES6000 : 205 GES6002. 250 GES6004 180 GES6006 : 240 GES6001 155 GES6003. 200 GES6005 155 GES6007 200 GES6010 : GES6012 500 GES6014 400 GES6016 GES6011 GES6013 GES6015 GES6017 GES2221A GES2222A GES2906 GES2907 MPS3638 MPS3638A 110Silicon Transistors The General Electric 2N3905 and 2N3906 are silicon PNP planar epitaxial transistors designed for general purpose switching and amplifier applications. PNP values are negative: Observe proper polarity. absolute maximum ratings: (T, = 25C unless otherwise specified) VOLTAGES Collector to Emitter VcEO Collector to Base VcBo Emitter to Base VEBO CURRENT Collector Ic DISSIPATION Total Power Ta < 25C Py Derate Factor Ty > 25C TEMPERATURE Operating Ty Storage TstG Lead (1/16 + 1/32 from case for 10 sec.) TL 40 40 5 200 350 2.8 -55 to +135 -55 to +125 +230 Volts Volts Volts mA m Watts mW/C *electrical characteristics: (T, = 25C unless otherwise specified) STATIC CHARACTERISTICS Collector-Emitter Breakdown Voltage (Ic = ImA, Ig = 0) Collector-Base Breakdown Voltage (Ic = 10uA, Ig = 0) Emitter-Base Breakdown Voltage (Ig = 10uA, Ic = 0) Collector Cutoff Current (Vcr = 30V, VgE@rr) = 3V) Base Cutoff Current (Vcr = 30V, VaE@orF) = 3V) Forward Current Transfer Ratio (Vor = 1V, Ic = 100uA) 2N3905 2N3906 (Vor = 1V, Ic = 1mA) 2N3905 2N3906 (Vex = 1V, Ic = 10mA) 2N3905 2N3906 (Vox = 1V, Ic = 50mA) 2N3905 2N3906 (Vox = 1V, Ic = 100mA) 2N3905 2N3906 401 SYMBOL V(BR)CEO V(BR)CBO VBR)EBO IcEv IpEv hye hpg hee hpg thre Thre thre thre thre thre ptt jl eA Ropes | At Ly | go b te- eLo beg eg LLEMITTER SEATING PLANE 2.BASE TO-32 3. COLLECTOR Lu INCH 0 24 407| 482;/016;/019) 3 t 3.1 47 90/[125116 e 2.410/2.670;).095/1/05 27001 [500 11 = 270| [680 9g s NOTES: 1. THREE LEADS 2.CONTOUR OF PACKAGE UNCONTROLLED OUTSIDE THIS SIDE. 3.(THREE LEADS) fb2 APPLIES BETWEEN Ly AND Lo. @b APPLIES BETWEEN La AND 12.70 MM (.500") FROM THE SEATING PLANE. DIAMETER IS UN- CONTROLLED INL, AND BEYOND [2.70MM (.500"} FROM SEATING PLANE. mee ee ewe ee cee er ee ee ee ee ee ie ees aaa sa eee MIN. UNITS 40 Volts 40 _ Volts Volts nA nA 60 ~_ 40 80 50 150 100 30 60 15 - 30 -2N3905 2N3906 STATIC CHARACTERISTICS (Continued) SYMBOL Collector-Emitter Saturation Voltage (Ic = 10mA, Ip = 1mA) TVcK(sat) (Ic = 50mA, Ip = 5mA) t Vox(sat) Base-Emitter Saturation Voltage (Ic = 10mA, Ip = lmA) TVBE (sat) (Ic = 50mA, Ip = 5mA) TV BE (sat) DYNAMIC CHARACTERISTICS (Vcr = 5V, Ik = O,f =] MHz) Cob Emitter-Base Capacitance (Vez = 5V, Ic = O,f = 1 MHz) Ceb Current Gain - Bandwidth Product (Vor = 20V, Ig = 10mA, f = 100MHz) 2N3905 fy 2N3906 fr Noise Figure (Ig = 100nA, Veg = 5V, Rg = 1K2) 2N3905 NF BW = 15.7 KHz 2N3906 NF Turn-On Delay Time tg Collector Current Rise Time (Ic = 10mA, Ip1 = 1mA, Ver (off) = 5V) (Ry, = 2752) tr Storage Delay Time 2N3905 ts 2N3906 ts Collector Current Fall Time (Ic = 10mA, Ip, = Ig2 = 1 mA) 2N3905 tr (Ry = 275Q, Veco = 3V) 2N3906 te Hybrid Parameters (Ip = ImA, Veg = 10V, f = 1 KHz) 2N3905 hge 2N3906 hge 2N3905 hie 2N3906 hie 2N3905 hye 2N3906 hre 2N3905 hoe 2N3906 h {Pulse width < 300 usec., Duty Cycle < 2%. *JEDEC Registered Parameters. SWITCHING TIME EQUIVALENT TEST CIRCUITS -3.0V <1.0n8 +0.5V \ 10k [ { Wt FNC s40 pF ' -10.6V -- 300n8 DUTY CYCLE=2% = DUTY CYCLE= 2% Cg* Tote! shunt cepecitence of test jig end connectors. 1. TURN-ON TIME TEST CIRCUIT tg AND t, 402 = 10<1,< soomse| 4, oa ~10.8N MIN. 200 250 50 100 MAX. .250 400 85 95 4.5 10 35 200 225 60 75 200 400 12 10 40 60 UNITS Volts Volts Volts Volts pF pF MHz MHz dB dB ns ns ns ns ns ns KQ KQ X10-4 X10-4 umbhos yumbhos 2. TURN-OFF TIME TEST CIRCUIT t, AND ty1000 2N3905 Ts = 125C, Veg =-IV 100 L_Tas 25 hee FORWARD CURRENT TRANSFER RATIO fs -.I -l -10 -100 Ig - COLLECTOR CURRENT - mA 3. FORWARD CURRENT TRANSFER RATIO VS. COLLECTOR CURRENT 1000 2N3906 Ty = 125C, Voge =-1V Ta = = Voe* T, = 55C, VoE 7 100 Nee FORWARD CURRENT TRANSFER RATIO =I -| -10 -100 Ig - COLLECTOR CURRENT - mA 4. FORWARD CURRENT TRANSFER RATIO VS. COLLECTOR CURRENT 2N3905 2N3906 aoe toad owoowrn Ig =-tmA lOmA 1-50 mA Hooda a nan Voe(sat)~ COLLECTOR EMITTER SATURATION VOLTAGE - VOLTS io ot JO - UW & 8 ~.0l -.l -l -l0 -20 Ig - BASE CURRENT - mA 5. COLLECTOR-EMITTER SATURATION VOLTAGE vo0R CURRENT 3 2N3905 2N39062N3905 2N3906 Vee(gat) ~ COLLECTOR EMITTER SATURATION VOLTAGE - VOLTS Jt J = Vce (gat) - COLLECTOR EMITTER SATURATION VOLTAGE ~ VOLTS t -.0l +a dt N i st ll N @ O toot ot yv ow 2 VBE (eat)~ BASE EMITTER SATURATION VOLTAGE - VOLTS 1 1 = a Ie 2N3905 I Ig x 10 -l ~-I0 -100 Tc - COLLECTOR CURRENT - mA 3. COLLECTOR-EMITTER SATURATION VOLTAGE VS. COLLECTOR CURRENT 2N3906 I 21g X10 -l -10 -!00 Ig - COLLECTOR CURRENT - mA 7. COLLECTOR-EMITTER SATURATION VOLTAGE VS. COLLECTOR CURRENT Ig = Ig X 10 Vee (sot) 55C Vee (sot) 25C Tac Voce Ty 8 Nee -l -I0 -100 Tg - COLLECTOR CURRENT ~- mA 8. BASE EMITTER SATURATION VOLTAGE VS. COLLECTOR CURRENT 404