MITSUBISHI SEMICONDUCTOR THYRISTOR CR03AM LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE OUTLINE DRAWING CR03AM Dimensions in mm 5.0 MAX VOLTAGE CLASS TYPE NAME 2 12.5 MIN 1 1 CATHODE 2 ANODE 3 GATE CIRCUMSCRIBE CIRCLE 0.7 1.3 1.25 1.25 3 2 1 * IT (AV) ........................................................................ 0.3A * VDRM ..............................................................400V/600V * IGT ......................................................................... 100A 3.9 MAX 3 5.0 MAX 4.4 JEDEC : TO-92 APPLICATION Leakage protector, timer, gas ignitor MAXIMUM RATINGS Symbol Voltage class Parameter 8 12 Unit VRRM Repetitive peak reverse voltage 400 600 V VRSM Non-repetitive peak reverse voltage 500 800 V VR (DC) DC reverse voltage 320 480 V VDRM Repetitive peak off-state voltage 1 400 600 V VDSM Non-repetitive peak off-state voltage 1 500 800 V VD (DC) DC off-state voltage 1 320 480 V Ratings Unit 0.47 A 0.3 A 20 A 1.6 A2s Peak gate power dissipation 0.5 W Average gate power dissipation 0.1 W Peak gate forward voltage 6 V VRGM Peak gate reverse voltage 6 V IFGM Peak gate forward current 0.3 Tj Junction temperature Symbol Conditions Parameter IT (RMS) RMS on-state current IT (AV) Average on-state current Commercial frequency, sine half wave, 180 conduction, Ta=47C ITSM Surge on-state current 60Hz sine half wave 1 full cycle, peak value, non-repetitive I2t I2t Value corresponding to 1 cycle of half wave 60Hz, surge on-state current PGM PG (AV) VFGM for fusing Storage temperature Tstg -- Weight Typical value A -40 ~ +110 C -40 ~ +125 C 0.23 g 1. With gate to cathode resistance RGK=1k. Sep.2000 MITSUBISHI SEMICONDUCTOR THYRISTOR CR03AM LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Parameter Symbol Limits Test conditions Min. Typ. Max. Unit IRRM Repetitive peak reverse current Tj=110C, V RRM applied -- -- 0.1 mA IDRM Repetitive peak off-state current Tj=110C, V DRM applied, RGK=1k -- -- 0.1 mA VTM On-state voltage Ta=25C, I TM=4A, instantaneous value -- -- 1.8 V VGT Gate trigger voltage Tj=25C, VD =6V, IT=0.1A 3 -- -- 0.8 V VGD Gate non-trigger voltage Tj=110C, VD =1/2VDRM, RGK=1k 0.2 -- -- IGT Gate trigger current Tj=25C, VD =6V, IT=0.1A 3 1 -- IH Holding current Tj=25C, VD=12V, RGK=1k -- 1.5 3 R th (j-a) Thermal resistance Junction to ambient -- -- 180 100 2 V A mA C/ W 2. If special values of I GT are required, choose at least two items from those listed in the table below. (Example: AB, BC) Item A B C IGT (A) 1 ~ 30 20 ~ 50 40 ~ 100 The above values do not include the current flowing through the 1k resistance between the gate and cathode. 3. IGT, VGT measurement circuit. A1 3V DC IGS IGT A3 A2 V1 RGK 1 2 VGT 1k SWITCH 60 TUT 6V DC SWITCH 1 : IGT measurement SWITCH 2 : VGT measurement (Inner resistance of voltage meter is about 1k) MAXIMUM ON-STATE CHARACTERISTICS 101 7 Ta = 25C 5 3 2 100 7 5 3 2 10-1 7 5 3 2 10-2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 ON-STATE VOLTAGE (V) RATED SURGE ON-STATE CURRENT 20 SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) PERFORMANCE CURVES 18 16 14 12 10 8 6 4 2 0 100 2 3 4 5 7 101 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) Sep.2000 MITSUBISHI SEMICONDUCTOR THYRISTOR CR03AM LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE GATE VOLTAGE (V) 7 5 3 2 PGM = 0.5W VFGM = 6V 101 7 5 3 2 PG(AV) = 0.1W VGT = 0.8V (Tj = 25C) IGT = 100A (Tj = 25C) 100 7 5 3 2 10-1 7 5 3 2 IFGM = 0.3A VGD = 0.2V 10-2 5 710-12 3 5 7 100 2 3 5 7 101 2 3 5 7 1022 3 5 GATE TRIGGER CURRENT (Tj=tC) GATE TRIGGER CURRENT (Tj=25C) 102 100 (%) GATE CHARACTERISTICS 103 7 5 3 2 TYPICAL EXAMPLE 102 7 5 3 2 101 7 5 3 2 100 -40 -20 GATE CURRENT (mA) DISTRIBUTION 0.7 TYPICAL EXAMPLE IGT (25C) = 35A 0.6 0.5 0.4 0.3 0.2 0.1 AVERAGE POWER DISSIPATION (W) 0 -60 -40 -20 0 20 40 60 80 100 120 140 TRANSIENT THERMAL IMPEDANCE (C/W) 0.8 40 60 80 100 120 MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO AMBIENT) 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 200 180 160 140 120 100 80 60 40 20 0 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 JUNCTION TEMPERATURE (C) TIME (s) MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE HALF WAVE) 0.5 ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 160 0.4 = 30 180 120 90 60 0.3 0.2 360 0.1 0 0 0.1 0.2 RESISTIVE, INDUCTIVE LOADS 0.4 0.5 0.3 AVERAGE ON-STATE CURRENT (A) AMBIENT TEMPERATURE (C) GATE TRIGGER VOLTAGE (V) 0.9 20 JUNCTION TEMPERATURE (C) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 1.0 0 140 120 360 RESISTIVE, INDUCTIVE LOADS NATURAL CONVECTION 100 80 60 40 = 30 90 180 60 120 20 0 0 0.1 0.2 0.3 0.4 0.5 AVERAGE ON-STATE CURRENT (A) Sep.2000 MITSUBISHI SEMICONDUCTOR THYRISTOR CR03AM LOW POWER USE MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE FULL WAVE) 120 0.5 90 60 = 30 180 0.4 0.3 0.2 0.1 360 0 0 0.1 ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) 160 AMBIENT TEMPERATURE (C) AVERAGE POWER DISSIPATION (W) NON-INSULATED TYPE, GLASS PASSIVATION TYPE RESISTIVE LOADS 0.2 0.3 0.4 0.5 140 120 360 80 60 40 360 0.1 120 0.1 0.2 0.1 0.2 0.3 0.4 0.5 ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) 160 NATURAL CONVECTION 140 360 120 = 30 60 100 80 60 40 RESISTIVE, INDUCTIVE 90 LOADS 120 180 270 DC 20 0 0 0.1 0.2 0.3 0.4 0.5 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE BREAKOVER VOLTAGE VS. GATE TO CATHODE RESISTANCE TYPICAL EXAMPLE RGK = 1k 140 100 80 60 40 20 0 -40 -20 0 20 40 60 80 100 120 JUNCTION TEMPERATURE (C) 100 (%) 160 0 0 AVERAGE ON-STATE CURRENT (A) 160 BREAKOVER VOLTAGE (RGK = rk) BREAKOVER VOLTAGE (RGK = 1k) 100 (%) 0 RESISTIVE, INDUCTIVE LOADS 0.3 0.4 0.5 = 30 60 90 120 180 20 0 AMBIENT TEMPERATURE (C) 0.2 BREAKOVER VOLTAGE (T j = tC) BREAKOVER VOLTAGE (T j = 25C) AVERAGE POWER DISSIPATION (W) 0.3 RESISTIVE LOADS NATURAL CONVECTION 100 AVERAGE ON-STATE CURRENT (A) MAXIMUM AVERAGE POWER DISSIPATION (RECTANGULAR WAVE) 0.5 270 180 120 90 DC 0.4 60 = 30 120 TYPICAL EXAMPLE Tj = 110C 140 100 80 60 40 20 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 GATE TO CATHODE RESISTANCE (k) Sep.2000 MITSUBISHI SEMICONDUCTOR THYRISTOR CR03AM LOW POWER USE BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 200 RGK = 1k 180 140 120 100 Tj = 25C 80 60 40 Tj = 110C 20 102 7 5 3 2 101 7 5 3 2 RGK = 1k DISTRIBUTION TYPICAL EXAMPLE IGT (25C) = 35A 100 7 5 3 2 10-1 -60 -40 -20 0 20 40 60 80 100 120 140 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 JUNCTION TEMPERATURE (C) HOLDING CURRENT VS. GATE TO CATHODE RESISTANCE REPETITIVE PEAK REVERSE VOLTAGE VS. JUNCTION TEMPERATURE 160 TYPICAL EXAMPLE 140 TYPICAL EXAMPLE IGT (25C) IH (1k) # 1 10A 1.0mA # 2 26A 1.1mA 400 300 #1 #2 200 100 VD = 12V, Tj = 25C 0 10-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 GATE TO CATHODE RESISTANCE (k) 100 (%) RATE OF RISE OF OFF-STATE VOLTAGE (V/s) 500 HOLDING CURRENT (mA) HOLDING CURRENT (mA) 160 HOLDING CURRENT VS. JUNCTION TEMPERATURE REPETITIVE PEAK REVERSE VOLTAGE (Tj=tC) REPETITIVE PEAK REVERSE VOLTAGE (Tj=25C) BREAKOVER VOLTAGE (dv/dt = vV/s ) BREAKOVER VOLTAGE (dv/dt = 1V/s ) 100 (%) NON-INSULATED TYPE, GLASS PASSIVATION TYPE 120 100 80 60 40 20 0 -40 -20 0 20 40 60 80 100 120 JUNCTION TEMPERATURE (C) GATE TRIGGER CURRENT (A) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 104 7 5 4 3 2 TYPICAL EXAMPLE IGT (DC) # 1 16A # 2 65A #1 103 7 5 4 3 2 #2 Tj = 25C 102 100 2 3 4 5 7 101 2 3 4 5 7 102 GATE TRIGGER PULSE WIDTH (s) Sep.2000