SEMICONDUCTOR MMBTA13/14 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR. E B MAXIMUM RATING (Ta=25) VCBO 30 V Collector-Emitter Voltage VCES 30 V Emitter-Base Voltage VEBO 10 V IC 500 mA PC * 350 mW Tj 150 Tstg -55150 Collertor Current Collector Power Dissipation Junction Temperature Storage Temperature Range P P J Collector-Base Voltage 1 MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 DIM A B C D E G H J K L M N P M K UNIT H RATING N SYMBOL 3 G A 2 C CHARACTERISTIC L D L 1. EMITTER 2. BASE 3. COLLECTOR * : Package Mounted On 99.5% Alumina 1080.6mm. SOT-23 ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector-Emitter Breakdown Voltage VCES IC=0.1mA 30 - - V Emitter Cut-off Current ICBO VCB=30V - - 100 nA Emitter Cut-off Current IEBO VEB=10V - - 100 nA 5,000 - - 10,000 - - 10,000 - - 20,000 - - IC=100mA, IB=0.1mA - - 1.5 V IC=100mA, VCE=5V - - 2.0 V 125 - - MHz MMBTA13 DC Current Gain IC=10mA, VCE=5V MMBTA14 hFE * MMBTA13 IC=100mA, VCE=5V MMBTA14 VCE(sat) Collector-Emitter Saturation Voltage VBE Base-Emitter Voltage fT Current Gain Bandwith Product IC=10mA, f=100MHz, VCE=5V - *Pulse Test : Pulse Width300 S, Duty Cycle2.0% MARK SPEC Marking TYPE MMBTA13 MMBTA14 MARK AIX AHX 1999. 11. 30 Revision No : 4 Type Name Lot No. A X 1/2 MMBTA13/14 h FE - I f T - IC C TRANSITION FREQUENCY f T (MHz) DC CURRENT GAIN h FE 200K VCE =5V 100K 50K 30K 10K 5K 3K 1 3 10 30 100 300 500 VCE =5V 300 100 50 30 1 1K 3 I C =1000I B VBE (sat) VCE (sat) 0.5 0.3 0.2 COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER SATURATION VOLTAGE VBE (sat), VCE (sat) (V) 5 50 100 200 VCE =5V 100 50 30 10 5 3 1 5 10 30 50 100 COLLECTOR CURRENT I C (mA) 1999. 11. 30 30 I C - V BE V BE (sat), VCE (sat) - I C 1 10 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (A) 3 5 Revision No : 4 300 500 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 BASE-EMITTER VOLTAGE V BE (V) 2/2