AP04N70BI RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test D Fast Switching Characteristic Simple Drive Requirement BVDSS 600V RDS(ON) 2.4 ID G 4A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220CFM isolation package is widely preferred for all commercial-industrial through hole applications. G D S TO-220CFM(I) Absolute Maximum Ratings Parameter Symbol Rating Units VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage +30 V ID@TC=25 Continuous Drain Current, V GS @ 10V 4 A ID@TC=100 Continuous Drain Current, V GS @ 10V 2.5 A 15 A 33 W 0.26 W/ 8 mJ 4 A 1 IDM Pulsed Drain Current PD@TC=25 Total Power Dissipation Linear Derating Factor 2 EAS Single Pulse Avalanche Energy IAR Avalanche Current TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Parameter Value Unit Rthj-c Maximum Thermal Resistance, Junction-case 3.8 /W Rthj-a Maximum Thermal Resistance, Junction-ambient 65 /W Data & specifications subject to change without notice 1 200906243 AP04N70BI o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. 600 - - V - 0.6 - V/ VGS=10V, ID=2A - - 2.4 BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA 3 Max. Units RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance VDS=10V, ID=2A - 2.5 - S IDSS Drain-Source Leakage Current VDS=600V, VGS=0V - - 10 uA Drain-Source Leakage Current (T j=125 C) VDS=480V,VGS=0V - - 500 uA Gate-Source Leakage VGS=+30V, VDS=0V - - +100 nA ID=4A - 16.7 - nC o IGSS 3 Qg Total Gate Charge Qgs Gate-Source Charge VDS=480V - 4.1 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 4.9 - nC 3 td(on) Turn-on Delay Time VDD=300V - 11 - ns tr Rise Time ID=4A - 8.3 - ns td(off) Turn-off Delay Time RG=10,VGS=10V - 23.8 - ns tf Fall Time RD=75 - 8.2 - ns Ciss Input Capacitance VGS=0V - 950 - pF Coss Output Capacitance VDS=25V - 65 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 6 - pF Min. Typ. - - 4 A - - 15 A - - 1.5 V Source-Drain Diode Symbol IS ISM VSD Parameter Test Conditions VD=VG=0V , VS=1.5V Continuous Source Current ( Body Diode ) 1 Pulsed Source Current ( Body Diode ) Forward On Voltage 3 Tj=25, IS=4A, VGS=0V Max. Units Notes: 1.Pulse width limited by max. junction temperature o 2.Starting Tj=25 C , VDD=50V , L=1mH , RG=25 , IAS=4A. 3.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP04N70BI 2.5 2 T C =25 o C T C =150 o C V G =10V V G =10V 2 V G =6.0V 1.5 V G =5.0V V G =5.0V ID , Drain Current (A) ID , Drain Current (A) V G =6.0V 1.5 V G =4.5V 1 V G =4.5V 1 V G =4.0V 0.5 0.5 V G =4.0V V G =3.5V 0 0 0 1 2 3 4 5 6 7 0 2 4 6 8 10 12 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.2 2.8 I D =2A 2.4 V G =10V 1.1 Normalized R DS(ON) Normalized BVDSS (V) 2 1 1.6 1.2 0.8 0.9 0.4 0.8 0 -50 0 50 100 o T j , Junction Temperature ( C) Fig 3. Normalized BVDSS v.s. Junction Temperature 150 -50 0 50 100 150 T j , Junction Temperature ( o C ) Fig 4. Normalized On-Resistance v.s. Junction Temperature 3 AP04N70BI 4.5 40 4 3.5 3 2.5 PD (W) ID , Drain Current (A) 30 2 20 1.5 10 1 0.5 0 0 25 50 75 100 125 T c , Case Temperature ( o 0 150 50 100 T c , Case Temperature ( C) Fig 5. Maximum Drain Current v.s. 150 o C) Fig 6. Typical Power Dissipation Case Temperature 1 10 ID (A) 100us 1 1ms 10ms 100ms 0.1 1s Normalized Thermal Response (R thjc) 100 DUTY=0.5 0.2 0.1 0.1 0.05 t 0.01 DC o T c =25 C Single Pulse PDM 0.02 T SINGLE PULSE Duty factor = t/T Peak Tj = P DM x Rthjc + TC 0.01 0.01 1 10 100 V DS (V) Fig 7. Maximum Safe Operating Area 1000 0.00001 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig 8. Effective Transient Thermal Impedance 4 AP04N70BI f=1.0MHz 16 10000 I D =4A 12 V DS =320V Ciss V DS =400V 10 V DS =480V C (pF) VGS , Gate to Source Voltage (V) 14 8 100 Coss 6 4 Crss 2 0 1 0 5 10 15 20 25 1 6 11 16 21 26 31 V DS (V) Q G , Total Gate Charge (nC) Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 5 100 4 10 T j =150 o C T j = 25 o C IS (A) VGS(th) (V) 3 2 1 1 0 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V SD (V) Fig 11. Forward Characteristic of Reverse Diode 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C ) Fig 12. Gate Threshold Voltage v.s. Junction Temperature 5 AP04N70BI VDS RD VDS D RG 90% TO THE OSCILLOSCOPE 0.5x RATED VDS G 10% + S 10 V VGS VGS - td(on) Fig 13. Switching Time Circuit td(off) tf tr Fig 14. Switching Time Waveform VG VDS 10V 0.8 x RATED VDS G S QG TO THE OSCILLOSCOPE D QGS QGD VGS + 1~ 3 mA IG ID Charge Fig 15. Gate Charge Circuit Q Fig 16. Gate Charge Waveform 6