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Features:
•Plastic SMD package.
•Low leakage current: typical 3pA.
•Switching time: typical 0.8µs.
•Continuous reverse voltage: maximum 75V.
•Repetitive peak reverse voltage: maximum 85V.
•Repetitive peak forward current: maximum 500mA.
Application : Low leakage current applications in surface mounted circuits.
Description:
Epitaxial medium-speed switching diode with a low leakage current in a small SOT23 plastic SMD package.
Pin Description
1 Anode
2Not Connected
3 Cathode
Marking code: JVp = made in Hong Kong; JVt = made in Malaysia.
Top view
MAM106
Simplified Outline (SOT23) and Symbol
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Limiting Values
In accordance with the Absolute Maximum Rating System (IEC 134).
Symbol Parameter Conditions Minimum Maximum Unit
VRRM Repetitive Peak Reverse Voltage - - 85
V
VRContinuous Reverse Voltage - - 75
IFContinuous Forward Current Note 1 - 215
mA
IFRM Repetitive Peak Forward Current - - 500
IFSM Non-repetitive Peak Forward
Current
Square Wave, Tj = 25°C Prior to Surge
tp= 1µs
tp = 1µs
tp = 1s
-4
1
0.5
A
A
A
Ptot Total Power Dissipation -Tamb = 25°C, Note 1 -65 250 mW
Tstg Storage Temperature - - +150
°C
TjJunction Temperature - - 150
Note: 1. Device mounted on a FR4 printed-circuit board.
Symbol Parameter Conditions Minimum Maximum Unit
VFForward Voltage
IF= 1mA
IF= 10mA
IF = 50mA
IF= 150mA
-
-
-
-
0.9
1
1.1
1.25
V
V
V
V
IRReverse Current VR= 75V
VR= 75V; Tj= 150°C
0.003
3
5
80
nA
nA
CdDiode Capacitance f = 1MHz, VR= 0 3 - pF
trr Reverse Recovery Time
When Switched from IF= 10mA to
IR= 10mA; RL= 100Ω;
Measured at IR= 1mA
0.8 3 µs
Electrical Characteristics (Tj = 25°°C unless otherwise specified)
Thermal Characteristics
Symbol Parameter Conditions Value Unit
Rth j-tp Thermal Resistance from Junction to Tie-Point - 330
K/W
Rth j-a Thermal Resistance from Junction to Ambient Note 1 500
Note: 1. Device mounted on a FR4 printed-circuit board.
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Graphical Data
Device Mounted on a FR4 Printed-Circuit Board. (1) Tj= 150°C; Typical values.
(2) Tj = 25°C; Typical values.
(3) Tj = 25°C; maximum values.
Maximum Permissible Continuous Forward Current
as a Function of Ambient Temperature
Forward Current as a Function of Forward Voltage
Maximum Permissible Non-Repetitive Peak Forward Current as a Function of Pulse Duration
Based on square wave currents; Tj= 25°C prior to surge.
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VR= 75 V f = 1 MHz; Tj = 25 °C
Reverse Current as a Function of Junction Temperature Diode Capacitance as a Function of Reverse
Voltage; Typical Values
Reverse Recovery Time Test Circuit and Waveforms
Part Number Table
Description Part Number
Diode, High Speed, SOT-23 BAS116
For enquiries from all other markets
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Notes:
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