IRFR/U5410
HEXFET® Power MOSFET
VDSS = -100V
RDS(on) = 0.205W
ID = -13A
5/3/99
Parameter Typ. Max. Units
RqJC Junction-to-Case 1.9
RqJA Junction-to-Ambient (PCB mount)** 50 °C/W
RqJA Junction-to-Ambient 110
Thermal Resistance
D-Pak
TO-252AA I-Pak
TO-251AA
lUltra Low On-Resistance
lP-Channel
lSurface Mount (IRFR5410)
lStraight Lead (IRFU5410)
lAdvanced Process Technology
lFast Switching
lFully Avalanche Rated
Description
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -13
ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -8.2 A
IDM Pulsed Drain Current -52
PD @TC = 25°C Power Dissipation 66 W
Linear Derating Factor 0.53 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy194 mJ
IAR Avalanche Current-8.4 A
EAR Repetitive Avalanche Energy6.3 mJ
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
TJOperating Junction and -55 to + 150
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Absolute Maximum Ratings
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
S
D
G
PD - 9.1533A
www.irf.com 1
IRFR/U5410
2www.irf.com
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage -1.6 V TJ = 25°C, IS = -7.8A, VGS = 0V
trr Reverse Recovery Time 130 190 ns TJ = 25°C, IF = -8.4A
Qrr Reverse Recovery Charge 650 970 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
-13
-52
A
Notes:
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
This is applied for I-PAK, LS of D-PAK is measured between
lead and center of die contact
Starting TJ = 25°C, L = 6.4mH
RG = 25W, IAS = -7.8A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD £ -7.8A, di/dt £ 200A/µs, VDD £ V(BR)DSS,
TJ £ 150°C
Pulse width £ 300µs; duty cycle £ 2%.
S
D
G
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -100 V VGS = 0V, ID = -250µA
DV(BR)DSS/DTJBreakdown Voltage Temp. Coefficient -0.12 V/°C Reference to 25°C, ID = -1.0mA
RDS(on) Static Drain-to-Source On-Resistance 0.205 WVGS = -10V, ID = -7.8A
VGS(th) Gate Threshold Voltage -2.0 -4.0 V VDS = VGS, ID = -250µA
gfs Forward Transconductance 3.2 S VDS = -50V, ID = -7.8A
-25 µA VDS = -100V, VGS = 0V
-250 VDS = -80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage 100 VGS = 20V
Gate-to-Source Reverse Leakage -100 nA VGS = -20V
QgTotal Gate Charge 58 ID = -8.4A
Qgs Gate-to-Source Charge 8.3 nC VDS = -80V
Qgd Gate-to-Drain ("Miller") Charge 32 VGS = -10V, See Fig. 6 and 13
td(on) Turn-On Delay Time 15 VDD = 50V
trRise Time 58 ID = -8.4A
td(off) Turn-Off Delay Time 45 RG = 9.1W
tfFall Time 46 RD =6.2W, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
Ciss Input Capacitance 760 VGS = 0V
Coss Output Capacitance 260 pF VDS = -25V
Crss Reverse Transfer Capacitance 170 = 1.0MHz, See Fig. 5
nH
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
LDInternal Drain Inductance
LSInternal Source Inductance
IGSS
ns
4.5
7.5
IDSS Drain-to-Source Leakage Current
S
D
G
Uses IRF9530N data and test conditions.
IRFR/U5410
www.irf.com 3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.01
0.1
1
10
100
0.1 1 10 100
20µs PULS E WID TH
T = 25 C
J°
TOP
BOTTOM
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
-V , Drain-to-Source Voltage (V)
-I , D rai n-t o-Sour ce C urr ent ( A)
DS
D
-4.5V
0.1
1
10
100
0.1 1 10 100
20µs PULS E WID TH
T = 150 C
J°
TOP
BOTTOM
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
-V , Drain-to-Source Voltage (V)
-I , D rain-t o-Sour ce C urr ent (A )
DS
D
-4.5V
0.1
1
10
100
4 5 6 7 8 9 10
V = 10V
20µs PULSE WIDTH
DS
-V , Gate-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
-10V
-14A
IRFR/U5410
4www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
0.2 0.8 1.4 2.0 2.6
-V ,Source-to-Dra in V olta g e (V)
-I , Rever se Drain Current ( A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
0
400
800
1200
1600
2000
1 10 100
C , Capa citance ( pF)
A
DS
-V , Drain-to-Sou rce Vo lta ge (V)
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
os s d s gd
C
iss
C
oss
C
rss
010 20 30 40 50 60
0
5
10
15
20
Q , To tal Gate Charge (nC)
-V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
-8.4A
V =-20V
DS
V =-50V
DS
V =-80V
DS
1
10
100
1000
1 10 100 1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T = 150 C
= 25 C
°°
J
C
-V , Drain-to-Source Voltage (V)
-I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
IRFR/U5410
www.irf.com 5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
VDS
-10V
Pulse Width £ 1 µs
Duty Factor £ 0.1 %
RD
VGS
VDD
RG
D.U.T.
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
25 50 75 100 125 150
0
3
6
9
12
15
T , Case Temperature ( C)
-I , Drain Current (A)
°
C
D
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. D u ty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SIN GLE PULSE
(THER M AL R ESPONSE)
IRFR/U5410
6www.irf.com
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Q
G
Q
GS
Q
GD
V
G
Charge
-10V
D.U.T. V
DS
I
D
I
G
-3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tpV
(
BR
)
DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
V
DS
V
DD
DRIVER
A
15V
-20V
-
+VDD
25 50 75 100 125 150
0
100
200
300
400
500
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
-3.5A
-4.9A
-7.8A
IRFR/U5410
www.irf.com 7
Peak Diode Recovery dv/dt Test Circuit
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P.W.
Period
+
-
+
+
+
-
-
-
RG
VDD
· dv/dt controlled by RG
· ISD controlled by Duty Factor "D"
· D.U.T. - Device Under Test
D.U.T*Circuit Layout Considerations
· Low Stray Inductance
· Ground Plane
· Low Leakage Inductance
Current Transformer
* Reverse Polarity of D.U.T for P-Channel
VGS
[ ]
[ ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
[ ] ***
Fig 14. For P-Channel HEXFETS
IRFR/U5410
8www.irf.com
Package Outline
TO-252AA Outline
Dimensions are shown in millimeters (inches)
TO-252AA (D-Pak)
Part Marking Information
6.73 (.265)
6.35 (.250)
- A -
4
1 2 3
6.22 (.245)
5.97 (.235)
- B -
3X 0.89 (.035)
0.64 (.025)
0.25 (.010) M A M B
4.57 (.180)
2.28 (.090)
2X 1.14 (. 045)
0.76 (. 030)
1.52 (.060)
1.15 (.045)
1.02 (.040)
1.64 (.025)
5.46 (.215)
5.21 (.205) 1.27 (.050)
0.88 (.035)
2.38 (. 094)
2.19 (. 086) 1.14 (.045)
0.89 (.035)
0.58 (.023)
0.46 (.018)
6.45 (.245)
5.68 (.224)
0.51 (.020)
MIN.
0.58 (.023)
0.46 (.018)
L EAD ASSIGN MENTS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
10.42 (.410)
9.40 (. 370)
NOTES:
1 DIMENSIONI NG & TOLERANCING PER ANSI Y14.5 M, 1982.
2 CONTROLL ING DIMENSION : INCH.
3 CONFORMS TO JEDEC OUTLINE TO-252AA.
4 DIMENSIONS SHOWN ARE BEFORE SO LDE R DIP,
SOLDER DI P MAX. +0.16 (.006).
INTERNATIONAL
RECTIFIE R
LOGO
ASSEMBLY
L OT CODE
EXAMPLE : THIS IS AN IRFR120
WITH ASSEMBLY
LOT CODE 9U1P FIRST PORTION
OF PART NUMBER
SECOND PORTI ON
OF PART NUMBER
120
IRFR
9U 1P
A
IRFR/U5410
www.irf.com 9
Package Outline
TO-251AA Outline
Dimensions are shown in millimeters (inches)
TO-251AA (I-Pak)
Part Marking Information
INTERNATIONAL
RECTI FIER
LOGO
ASSEMBLY
L OT CODE
FIRST PORTION
OF PART NUMBE
R
SECOND PORTION
OF PART NUMB E R
120
9U 1P
EXAMPLE : THIS IS AN IRFU120
WITH ASSEMBLY
LOT CODE 9U1P
IRFU
6.73 (.265)
6.35 (.250)
- A -
6.22 (.245)
5.97 (.235)
- B -
3X 0.89 (.035)
0.64 (.025)
0.25 (.010) M A M B
2.28 (.090)
1.14 (.045)
0.76 (.030)
5.46 (.215)
5.21 (.205) 1.27 (.050)
0.88 (.035)
2.38 (. 094)
2.19 (. 086)
1.14 (.045)
0.89 (.035)
0.58 (.023)
0.46 (.018) LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
NOTES:
1 DIMENSIONI NG & TOLERANCING PER ANSI Y14.5M, 1 98 2.
2 CO NTROLLING DIMEN SION : INCH.
3 CONFORMS TO JEDEC OUTLINE TO-252AA.
4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP,
SOLDER DIP MAX. +0.16 (.006).
9.65 (.380)
8.89 (.350)
2X
3X
2.28 (.090)
1.91 (.075)
1.52 (.060)
1.15 (.045)
4
1 2 3
6.45 (.245)
5.68 (.224)
0.58 (.023)
0.46 (.018)
IRFR/U5410
10 www.irf.com
Tape & Reel Information
TO-252AA
TR
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
12.1 ( .476 )
11.9 ( .469 ) FEED DIRECTION FEED DIRECTION
16.3 ( .641 )
15.7 ( .619 )
TRR TRL
NO TES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
16 mm
13 INCH
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/ Data and specifications subject to change without notice. 8/98
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
