Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com Page 1 of 4 April 2006
AH116
½ Watt, High Linearity InGaP HBT Amplifier Product Information
The Communications Edge
TM
Product Features
x 800 – 1000 MHz
x +28 dBm P1dB
x +43 dBm Output IP3
x 17.5 dB Gain @ 900 MHz
x +5V Single Positive Supply
x MTTF > 100 Years
x Lead-free/green/RoHS-compliant
SOIC-8 SMT Pkg.
Applications
x Final stage amplifiers for Repeaters
x Mobile Infrastructure
Product Description
The AH116 is a high dynamic range driver amplifier in a
low-cost surface mount package. The InGaP/GaAs HBT
is able to achieve high performance for various narrow-
band tuned application circuits with up to +43 dBm OIP3
and +28 dBm of compressed 1-dB power and is housed
in a lead-free/green/RoHS-compliant SOIC-8 package. All
devices are 100% RF and DC tested.
The product is targeted for use as driver amplifiers for
wireless infrastructure where high linearity and medium
power is required. The internal active bias allows the
AH116 to maintain high linearity over temperature and
operate directly off a +5 V supply. This combination
makes the device an excellent fit for transceiver line
cards and power amplifiers in current and next generation
multi-carrier 3G base stations.
Functional Diagram
Function Pin No.
Vref 1
Input 3
Output 6, 7
Vbias 8
GND Backside Paddle
N/C or GND 2, 4, 5
Specifications (1)
Parameters Units
Min Typ Max
Frequency Range MHz 900
Gain dB 15 17.5
Input R.L. dB 18
Output R.L. dB 7
Output P1dB dBm +27 +28.7
Output IP3 (2) dBm +42 +43
IS-95A Channel Power
@ -45 dBc ACPR dBm +23
Noise Figure dB 7
Operating Current Range (3) mA 200 250 300
Device Voltage V +5
1. Test conditions unless otherwise noted: 25 ºC, +5V Vsupply, 900 MHz, in tuned application circuit.
2. 3OIP measured with two tones at an output power of +13 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. This corresponds to the quiescent current or operating current under small-signal conditions. It is
expected that the current can increase up to 300mA at P1dB.
Absolute Maximum Rating
Parameter Rating
Operating Case Temperature -40 to +85 qC
Storage Temperature -65 to +150 qC
RF Input Power (continuous) +22 dBm
Device Voltage +8 V
Device Current 400 mA
Device Power 2 W
Junction Temperature +250 qC
Operation of this device above any of these parameters may cause permanent damage.
Typical Performance (1)
Parameters Units Typical
Frequency MHz 900
Gain dB 17.5
S11 dB -18
S22 dB -7
Output P1dB dBm +28.7
Output IP3 (2) dBm +43
IS-95A Channel Power
@ -45 dBc ACPR dBm +23
Noise Figure dB 7
Supply Bias +5 V @ 250 mA
Ordering Information
Part No. Description
AH116-S8G ½ Watt, High Linearity InGaP HBT Amplifier
(lead-free/green/RoHS-compliant SOIC-8 Pkg)
AH116-S8PCB900 900 MHz Evaluation Board
1
2
3
4
8
7
6
5
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com Page 2 of 4 April 2006
AH116
½ Watt, High Linearity InGaP HBT Amplifier Product Information
The Communications Edge
TM
Typical Device Data
S-Parameters (Vcc = +5 V, Icc = 250 mA, T = 25
C, calibrated to device leads)
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
Frequency (GHz)
Gain_Maximum Stable Gain
0
5
10
15
20
25
30
Gain (dB)
DB(|S[2,1]|) DB(GMax)
0
1.0 1.0-1.0
10.0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-2.0
3.0
3.0
-3.0
4.0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
S11
Swp Max
5.05GHz
Swp Min
0.05GHz
0
1.0 1.0-1.0
10.0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-2.0
3.0
3.0
-3.0
4.0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
S22
Swp Max
5.05GHz
Swp Min
0.05GHz
Notes:
The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency,
it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line.
The return loss plots are shown from 50 – 5050 MHz, with markers placed at 0.5 – 5.05 GHz in 0.5 GHz increments.
S-Parameters (Vcc = +5 V, Icc = 250 mA, T = 25
C, unmatched 50 ohm system, calibrated to device leads)
Freq (MHz) S11 (dB) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang)
50 -2.72 24.16 133.35 -36.72 29.75 -2.23 -102.97
100 -2.25 20.33 124.95 -35.31 13.96 -3.08 -137.03
200 -2.31 17.23 119.37 -34.90 2.32 -3.32 -159.63
400 -3.08 15.63 98.28 -33.62 -16.36 -3.48 -172.70
600 -5.79 15.58 69.70 -32.10 -37.73 -2.87 -176.25
800 -19.72 15.22 25.60 -31.19 -78.95 -2.27 -179.74
1000 -6.06 11.91 -22.67 -33.26 -129.67 -1.40 173.15
Device S-parameters are available for download off of the website at: http://www.wj.com
Application Circuit PC Board Layout
Circuit Board Material: .014” Getek, 4 - layer, 1 oz copper, Microstrip line details: width = .026”, spacing = .026”
The silk screen markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’, ‘3’, etc. are used as placemarkers for the input and output tuning
Shunt capacitors – C8 and C9. The markers and vias are spaced in .050” increments.
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com Page 3 of 4 April 2006
AH116
½ Watt, High Linearity InGaP HBT Amplifier Product Information
The Communications Edge
TM
900 MHz Application Circuit (AH116-S8PCB900)
Typical RF Performance at 25 qC
Frequency 900 MHz
S21 – Gain 17.5 dB
S11 – Input Return Loss -18 dB
S22 – Output Return Loss -7 dB
Output P1dB +28.7 dBm
Output IP3
(+17 dBm / tone, 1 MHz spacing) +43 dBm
Channel Power
(@-45 dBc ACPR, IS-95 9 channels fwd) +23 dBm
Noise Figure 7 dB
Device / Supply Voltage +5 V
Quiescent Current 250 mA
S21 vs Frequency
10
12
14
16
18
20
840 860 880 900 920 940
Frequency (MHz)
S21 (dB)
+25°C
+85°C
-40°C
S11 vs. Frequency
-35
-30
-25
-20
-15
-10
-5
0
840 860 880 900 920 940
Frequency (MHz)
S11 (dB)
+25°C
+85°C
-40°C
S22 vs. Frequency
-35
-30
-25
-20
-15
-10
-5
0
840 860 880 900 920 940
Frequency (MHz)
S22 (dB)
+25°C
+85°C
-40°C
Noise Figure vs. Frequency
0
2
4
6
8
10
840 860 880 900 920 940
Frequency (MHz)
NF (dB)
+25°C
+80°C
-40°C
P1 dB vs. Frequency
20
22
24
26
28
30
840 860 880 900 920 940
Frequency (MHz)
P1 dB (dBm)
+25°C
+85°C
-40°C
ACPR vs. Channel Power
IS-95, 9 Ch. Fwd, ±885KHz Meas BW, 900 MHz
-80
-75
-70
-65
-60
-55
-50
-45
-40
18 19 20 21 22 23 24
Output Channel Power (dBm)
ACPR (dBm)
+25°C
+85°C
-40°C
OIP3 vs. Frequency
+25°, +13 dBm / tone
35
37
39
41
43
45
840 860 880 900 920 940
Frequency (MHz)
OIP3 (dBm)
OIP3 vs. Temperature
freq. = 900, 901 MHz, +13 dBm /tone
35
37
39
41
43
45
-40 -15 10 35 60 85
Temperature (°C)
OIP3 (dBm)
freq. = 900, 901 MHz, +25°C
35
37
39
41
43
45
8 10 12 14 16 18 20
Output Power (dBm)
OIP3 (dBm)
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com Page 4 of 4 April 2006
AH116
½ Watt, High Linearity InGaP HBT Amplifier Product Information
The Communications Edge
TM
AH116-S8G (Lead-Free Package) Mechanical Information
This package is lead-free/green/RoHS-compliant. The plating material on the leads is NiPdAu. It is compatible with both lead-free
(maximum 260 qC reflow temperature) and lead (maximum 245 qC reflow temperature) soldering processes.
Outline Drawing
Mounting Configuration / Land Pattern
Thermal Specifications
Parameter Rating
Operating Case Temperature (1) -40 to +85 qC
Thermal Resistance (2), Rth 62 qC / W
Junction Temperature (3), Tj 162 qC
Notes:
1. The amplifier can be operated at 105
C case temperature for up to 1000
hours over its lifetime without degradation in performance and will not
degrade device operation at the recommended maximum 85
C case
temperature for the rest of its lifetime.
2. The thermal resistance is referenced from the junction-to-case at a case
temperature of 85
C. Tjc is a function of the voltage at pins 6 and 7 and
the current applied to pins 6, 7, and 8 and can be calculated by:
Tjc = Tcase + Rth * Vcc * Icc
3. This corresponds to the typical biasing condition of +5V, 250 mA at an
85
C case temperature. A minimum MTTF of 1 million hours is achieved
for junction temperatures below 247
C.
Product Marking
The component will be marked with an
“AH116G” designator with an alphanumeric lot
code on the top surface of the package. The
obsolete tin-lead package is marked with an
“AH116-S8” or “ECP052G” designator
followed by an alphanumeric lot code.
Tape and reel specifications for this part are
located on the website in the “Application
Notes” section.
ESD / MSL Information
ESD Rating: Class 1B
Value: Passes
500V to <1000V
Test: Human Body Model (HBM)
Standard: JEDEC Standard JESD22-A114
MSL Rating: Level 2 at +260
C convection reflow
Standard: JEDEC Standard J-STD-020
Mounting Config. Notes
1. Ground / thermal vias are critical for the proper performance of this
device. Vias should use a .35mm (#80 / .0135”) diameter drill and
have a final plated thru diameter of .25 mm (.010”).
2. Add as much copper as possible to inner and outer layers near the
part to ensure optimal thermal performance.
3. Mounting screws can be added near the part to fasten the board to a
heatsink. Ensure that the ground / thermal via region contacts the
heatsink.
4. Do not put solder mask on the backside of the PC board in the
region where the board contacts the heatsink.
5. RF trace width depends upon the PC board material and
construction.
6. Use 1 oz. Copper minimum.
7. All dimensions are in millimeters (inches). Angles are in degrees.
MTTF vs. GND Tab Temperature
100
1000
10000
100000
60 70 80 90 100 110 120
Tab Temperature (°C)
MTTF (million hrs)