TN2010T
Siliconix
S-52426—Rev. C, 14-Apr-97 1
N-Channel Enhancement-Mode MOSFET Transistor
Product Summary
V(BR)DSS Min (V) rDS(on) Max () VGS(th) (V) ID (A)
200 11 0.8 to 3.0 0.12
Features Benefits Applications
Low On-Resistance: 9.5
Secondary Breakdown Free: 220 V
Low Power/Voltage Driven
Low Input and Output Leakage
Excellent Thermal Stability
Low Offset Voltage
Full-Voltage Operation
Easily Driven Without Buffer
Low Error Voltage
No High-Temperature
“Run-Away”
High-Voltage Drivers: Relays, Solenoids,
Lamps, Hammers, Displays, Transistors, etc.
Telephone Mute Switches, Ringer Circuits
Power Supply, Converters
Motor Control
Top View
TN2010T (R1)*
*Marking Code for TO-236
G
S
D
2
3
TO-236
(SOT-23)
1
Absolute Maximum Ratings (TA = 25C Unless Otherwise Noted)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 200
V
Gate-Source Voltage VGS 20
V
Continuous Drain Current = 
ID
0.12
(TJ = 150C) = 
I
D0.08 A
Pulsed Drain CurrentaIDM 0.34
Power Dissipation
= 
PD
0.35
W
Power
Dissipation
= 
P
D0.22
W
Maximum Junction-to-Ambient RthJA 357 C/W
Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150 C
Notes
a. Pulse width limited by maximum junction temperature.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70203.
TN2010T
2 Siliconix
S-52426—Rev. C, 14-Apr-97
Specificationsa
Limits
Parameter Symbol Test Conditions Min TypbMax Unit
Static
Drain-SourceBreakdown Voltage V(BR)DSS VGS = 0 V, ID = 100 mA 200 220
V
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 0.25 mA 0.8 1.6 3.0
V
Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA
Zero Gate Voltage Drain Current
IDSS
VDS = 160 V, VGS = 0 V 1
mA
Zero
Gate
Voltage
Drain
Current
I
DSS TJ = –55C 10
mA
On-State Drain CurrentcID(on) VDS = 10 V, VGS = 10 V 0.3 mA
Drain Source On Resistance
c
rDS( )
VGS = 10 V, ID = 0.1 A 9.5 11
W
Drain
-
Source
On
-
Resistancec
r
DS(on) VGS = 4.5 V, ID = 0.05 mA 10 15
W
Forward Transconductancecgfs VDS = 10 V, ID = 0.1 A 300 mS
Diode Forward Voltage VSD IS = 0.085 A, VGS = 0 V 0.8 V
Dynamic
Total Gate Charge Qg1750
Gate-Source Charge Qgs VDS = 100 V, VGS = 10 V, ID ] 0.1 A 275 pC
Gate-Drain Charge Qgd 300
Input Capacitance Ciss 35
Output Capacitance Coss VDS = 25 V, VGS = 0 V, f = 1 MHz 6pF
Reverse Transfer Capacitance Crss 2
Switchingd
Turn On Time
td(on) 4
Turn
-
On
Time
trVDD =60 V,R
L= 600 W
ID^01AV
GEN
=
10 V
16
ns
Turn
-
Off Time
td(off)
ID^0
.
1A
,
VGEN =10V
RG=6W16
ns
Turn
-
Off
Time
tf45
Notes
a. TA = 25C unless otherwise noted.
b. For DESIGN AID ONLY, not subject to production testing.
c. Pulse test: PW v300 ms duty cycle v2%.
d. Switching time is essentially independent of operating temperature.
TN2010T
Siliconix
S-52426—Rev. C, 14-Apr-97 3
Typical Characteristics (25C Unless Otherwise Noted)
0
0.1
0.2
0.3
0.4
0.5
0246810
0
4
8
12
16
20
0 500 1000 1500 2000 2500 3000 3500 4000 0.5
1.0
1.5
2.0
2.5
–50 –25 0 25 50 75 100 125 150
0
4
8
12
16
0 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0
20
40
60
80
100
0 5 10 15 20 25
0
0.1
0.2
0.3
0.4
0.5
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Output Characteristics Transfer Characteristics
Gate Charge
On-Resistance vs. Drain Current
VDS – Drain-to-Source Voltage (V)
– Drain Current (A)ID
VGS = 10 V
VGS – Gate-to-Source Voltage (V)
– Drain Current (A)ID
TC = –55C
125C
– Gate-to-Source Voltage (V)
Qg – Total Gate Charge (pC)
VDS – Drain-to-Source Voltage (V)
C – Capacitance (pF)
VGS
Crss
Coss
Ciss
VDS = 100 V
ID = 100 mA
– On-Resistance (rDS(on)
ID – Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
VGS = 10 V
ID = 100 mA
TJ – Junction Temperature ( C)
(Normalized)
– On-Resistance (rDS(on)
VGS = 4.5 V
VGS = 10 V
4 V
2.0 V
2.2 V
2.4 V
2.6 V
2.8 V
3.0 V
3.2 V
3.4 V
25C
VGS = 4.5 V
ID = 50 mA
TN2010T
4 Siliconix
S-52426—Rev. C, 14-Apr-97
Typical Characteristics (25C Unless Otherwise Noted)
0.001
0.010
0.100
1.000
10.000
0.30 0.45 0.60 0.75 0.90 1.05 1.20
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
– On-Resistance (rDS(on) W)
VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V)
– Source Current (A)IS
TJ – Temperature (C)
9
9.5
10.0
10.5
11.0
11.5
12.0
3 5 7 9 11 13 15 17 19
–0.5
–0.4
–0.3
–0.2
–0.1
–0.0
0.1
0.2
0.3
–75 –50 –25 0 25 50 75 100 125 150
TJ = 150C
TJ = 25C
rDS @ ID = 100 m A
ID = 250 mA
Variance (V)VGS(th)
rDS @ ID = 50 m A