©2002 Fairchild Semiconductor Corporation Rev. B, October 2002
KSB772
PNP Epitaxial Si licon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
* PW≤10ms, Duty Cycle≤50%
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse T est: PW≤350µs, Duty Cycle≤2%
hFE Classificntion
Symbol Parameter Value Units
VCBO Collector-Base Voltage - 40 V
VCEO Collector-Emitter Voltage - 30 V
VEBO Emitter-Base Voltage - 5 V
ICCollector Current (DC) - 3 A
ICP *Collector Current (Pulse) - 7 A
IBBase Current (DC) - 0.6 A
PCCollector Dissipation (TC=25°C) 10 W
Collector Dissipation (Ta=25°C) 1W
Rθja Junction to Ambient 132 °C/W
Rθjc Junction to Case 13.5 °C/W
TJJunction Temperature 150 °C
TSTG Storage Temperature - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
ICBO Collector Cut-off Current VCB = - 30V, IE = 0 - 1 µA
IEBO Emitter Cut-off Current VEB = - 3V, IC = 0 - 1 µA
hFE1
hFE2
* DC Current Gain VCE = - 2V, IC = - 20mA
VCE = - 2V, IC = - 1A 30
60 220
160 400
VCE(sat) * Collector-Emitter Saturation Voltage IC = - 2A, IB = - 0.2A - 0.3 - 0.5 V
VBE(sat) * Base-Emitter Satur ation Voltage IC = - 2A, IB = - 0.2A - 1.0 - 2.0 V
fT Current Gain Bandwidth Product VCE = - 5V, IE = - 0.1A 80 MHz
Cob Output Capacitance VCB = - 10V, IE = 0
f = 1MH z 55 pF
Classification R O Y G
hFE2 60 ~ 120 100 ~ 200 160 ~ 320 200 ~ 400
KSB772
Audio Frequency Power Amplifier
• Low Speed Switching
• Complement to KSD882
1TO-126
1. Emitter 2.Collector 3.Base
©2002 Fairchild Semiconductor Corporation
KSB772
Rev. B, October 2002
Typical Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Base-Emitter Saturation Vo ltage
Collector-Emitter Saturation Voltage Figure 4. Collector Output Capacitance
Figure 5. Current Gain Bandwidth Product Figure 6. Safe Operating Area
0 -4 -8 -12 -16 -20
-0.4
-0.8
-1.2
-1.6
-2.0
IB = -2mA
IB = -10mA
IB = -5mA
IB = -3mA
IB = -8mA
IB = -9mA
IB = -6mA
IB = -1mA
IB = -7mA
IB = -4mA
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
-1 -10 -100 -1000 -10000
1
10
100
1000 VCE = -2V
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
-1 -10 -100 -1000 -10000
-1
-10
-100
-1000
-10000
VCE(sat)
VBE(sat)
IC = 10·IB
VCE(sat),VBE(sat)[mV] SATURATION VOLTAGE
IC[mA], COLLECTOR CURRENT
-1 -10 -100
1
10
100
1000 IE = 0
f=1MHz
Cob[pF], CA PA CIT AN C E
VCB[V], COLLECTOR-BASE VOLTAGE
-0.01 -0.1 -1
1
10
100
1000 VCE=5V
fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT
IC[A], COLLECTOR CURRENT
-1 -10 -100
-0.01
-0.1
-1
-10
IC MAX(D C )
IC MAX(Pulse)
10ms
1ms
100us
VCEOMAX
s/b Limited
Dissipation
Limited
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
©2002 Fairchild Semiconductor Corporation
KSB772
Rev. B, October 2002
Typical Characteristics (Continued)
Figure 7. Derating Curve of Safe Operating Areas Figure 8. Power Derating
25 50 75 100 125 150 175 200
0
20
40
60
80
100
120
140
160
Dissipation Limited
s/b Limited
dT[%], Ic DERATING
TC[oC], CASE TEMPERATURE
25 50 75 100 125 150 175 200
0
2
4
6
8
10
12
14
16
PC[W], POWE R DISSI PATIO N
TC[oC], CASE TEMPERATURE
Package Dimensions
KSB772
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. B, October 2002
3.25 ±0.20
8.00 ±0.30
ø3.20 ±0.10
0.75 ±0.10
#1
0.75 ±0.10
2.28TYP
[2.28±0.20] 2.28TYP
[2.28±0.20]
1.60 ±0.10
11.00 ±0.20
3.90 ±0.10
14.20MAX
16.10 ±0.20
13.06 ±0.30
1.75 ±0.20
(0.50)
(1.00)
0.50 +0.10
–0.05
TO-126
©2002 Fairchild Semiconductor Corporation Rev. I1
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Definition of Terms
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Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
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