2DD2679
Document number: DS31629 Rev. 2 - 2 1 of 4
www.diodes.com December 2008
© Diodes Incorporated
2DD2679
NEW PRODUCT
LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Complementary PNP Type (2DB1714) Available
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: SOT89-3L
• Case Material: Molded Plastic, "Green” Molding Co mpound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.072 grams (approximate)
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO 30 V
Collector-Emitter Voltage VCEO 30 V
Emitter-Base Voltage VEBO 6 V
Peak Pulse Current ICM 4 A
Continuous Collector Current IC 2 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) @ TA = 25°C PD 0.9 W
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C R
θ
JA 139 °C/W
Power Dissipation (Note 4) @ TA = 25°C PD 2 W
Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25°C R
θ
JA 62.5 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Conditions
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage V
(
BR
)
CBO 30 ⎯ ⎯ V IC = 10μA, IE = 0
Collector-Emitter Breakdown Voltage (Note 5) V
(
BR
)
CEO 30 ⎯ ⎯ V IC = 1mA, IB = 0
Emitter-Base Breakdown Voltage V
(
BR
)
EBO 6 ⎯ ⎯ V IE = 10μA, IC = 0
Collector Cut-Off Current ICBO ⎯ ⎯ 0.1 μA VCB = 30V, IE = 0
Emitter Cut-Off Current IEBO ⎯ ⎯ 0.1 μA VEB = 6V, IC = 0
ON CHARACTERISTICS (Note 5)
Collector-Emitter Saturation Voltage VCE
(
SAT
)
⎯ 80 370 mV
IC = 1.5A, IB = 75mA
DC Current Gain hFE 270 ⎯ 680 ⎯ V
CE = 2V, IC = 200mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Cobo ⎯ 11 ⎯ pF VCB = 10V, IE = 0,
f = 1MHz
Current Gain-Bandwidth Product fT ⎯ 240 ⎯ MHz VCE = 2V, IC = 100mA,
f = 100MHz
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/pr oducts/lead_free/index .php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Device mounted on FR-4 PCB with 1 inch2 Copper pad layout.
5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
Top View Device Schematic Pin Out Configuration
4
3
2
1
CC
B
E
TOP VIEW
3
1
2,4
COLLECTOR
EMITTER
BASE
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2DD2679
Document number: DS31629 Rev. 2 - 2 2 of 4
www.diodes.com December 2008
© Diodes Incorporated
2DD2679
NEW PRODUCT
0
0.4
0.8
25 50 75 100 125 150
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N
(mW)
D
T , AMBIENT TEMPERA TURE (°C)
Fig. 1 Power Dissipation vs.
Am bi ent Tem per at ure
A
1.2
1.6
2.0
0
0.1 1 10 100
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 2 Typical Collector Current
vs . C ollect or -Em itter Voltage (Note 3)
0.001
0.01
0.1
1
10
I,
C
O
LLE
C
T
O
R
C
U
R
R
EN
T
(A)
C
DC
Pw = 100ms
Pw = 10ms
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
012345
V , CO LL ECT OR-EMITTER VOLTAGE ( V)
CE
Fig. 3 Typical Collector Current
vs. Collector-Emitter Volt age
I,
C
O
LLE
C
T
O
R
C
U
R
R
EN
T
(A)
C
I = 1mA
B
I = 2mA
B
I = 3mA
B
I = 4mA
B
I = 5mA
B
1 10 100 1,000 10,000
I , COLLECTOR CURRENT (mA)
C
Fig. 4 T y pical DC Current Gain vs. Collector Current
10
100
1,000
h, D
C
C
U
R
R
EN
T
G
AIN
FE
T = 150° C
A
T = 25° C
A
T = - 55°C
A
T = 85°C
A
V = 2V
CE
0.01
0.1
1
1 10 100 1,000 10,000
I , COLLECTOR CURRENT (mA)
C
Fig. 5 Typical Collector-Emitter Saturation V oltage
vs. Collector Current
V,
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
SATURA TION
CE(SAT)
VOLTAGE (V)
I/I = 20
CB
T = 85°C
A
T = 25°C
A
T = -55°C
A
T = 150°C
A
1 10 100 1,000 10,000
I , COLLECTOR CURRENT (mA)
C
Fig. 6 Typical Base-Emitter Turn-On Voltage
vs. C ollector Cu r r ent
0
0.2
0.4
0.6
0.8
1.0
1.2
V , BASE-EMI
T
T
E
R
T
U
R
N-
O
N V
O
L
T
A
G
E (V)
BE(ON)
T = 150° C
A
T = 25° C
A
T = - 55°C
A
T = 85° C
A
V = 2V
CE
2DD2679
Document number: DS31629 Rev. 2 - 2 3 of 4
www.diodes.com December 2008
© Diodes Incorporated
2DD2679
NEW PRODUCT
1 10 100 1,000 10,000
I , COLLECTOR CURRENT (mA)
C
Fig. 7 Ty pical Base-Emitter Saturation Voltage
vs. Collector Current
0
0.2
0.4
0.6
0.8
1.0
1.2
V , BASE-EMI
T
T
E
R
SA
T
U
R
A
T
I
O
N V
O
L
T
A
G
E (V)
BE(SAT)
T = 150°C
A
T = 25°C
A
T = -55°C
A
T = 85°C
A
I = 20
CB
/I
0.1 1 10 100
V , REVERSE VOL TAGE (V)
R
Fig. 8 Typical Capacitance Characteristics
10
100
1,000
C
A
P
A
C
I
T
AN
C
E (p
F
)
1
C
ibo
C
obo
f = 1MHz
0102030405060708090100
I , COLLECTOR CURRENT (mA)
C
Fig. 9 Typical Gain-Bandwidth Product
vs. Collector Current
1
10
100
1,000
f,
G
AI
N
-BA
N
DWID
T
H
P
R
O
D
U
C
T
(M
H
z)
T
V = 2V
f = 100MHz
CE
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
Fig. 10 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.001
0.01
0.1
1
r(t),
T
R
ANSIEN
T
T
H
E
R
MAL
R
ESIS
T
AN
C
E
T - T = P * R (t)
Duty Cycle, D = t /t
JA JA
12
θ
R (t) = r(t) *
θ
JA
R
R = 133°C/W
θ
θ
JA
JA
P(pk) t
1
t
2
D = 0.7
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.5
2DD2679
Document number: DS31629 Rev. 2 - 2 4 of 4
www.diodes.com December 2008
© Diodes Incorporated
2DD2679
NEW PRODUCT
Ordering Information (Note 6)
Part Number Case Packaging
2DD2679-13 SOT89-3L 2500/Tape & Reel
Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
Package Outline Dimensions
Suggested Pad Layout
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume an y liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages. LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
SOT89-3L
Dim Min Max Typ
A 1.40 1.60 1.50
B 0.45 0.55 0.50
B1 0.37 0.47 0.42
C 0.35 0.43 0.38
D 4.40 4.60 4.50
D1 1.50 1.70 1.60
E 2.40 2.60 2.50
e — — 1.50
H 3.95 4.25 4.10
L 0.90 1.20 1.05
All Dimensions in mm
Dimensions Value (in mm)
X1 1.7
X2 0.9
X3 0.4
Y1 2.7
Y2 1.3
Y3 1.9
C 3.0
2679 = Product Type Marking Code
YWW = Date Code Marking
Y = Last digit of year (ex: 8 = 2008)
WW = Week code 01 - 52
e
D
H
L
A
C
E
8° (4X)
B1
B
D1
R0.200
Y1
X3 X2
X1
Y3 Y2
C
2679
YWW
