IP4220CZ6
Dual USB 2.0 Integrated ESD
protection to IEC 61000-4-2 level 4
INTEGRATED DISCRETE
S
Product Specification 2005 January 05
Philips
Semiconductors
Philips Semiconductors
Dual USB 2.0
Product S
p
ecification
Integrated ESD Protection
IP4220CZ6
FEATURES
ESD IEC 61000-4-2 level 4,
± 8kV contact discharge compliant protection
Four ultra-low input capacitance (1 pF typ.)
ESD rail-to-rail protection diode s
Low voltage clamping due to integrated Zener
diode
Small 6 lead SO6 (SOT457) package
APPLICATIONS
General-purpose downstream ESD protection high
frequency analog signal s and high-speed serial data
transmission for ports inside:
Cellular and PCS mobile handsets
PC-/Notebook USB2.0/IEEE1394 ports
DVI interfaces
Cordless telephones
Wireless data (WAN/LAN) systems
PDAs
DESCRIPTION
The IP4220CZ6 is designed to prote ct I/Os bei ng
sensitive concerning capa citive load, su ch as
USB 2.0, Ethernet, DVI etc. from destruction by
Electro Static Discharges (ESD).
Therefore, the IP4220CZ6 incorporates four pairs of
ultra-low capacity rail-to-rail diodes plus an
additional Zener diode to provide prote ction to
downstream signal and supply components from
Electrostatic Discharge (ESD) voltages as high as
±8 kV contact discharge.
Due to the rail-to-rail diodes being co nnected to the
Zener diode, the protection is working independent
form the availability of a supply voltage.
The IP4220CZ6 is fabricated usi ng thin film-on-
silicon technology and integrates 4 ultra-low cap acity
rail-to-rail ESD protection diodes in a m iniature
6-lead SOT457 package.
Figure 1: IP4220CZ6
schematic and pinning diagram
6
1
5
2
4
3
2005 January 05 2
Philips Semiconductors
Dual USB 2.0
Product S
p
ecification
Integrated ESD Protection
IP4220CZ6
ABSOLUTE MAXIMUM RATINGS
SYMBOL PARAMETER TEST CONDITIONS MIN MAX UNIT
VI/O DC input voltage range 0 +5.5 V
ESD Electrostatic Discharge,
all pins
IEC 61000-4-2, Level 4,
Contact
-8
+8
kV
Tstg Device storage temperature range -55 +125 °C
RECOMMENDED OPERATING CONDITIONS
MIN MAX UNIT
Operating temperature range -40 +85 °C
ELECTRICAL CHARACTERISTICS
Tc = 25°C unless otherwise specified
SYMBOL PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
CI/O Pin capacitance to ground,
Pins 1, 3, 4, 6 Vdc = 0 V; f = 1 MHz
Pin 5 = +3.0 V - 1.0 - pF
Ilkg Diode reverse leakage current,
Pins 1, 3, 4, 6 to ground V = + 3.0V - - 100 nA
CZener Zener diode capacitan ce to
ground, Pin 5 to 2 Vdc = 0 V; f = 1 MHz
Pin 5 = +3.0 V - 40 - pF
VBR I/O Zener diode breakdown voltage,
Pin 5 to 2 I = 1mA 6 - 9 V
VFForward voltage - 0.7 - V
2005 January 05 3
Philips Semiconductors
Dual USB 2.0
Product S
p
ecification
Integrated ESD Protection
IP4220CZ6
Application Information
Universal Serial Bus 2.0 protection
The IP4220CZ6 is optimized to protect e.g. two USB 2.0 ports of Electro-Static-Disch arge (ESD).
Each device is capable of prote ction both USB data lines and the VBUS supply.
A typical application is shown in the schematic below.
VBUS
D+
D -
GND
VBUS
GND
USB 2.0
IEEE1394
Controller
1
6
VBUS
D+
D -
GND
Figure 2: Typical application of IP4220CZ6
2005 January 05 4
Philips Semiconductors
Dual USB 2.0
Product S
p
ecification
Integrated ESD Protection
IP4220CZ6
PACKAGE OUTLINE
Plastic small outline package; 6 leads; body width 1.5 mm SOT457
Figure 3: IP4220CZ6 outline dimensions
2005 January 05 5
Philips Semiconductors
Dual USB 2.0
Product S
p
ecification
Integrated ESD Protection
IP4220CZ6
DEFINITIONS
Data Sheet
Identification Product Status Definition
Objective Specification
Formative or in Design This data sheet contains the target or goal specifications for
product development. Specifications may change in any
manner without notice.
Preliminary Specification
Preproduction Product This data sheet contains preliminary data, and
supplementary data will be published at a later date. Philips
Semiconductors reserves the right to make changes at any
time without notice in order to improve the design and supply
the best possible product.
Product Specification
Full Production This data sheet contains Final Specifications. Philips
Semiconductors reserves the right to make changes at any
time without notice in order to improve the design and supply
the best possible product.
Philips Semiconductors and Philips Electronics North America Corporation reserve the right to make changes,
without notice in the products, including circuits, standard cells, and/or software, described or contained herein in
order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the
use of any of these products, conveys no lic ense or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are free from patent, copyright, or
mask work infringement, unless otherwise specified. Applications that are described herein for any of these
products are for illustrative purposes o nl y. Philips Semiconductors makes no representation or warranty that
such applications will be suitable for the sp ecified use without further testing or modification.
LIFE SUPPORT APPLICATIONS
Philips Semiconductors and Philips Electronics North America Corporation Products are not designed for use in
life support appliances, devices, or s ystems where malfunction of a Philips Semiconductors and Philips
Electronics North America Corporation Product can reasonab ly be expected to result in a personal inj ury. Philips
Semiconductors and Philips E lectronics North America Corporation customers using or selling Philips
Semiconductors and Philips E lectronics North America Corporat ion Products for use in such applications do so at
their own risk and agree to fully indemnify Philips Semic onductors and Philips Electronics North America
Corporation for any damages resulti ng from such improper use or sale.
2005 January 05 6