DF2S6.8FS ESD Protection Diodes Silicon Epitaxial Planar DF2S6.8FS 1. Applications * ESD Protection Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation. 2. Packaging and Internal Circuit 1: Cathode 2: Anode SOD-923 1: Cathode 2: Anode fSC The SOD-923 package is recommended. Package Product name SOD-923 DF2S6.8FS,L3M (Note 1) fSC DF2S6.8FS,L3J , DF2S6.8FS,L3F Note 1: The product name of the devices housed in the SOD-923 package are suffixed with the "M". Start of commercial production 1 2003-04 2014-07-09 Rev.5.0 DF2S6.8FS ) 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 25 Characteristics Symbol Electrostatic discharge voltage (IEC61000-4-2)(Contact) Rating Unit VESD 30 kV Junction temperature Tj 150 Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ) 4. Electrical Characteristics (Unless otherwise specified, Ta = 25 25 VRWM: Working peak reverse voltage VZ: Zener voltage VBR: Reverse breakdown voltage ZZ: Dynamic impedance IZ: Zener current IBR: Reverse breakdown current IR: Reverse current VC: Clamp voltage IPP: Peak pulse current RDYN: Dynamic resistance IF: Forward current VF: Forward voltage Fig. 4.1 Definitions of Electrical Characteristics Characteristics Symbol Note Test Condition Min Typ. Max Unit Working peak reverse voltage VRWM 5 V Zener voltage (Reverse breakdown voltage) VZ (VBR) IZ = 5 mA (IBR) 6.4 6.8 7.2 V Dynamic impedance ZZ IZ = 5 mA (IBR) 30 Reverse current IR VRWM = 5 V 0.5 A Clamp voltage Dynamic resistance Total capacitance VC RDYN Ct (Note 1) IPP = 1 A 9 V (Note 2) 0.7 25 pF VR = 0 V, f = 1 MHz Note 1: Based on IEC61000-4-5 8/20 s pulse. Note 2: TLP parameter: Z0 = 50 , tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns, extraction of dynamic resistance using a least-squares fit of TLP characteristics at IPP between 3 A to 8 A. 2 2014-07-09 Rev.5.0 DF2S6.8FS 5. Guaranteed ESD Protection (Note) Test Condition ESD Protection IEC61000-4-2 (Contact discharge) 30 kV Note: Criterion: No damage to devices. 6. Marking Fig. 6.1 Marking 7. Land Pattern Dimensions (for reference only) Fig. 7.1 SOD-923 (unit: mm) Fig. 7.2 fSC (unit: mm) 3 2014-07-09 Rev.5.0 DF2S6.8FS 8. Characteristics Curves (Note) Note: Fig. 8.1 IZ - VZ (IBR - VBR) Fig. 8.2 IR - VR Fig. 8.3 Ct - VR Fig. 8.4 Ct - f The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. 4 2014-07-09 Rev.5.0 DF2S6.8FS 9. Clamp Voltage VC - Peak Pulse Current (IPP) (Note) Fig. 9.1 VC - IPP Note: Fig. 9.2 Based on IEC61000-4-5 8/20 s pulse. The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. 10. Insertion Loss (S21) (Note) Fig. 10.1 S21 - f Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. 5 2014-07-09 Rev.5.0 DF2S6.8FS 11. ESD Clamp Waveform (Note) Fig. 11.1 +8 kV Fig. 11.2 -8 kV Fig. 11.3 IEC61000-4-2(Contact) Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. 6 2014-07-09 Rev.5.0 DF2S6.8FS Package Dimensions Unit: mm The shapes and dimensions of the package vary, depending on the manufacturing plant. For details, contact the Toshiba sales representative. Weight: 0.55 mg (typ.) Package Name(s) TOSHIBA: 1-1AH1A Nickname: SOD-923 7 2014-07-09 Rev.5.0 DF2S6.8FS Package Dimensions Unit: mm The shapes and dimensions of the package vary, depending on the manufacturing plant. For details, contact the Toshiba sales representative. Weight: 0.6 mg (typ.) Package Name(s) TOSHIBA: 1-1L1S Nickname: fSC 8 2014-07-09 Rev.5.0 DF2S6.8FS RESTRICTIONS ON PRODUCT USE * Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. * Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. 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