HA13703A we IPIC High Side Inductive Load Driver Preliminary HITACHI Description (IPIC: Intelligent Power IC) HA13703A is high side power driver IC with protectors and diagnostic function. The device is especially designed to switch inductive loads. Functions Power MOS source follower output (4 A) With over voltage shut down circuit (OVSD) With over current protector circuit (OCSD) With over temperature shut down circuit (OTSD) With diagnostic circuit and status output With fail safe function under input open circuit condition With low voltage inhibit circuit (LVI) With output negative voltage clamp circuit Features Protected against 60 V load dump condition Low Ron (0.1 typ) Wide operating supply voltage range (Vpp = 7 V to 25 V) High sustaining voltage (15 V) Protected against reverse supply voltage (-13 V) Protected against short circuit condition Suitable switching speed to have high speed operation and low EMI Input compatible with TTL, LS-TTL, or 5 V CMOS Protected against electrostatic discharge (2 kV min at 100 pF/1.5 kQ) Pin Arrangement SP-5TA O) HA13703A oro | vo | out INPUT STATUS (Top view) Figure 1 Pin Arrangement Ordering Information Type No. Package HA13703A SP-STAHA13703A Block Diagram G) DD e (3 v LVI Charge Voltage | OVvsD *| pump clamp i INPUT 2) OUT . - +e < WT | da} Freq Latch V OSC |-* divider | hs ref _ Band OTSD Open, short to gap ref , Tl V pp detector 160 | STATUS ALARM (4 am at 150C t--~_ ft <4 | | (1) Figure 2 Block Diagram 2 @ HITACHIHA13703A ~ Function Description Peak Current and Turn-off Time Figure 3 shows waveforms of load current (lout) and output voltage (Vout) at driving inductive load. The peak output current (Ip) and sustaining time (tsys) can be described as Ip = VDD (1 ef toy (1) R L Ip-R - 2 {sus zm Gt VB ) (2) Where R : Equivalent resistance of the load L_: Equivalent inductance of the load HA13703A has the internal protector to prevent turn on during tsus period. Table 1 Truth Table Mode In Out Status Normal L L H H H H Load short L L H H L L Load open L L H H H L Short to Vpp L H L H H L OTSD af L L L H L L OVSD *2 L L L H L L LVI *3 L L H H L H Note: L: Low level (0.8 V) H: High level (2.0 V) *1) OTSD: Over temperature shut down *2) OVSD: Over voltage shut down *3) LVI: Low voltage inhibit Hi Vin Low ton, . _ T > Ip lout 0 > < tsus <Vpp Vout 0 Figure 3 Peak Current and Turn-off Time @ HITACHIHA13703A Application Vec von C1 1 5V SZ) rr CMOS logic = Ro (5)}0~o circuit a) swe 1 | | 3 L Ao i Vv Za " Y Figure 4 Solenoid Drive with Switched Power Supply D1 & Za: The external voltage clamp circuit using D1 & Za are necessary to protect the HA13703A when SW2 switches under normal operating conditions. D1 & Za must be in parallel with the load. The zener voltage (Vzp) and forward diode voltage (Vp)) must satisfy the following: Vp1 + Vzp < 15 V V(sus) min) (3) R1: When SW1 opens with output ON, the Input (Pin 2) may be shorted to GND. In this case, RI will limit the current from logic circuits at pin 2. R2: Pull up resistor at Status output. C1: When SW1 opens with Output ON, the energy stored in the load L can not be dissipated through Vpp. Therefore, C1 must be able to absorb this energy, and can be selected from 2 ) (4) Cl>Lec Vpp Note that when using D1 & Za clamp, it may not be necessary to use as large a capacitor as described above. In this case, C1 must have the value to compensate the inductance at Vpp line (refer equation 4) and should be located near the device. Reverse Battery Under reverse battery condition, the HA13703A will dissipate power (Pp") because of current through the intrinsic diode on power MOS. Pp can be calculated as follows and must not exceed the absolute maximum rating on power dissipation. * VYpp VF@) Pp = R * VF(B) (5) Where Vpp* = reverse battery voltage VFR) = forward intrinsic diode voltage R = equivalent resistance of the load The input and'status voltage must not exceed the absolute maximum rating (0.3 V) in reverse battery condition. 4 HITACHIHA13703A Table 2 Absolute Maximum Ratings (Ta = 25C) Item Symbol HA13703A Unit Note Continuous supply voltage Vop -13 to 35 Vv 1 Transient supply voltage Vpp 60 Vv 2 Input voltage VIN -0.3 to 15 Vv Output voltage Vout -15 to Vpb Vv Status voltage Vs -0.3 to 15 Vv Output current lout A 3 Status current Is 5 mA Power dissipation Py Ww 4 Package thermal Junction to case Bjc 5 C/W resistance Junction to air Oja 70 CWW Junction temperature range Tj 40 to OTSD C 5 Storage temperature range Tstg 55 to 150 C Notes: 1. Recommended operating voltage: Vop =7 to 16 V (Normal) 16 to 25 V (Jump start) 2. Load dump condition (Refer to figure 5) 3. Refer to ASO data (figure 6) Internally limited at Short circuit condition ; !p = 10A Over voltage condition ; Vpp 2 26V Maximum power dissipation (PT(Max)) can be defined as: P1(MAX) = (Tjopr(MAX) Tambient)/(8jc + 8ca) 6ca: Thermal resistance between case and air (Depend on he Junction temperature operating range Tjopr = 40 to +125 C at sink size) 14V t V=14+46e *" 100 30 10 Drain Current Ip (A) wo 1.0 0.3 0.1 01 #03 1.0 3 10 30 100 Drain Source Voltage Vps (V) Figure 5 Load Dump Condition @ HITACHI Figure 6 Output Transistor Area of Safe Operation (Reference Data)HA13703A Table 3 Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test condition Pin Note Operating supply voltage Vpp 7 _ 25 V 3 Quiescent current Ipp1 _ 3.0 8.0 mA Vin =0V, 3 out = open Ipp2 _ 6.0 10.0 mA Vin = 5.5 V, 3 out = open Output ON Resistance Rps(on) _ 0.10 0.15 Oo la=4A 5 (@Tj = 40 to 25C) _ 0.15 0.22 Q lo=4A 5 (@Tj = 125C) Output leak current ILEAK _ 5 mA Von =35V,Vin=OV 5 Tj = 125C Input threshold voltage VIL _ _ 08 V 2 VIH 2.0 _ V 2 Input current Mie -10 _ 60 pA Vin = 0 to 0.8 V 2 liq 5 35 60 pA Vin = 2.0 to 5.5 V 2 Propagation delay time Ta(on) _ 5 _ ps la=3A 2,5 Tr 20 _ ps 5 Ta(OFF) _ 10 _ US 2,5 Tf _ 5 _ us 5 Open detect threshold current lop 0.3 0.7 1.2 A 4,5 Current limiter operating level les 10 20 30 A Rt = short 5 6 Low voltage inhibit operating level LVI _ 5 6 V Over voltage Operating level OVSD 26 30 33 V 3 shutdown Hysteresis Vvs 025 #05 10 V 3 Output sustain voltage Visus) -21 -18 -15 V lo=25 mA 5 Over Operating level OTSD _ 175 _ C 5 7 temperature OTSD _ 150 _ 4 7 shut down (Alarm) Hysteresis Tuys _ 15 _ C 5 7 Status on voltage Vst 0.1 0.4 V Is=1mA 4 Status leak current Is(Leak) _ _ 100 pA Vs =5.5V 4 Notes: 6. Output current will be constant pulse width controlled under current limit condition 7. Design parameter only (not production tested) @ HITACHIHA13703A Vcc CPU lout Vout STATUS Vop TH wy INPUT OUTPUT b) = HA13703A Negative voltage clamp (15 V MAX) GND Output short Normal to GND ne | | Figure 7 Solenoid Drive Application and Output Waveform (mA) Quiescent current | pp Ta = 25C Load OPEN 1 r 10 20 Supply voltage Vpp 30 (V) 0.3 5 lout=4A g 02+ z a B Tj = 125C = Tj = 25C B 01F 5 Tj =40C oO 0 se 1 1 . 7 10 15 20 25 40 Supply voltage Vpp = (V) Figure 8 Ipp vs. Vpp Figure 9 Rpsc(ONn) vs. Vp> @ HITACHI 7HA13703A So a7 n : Tj = 125C 0 7) = 25C 0 67 10 15 20 25 7}. -40C Supply voltage Vpp = (V) _ 2.07 Vpp=12V S Vpp = 12V 76 lout. =3A =z = >, g a2 1575 2 > 7 48 @ Da 2 _ s 3 o > > & z= gs | 2 10+ 3 -20 on YO iS 3 2 > 2 O20 0.5 40 0 50 100 150 0 40 0 5 0 100 15 6 Junction temperature Tj (C) Junction temperature Tj (C) Figure 10 Vi, Vin vs. Tj Figure 11 V(sus) vs. Tj 80 @ = lout = 3A = = g 30 lout=3A = F 60} rm 3 2 P20 o o 40 Td (OFF) = = 3 8 Tj = 125C 8 tr 8S 10 ; T)=25C 5 = Tj =40C Z *| Tj= 125C { a eee j= 125 2 T= 25C 9 Ta (ON) 7 * on o Cc J | = 25C a _An? * T= -40C 9g 1 1 \ Y= 40C oa SS 0 7 10 15 20 25 Supply voltage Vop_ (V) Figure 12 Tdon), Tr vs. Vpp @ HITACHI Figure 13. Tacorr), Tf vs. VopHA13703A Vpp = 12V 0.4 + ze 25+ Vpp=12V Ig =1mA 8 = = = 3} z _ = 20+ 2 a o 5 2 o2 | 8 3 2 5 WF 8 = 6s OF 5 ot. | | ol | . . 40 0 50 100 150 40 0 50 100 150 Junction temperature Tj (C) Junction temperature Tj (C) Figure 14 Ics vs. Tj Figure 15 Vsti vs. Tj 10 Vop = 12V , < = ~ = a _ 5 = 0.8 + 6 S g = eee 2 a ~~ 2 2 0.6 + 5 eee 8 2, = ~~ oO D > oa = 5 04t 34 Qa t \. 0 1 1 1 : : 19 L____ , . . 40 0 50 100 150 Junction temperature Tj (C) 40 0 50 100 150 Junction temperature Tj (C) Figure 16 lop vs. Tj . @ HITACHI Figure 17 LVI vs. TjHA13703A 1K + S @ 800 + e = STATUS indicate H @ 600 + 6 Oo _ Ss @ 400 + 2a Tj = 125C 6 200 fF Tj = 25C STATUS indicate L (short to V owt Tj = 40C 0 Set L ! i 1 7 10 15 20 25 Supply voltage Vpp_(V) Figure 18 Output to Vpp Resistance vs. Supply Voltage Ta = 25C uaaerann 7a) oon ee Ae (A) Reverse drain current coer seee ST aa Source to drain voltage Figure 19 Reverse Drain Current vs. Source to Drain Voltage on Power MOS 10 @ HITACHIHA13703A Package Dimensions * Unit: mm (inch) 5Pin 10003 932402 2.79 + 0.15 (0.110 +0.006) (0.394 + 0.012) [0.126 + 0.008) | 2540.2 (0.098 + 0.008) 1e!-0 $0.3, 2.1 +0.2 (0.083 + 0.008) (0.276 + 0.012) at | x _ Se} 7 [ 0 ol S = 7 ( 4 # qi i S| sls ol PD SI ald Ol SIs = + o N/S OS | 2 o Ss = J 2 ! ' 2s| 3 4.44 + 0.2 S| a + (01750008) [7 [25202 0.4 + 0.1 (0.098 + 0.008) \ | q 1 5 v 1.7 (0.067 1.0 max | 4.5 (0.177) 3.4 (0.134) 8.2 (0.323) Hitachi Code SP-5TA EIAJ JEDEC @ HITACHI 11When using this document, keep the following in mind: 1. 2. This document may, wholly or partially, be subject to change without notice. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachis permission. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the users unit according to this document. Circuitry and other examples described herein are meant merely to indicate the characteris- tics and performance of Hitachis semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachis sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachis products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. HITACHI Our Standards Set Standards Hitachi America, Ltd. Semiconductor & |.C. Division Hitachi Plaza 2000 Sierra Point Parkway, Brisbane, CA 94005-1819 1-415-589-8300 1090/1 M/GVC/RB Copyright 1990, Hitachi America, Ltd. Printed in U.S.A. Order Number: M60T010 JAN 3 1991