Hardware
Documentation
Programmable Linear
Hall-Effect Sensor
HAL® 817
Edition Sept. 22, 2011
DSH000156_002EN
Data Sheet
HAL 817 DATA SHEET
2Sept. 22, 2011; DSHDSH000156_002EN Micronas
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Any information and data which ma y be provided in the
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and actual performance may vary over time.
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Micronas Trademarks
–HAL
Micronas Patents
Choppered Offset Compensation protected by
Micronas patents no. US5260614A, US5406202A,
EP0525235B1 and EP0548 391B1
Third-Party Trademarks
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Contents
Page Section Title
DATA SHEET HAL 817
Micronas Sept. 22, 2011; DSHDSH000156_002EN 3
4 1. Introduction of the HAL817
4 1.1. Major Applications
41.2.Features
5 1.3. Marking Cod e
5 1.4. Operat i ng Jun ctio n Te m pe r ature Range (TJ)
5 1.5. Hall Sensor Package Codes
5 1.6. Solderability and Welding
5 1.7. Pin Connections and Short Descriptions
6 2. Functional Descriptio n
6 2.1. General Function
8 2.2. Digital Signal Processing and EEPROM
10 2.3. Calibration Procedure
10 2.3.1. General Procedure
11 2.3.2. Calibration of the Angle Sensor
13 3. Specifications
13 3.1. Ou tline Dimensions
17 3.2. Dimensions of Sensitive Area
17 3.3. Package Parameters and Position of Sensitive Areas
17 3.4. Absolute Maximum Ratings
18 3.4.1. Storage and Shel f Life
18 3.5. Recommended Operating Conditions
19 3.6. Characteristics
20 3.7. Thermal Characteristics
20 3.8. Magnetic Characteristics
20 3.9. Open-Circuit Detection
20 3.10. Overvoltage and Undervoltage Detection
21 3.11. Typical Characteristics
23 4. Application Notes
23 4.1. Application Circuit
23 4.2. Use of two HAL817 in Parallel
23 4.3. Temperature Compensation
24 4.4. Ambient Temperature
24 4.5. EMC and ESD
25 5. Programming of the Sensor
25 5.1. Definition of Programming Pulses
25 5.2. Definition of the Telegram
27 5.3. Telegram Codes
28 5.4. Number Formats
29 5.5. Register Information
29 5.6. Programming Information
30 6. Data Sheet History
HAL 817 DATA SHEET
4Sept. 22, 2011; DSHDSH000156_002EN Micronas
Pr ogrammable Linear Hall-Effect Sensor
Release Note: Revision bars indicate significant
changes to the previous edition.
1. Introduction of the HAL817
The HAL817 is a member of the Micronas family of
programmable linear Hall sensors. HAL817 replaces
the HAL815 and should be used for new designs. It is
possible to program different sensor s which ar e in par -
allel to the same supply voltage individually.
The HAL817 is an universal magnetic field sensor with
a linear output based on the Hall effect. The IC can be
used for angle or distance measurements if combined
with a rotat ing or mo ving magnet. The major charac ter-
istics like magnetic field range, sensitivity, output qui-
escent voltage (output voltage at B = 0 mT), and out-
put voltage range are programmable in a non-volatile
memory. The sensor has a ratiometric output charac-
teristic, which means that the output voltage is propor-
tional to the magnetic flux and the supply voltage.
The HAL817 features a temperature-compensated
Hall plate with choppered offset compensation, an A/D
converter, digital signal processing, a D/A converter
with output driver, an EEPROM memory with redun-
dancy and lock function f or the calibration data, a serial
interface for programming the EEPROM, and protec-
tion devices at all pins. The internal digital signal pro-
cessing is of great benefit because analog offsets,
temperature shifts, and mechanical stress do not
degrade the sensor accuracy.
The HAL 817 is programmable by modulating the sup-
ply voltage. No additional programming pin is needed.
The easy programmability allows a 2-point calibration
by adjusting the output voltage directly to the input sig-
nal (like mechanical angle, distance, or current). Indi-
vidual adjustment of each sensor during the cus-
tomer’s manufacturing process is possible. With this
calibration proc ed ur e, the tole rance s of th e sen so r, the
magnet, and the mechanical positioning can be com-
pensated in the final assembly. This offers a low-cost
alternative for all applications that presently need
mechanical adjustment or laser trimming f or calibrating
the system.
In addition, the temperature compensation of the Hall
IC can be fit to all common magnetic materials by pro-
gramming first and second order temperature coeffi-
cients of the Hall sensor sensitivity. This enables oper-
ation over the full temperature range with high
accuracy.
The calculation of the individual sensor character istics
and the programming of the EEPROM memory can
easily be done with a PC and the application kit from
Micronas.
The sensor is designed for hostile industrial and auto-
motive applications and operates with typically 5 V
supply voltage in the ambient temperature range from
40 °C up to 150 °C. The HAL 817 is available in the
very small leaded packages TO92UT-1 and TO92UT-2.
1.1. Major Applications
Due to the sensor ’s versatile pr ogr a mming char act eris-
tics, the HAL817 is the optimal system solution for
applications such as:
– contactless potentiometers,
– angle sensors,
– distance measurements,
– magnetic field and current measurement.
1.2. Features
– high-precision linear Hall effect sensor with
ratiometric output and digital signal processing
– multiple programmable magnetic characteristics in a
non-volatile memory (EEPROM) with redundancy
and lock function
– open-circuit (ground and supply line break detec-
tion), overvoltage and undervoltage detection
– f or programming an individual sensor within several
sensors in parallel to the same supply voltage, a
selection can be d one via the output pin
– temperature characteristics are programmable for
matching all common magnetic materials
– programmable clamping function
– programming through a modulation of the supply
voltage
– operates from 40 °C up to 170 °C
junction temperature
– operat es from 4.5 V up to 5.5 V supply voltage in
specification an d fu nc tio ns up to 8.5 V
– operates with sta tic magnetic fields and dynamic
magnetic fields up to 2 kHz
– overvoltage and reverse-voltage protection at all
pins
– magnetic characteristics extremely robust against
mechanical stress
– short-circuit protected push -pull output
– EMC and ESD optimized design
DATA SHEET HAL 817
Micronas Sept. 22, 2011; DSHDSH000156_002EN 5
1.3. Marking Code
The HAL817 has a marking on the package surface
(branded side). This marking includes the name of the
sensor and the temperature range.
1.4. Operating J unction Temperature Range (TJ)
The Hall sensors from Micronas are specified to the
chip temperature (junction temperature TJ).
A: TJ = 40 °C to +170 °C
K: TJ = 40 °C to +140 °C
The relationship between ambient temperature (TA)
and junction temperature is explained in Section 4.4.
on page 24.
1.5. Hall Sensor Package Codes
Example: HAL817UT-A
Type: 817
Package: TO92UT
Temperature Range: TJ = 40 °C to +170 °C
Hall sensors are available in a wide variety of packag-
ing versions and quantities. For more detailed informa-
tion, please refer to the brochure: “Hall Sensors:
Ordering Codes, Packaging, Handling”.
1.6. Sold era bi lit y an d Welding
Soldering
During soldering reflow processing and manual
reworking, a component body temperature of 260 °C
should not be exceeded.
Welding
Device terminals should be compatible with laser and
resistance welding. Please note that the success of
the welding process is subject to different welding
parameters which will vary according to the welding
technique used. A very close control of the welding
parameters is absolutely necessary in order to reach
satisfying results. Micronas, therefore, does not give
any implied or express warranty as to the ability to
weld the component.
1.7. Pin Connections and Short Descriptions
Fig. 1–1: Pin configuration
Type Temperature Range
A K
HAL817 817A 817K
HALXXXPA-T Temperature Range: A, K
Packag e: UT for TO92UT-1/-2
Ty pe : 81 7
Pin
No. Pin Name Type Short Description
1V
DD IN Supply Voltage and
Programming Pin
2 GND Ground
3 OUT OUT Push Pull Output
and Selection Pin
1
2
3
VDD
OUT
GND
HAL 817 DATA SHEET
6Sept. 22, 2011; DSHDSH000156_002EN Micronas
2. Functional Description
2.1. General Functio n
The HAL817 is a monolithic integrated circuit which
provides an output voltage proportional to the mag-
netic flux through the Hall plate and proportional to the
supply voltage (ratiometric behavior).
The external magnetic field component perpendicular
to the branded side of the package generates a Hall
voltage. The Hall IC is sensitive to magnetic nor th and
south polarity. This voltage is converted to a digital
value, processed in the Digital Signal Processing Unit
(DSP) according to the settings of the EEPROM regis-
ters, converted to an analog voltage with ratiometric
behavior, and stabilized by a push-pull output transis-
tor stage . The fun ction and t he par ameters for the DSP
are explained in Section 2.2. on page 8.
The setting of the LO CK register disab le s the prog r am-
ming of the EEPROM memory for all time. This regis-
ter cannot be reset .
As long as the LOCK register is not set, the output
characteristic can be adjusted by programming the
EEPROM registers. The IC is addressed by modulat-
ing the supply voltage (see Fig. 2–1). In the supply
vo ltage r a nge from 4. 5 V u p to 5.5 V, the se nsor ge ner-
ates an analog output voltage. After detecting a com-
mand, the sensor reads or writes the memory and
answers with a digital signal on the output pin. The
analog output is switched off during the communication.
Several sensors in parallel to the same supply and
ground line can be programmed individually. The
selection of each sensor is done via its output pin.
The open-circuit detection provides a defined output
voltage if the VDD or GND line is broken. Inter nal tem-
peratu re compensation circuitry and the choppered off-
set compensation enables operation over the full tem-
perature range with minimal changes in accuracy and
high offset stability. The circuitry also rejects offset
shifts due to mechanical stress from the package. The
non-volatile memory consists of redundant EEPROM
cells. In addition, the sensor IC is equipped with
devices for overvoltage and reverse-voltage protection
at all pins.
Fig. 2–1: Programming with VDD modulation
Fig. 2–2: HAL817 block diagram
VOUT (V)
5
6
7
8
VDD (V)
HAL
817
VDD GND OUT analog
VDD
digital
Internally Temperature Oscillator
Switched 100
Digital D/A Analog OUT
VDD
GND
EEPROM Memory
Lock Control
stabilized
Supply and
Protection
Devices
Dependent
Bias
Protection
Devices
Hall Plate Signal
Processing Converter Output
A/D
Converter
10 k
Open-circuit,
Overvoltage,
Undervoltage
Detection
DATA SHEET HAL 817
Micronas Sept. 22, 2011; DSHDSH000156_002EN 7
Fig. 2–3: Details of EEPROM and Digital Signal Processing
MODE Register
FILTER
TC
6 bit
TCSQ
5 bit
SENSI-
14 bit
VOQ
11 bit
CLAMP-
10 bit 11 bit
LOCKR
1 bit
3 bit
RANGE
3 bit
EEPROM Memory
A/D
Converter Digital
Filter Multiplier Adder Limiter D/A
Converter
Digital Signal Processing
ADC-READOUT Register
14 bit Digital
Lock
Control
TIVITY LOW CLAMP-
HIGH
Output
Micronas
Registers
−40 −20 0 20 40
0
1
2
3
4
5
mT
VOUT
Range = 30 mT
Filter = 500 Hz
V
B
Clamp-high = 4 V
VOQ = 2.5 V
Sensitivity = 0.116
Clamp-low = 1 V
Fig. 2–4: Example for output characteristics
−150 −100 −50 0 50 100 150
0
1
2
3
4
5
mT
VOUT
Range = 100 mT
Filter = 2 kHz
V
B
Clamp-high = 4.5 V
VOQ = −0.5 V
Sensitivity = −1.36
Clamp-low = 0.5 V
Fig. 2–5: Example for output characteristics
HAL 817 DATA SHEET
8Sept. 22, 2011; DSHDSH000156_002EN Micronas
2.2. Digital Signal Processing and EEPROM
The DSP is the main par t of this sensor and perfor ms
the signal conditioning. The parameters for the DSP
are stored in the EEPROM registers. The details are
shown in Fig. 2–3.
Terminology:
SENSITIVITY: name of the register or register value
Sensitivity: name of the parameter
The EEPROM registers consist of three groups:
Group 1 contains the registers for the adaption of the
sensor to the magnetic system: MODE for selecting
the magnetic field range and filter frequency, TC and
TCSQ for the temperature characteristics of the mag-
netic sensitivity.
Group 2 contains the registers for defining the output
characteristics: SENSITIVITY, VOQ, CLAMP-LOW,
and CLAMP-HIGH. The output characteristic of the
sensor is defined by these 4 parameters (see Fig. 2–4
and Fig. 2–5 for examples).
–The parameter V
OQ (Output Quiescent Voltage)
corresponds to the output voltage at B = 0 mT.
– The paramete r Sensitivit y defines t he magnet ic sen-
sitivity:
– The output voltage can be calculated as:
The output voltage range can be clamped by setting
the regis ters CLAMP-L OW and CLAMP-H IGH in order
to enable failure detection (such as short-circuits to
VDD or GND and open connections).
Group 3 contains the Micronas registers and LOCK for
the locking of all registers. The Micronas registers are
programmed and locked during production and are
read-only for the customer. These registers are used
for oscillator frequency trimming, A/D converter offset
compensation, and several other special settings.
An exter nal magnetic field generates a Hall voltage on
the Hall plate. The ADC converts the amplified positive
or negative Hall voltage (operates with magnetic north
and south poles at the branded side of the package) to
a digital value. Positive values correspond to a mag-
netic north pole on the branded side of the package.
The digital signal is filtered in the internal low-pass fil-
ter and is readable in the ADC-READOUT register.
Depending on the programmable magnetic range of
the Hall IC, the operating range of the A/D converter is
from 30 mT...+30 mT up to 150 mT...+150 mT.
During further processing, the digital signal is multi-
plied with the sensitivity factor, added to the quiescent
output voltage and limited according to the clamping
voltage. The result is converted to an analog signal
and stabilized by a push-pull output transistor stage.
The ADC-READOUT at any given magnetic field
depends on the programmed magnetic field range but
also on the filter frequency. Fig. 2–6 shows the typical
ADC-READOUT values for the different magne tic field
ranges with the filter frequency set to 2 kHz. The rela-
tionship between the minimum and maximum ADC-
READOUT values and the filter frequency setting is
listed in the f ollowing table.
VOUT
B
Sensitivity =
VOUT Sensitivity B + VOQ
Filter Frequency ADC-READOUT range
80 Hz 3968...3967
160 Hz 1985...1985
500 Hz 5292...5290
1 kHz 2646...2645
2 kHz 1512...1511
−200 −100 0 100 200
−2000
−1500
−1000
−500
0
500
1000
1500
2000
ADC-
READOUT
Range 150 mT
Range 90 mT
Range 60 mT
Range 30 mT
B
mT
Filter = 2 kHz
Fig. 2–6: Typical ADC-READOUT
versus magnetic field for filter = 2 kHz
DATA SHEET HAL 817
Micronas Sept. 22, 2011; DSHDSH000156_002EN 9
Note: During application design, it should be taken
into consideration that the maximum and mini-
mum ADC-READOUT is not exceeded during
calibration and operation of the Ha ll IC. Conse-
quently, the maximum and minimum magnetic
fields that may occur in the operational range
of a specific applicat ion shou ld not satu rate the
A/D converter. Please note that the A/D con-
verter saturates at magnetic fields well above,
respectively below, the magnetic range limits.
This large safety band between specified mag-
netic range and true operational range helps to
avoid any saturation.
Range
The RANGE bits are the th ree lo w est bits of the MODE
register; they define the magnetic field range of the A/
D converter.
Filter
The FILTER bits are the three highest bits of the
MODE register; they define the 3 dB frequency of the
digital low pass filter.
TC and TCSQ
The temper ature dep endence of the ma gnetic sen sitiv-
ity can be adapted to different magnetic materials in
order to compensate for the change of the magnetic
strength with temperature. The adaption is done by
programming the TC (Temperature Coefficient) and
the TCSQ registers (Quadratic Temperature Coeffi-
cient). Thereby, the slope and the curvature of the
temperature dependence of the magnetic sensitivity
can be matched to the magnet and the sensor assem-
bly. As a result, the output voltage characteristic can
be fixed over the full temperature range. The sensor
can compensate for linear temperature coefficients
ranging f ro m about 3100 ppm/K up to 400 ppm/K and
quadratic coefficients from about 5 ppm/K² to 5 ppm/
K². Please refer to Section 4.3. on page 23 for the rec-
ommended settings for different linear temperature
coefficients.
Sensitivity
The SENSITIVITY register contains the parameter for
the multiplier in the DSP. The Sensitivity is program-
mable between 4 and 4. For VDD = 5 V, the register
can be changed in steps of 0.00049. Sensitivity = 1
corresponds to an increase of the output voltage by
VDD if the ADC-READOUT increases by 2048.
For all calculations, the digital value from the magnetic
field of the A/D converter is used. This digital infor ma-
tion is readable from the ADC-READOUT register.
VOQ
The V OQ r egi ster contai ns the p ara meter for the adder
in the DSP. VOQ is the output voltage without external
magnetic field (B = 0 mT, respectively ADC-READ-
OUT = 0) and prog r amma b le fro m VDD up to VDD. For
VDD = 5 V, the register can be changed in steps of
4.9 mV.
Note: If VOQ is programmed to a negative voltage, the
maximum output v oltage is limited to:
For calibration in the system environment, a 2-point
adjustment procedure (see Section 2.3.) is recom-
mended. The suitable Sensitivity and VOQ values for
each sensor ca n be calculat ed individually by this pro-
cedure.
Magnetic Field Range RANGE
30 mT...30 mT 0
40 mT...40 mT 4
60 mT...60 mT 5
75 mT...75 mT 1
80 mT...80 mT 6
90 mT...90 mT 2
100 mT...100 mT 7
150 mT...150 mT 3
3 dB Frequency FILTER
80 Hz 0
160 Hz 1
500 Hz 2
1 kHz 3
2 kHz 4
VOUT * 2048
ADC-READOUT * VDD
Sensitivity =
VOUTmax = VOQ + VDD
HAL 817 DATA SHEET
10 Sept. 22, 2011; DSHDSH000156_002EN Micronas
Clamping Voltage
The output voltage range can be clamped in order to
detect failures like shorts to VDD or GND or an open
circuit.
The CLAMP-LOW register contains the parameter for
the lower limit. The lower clamping voltage is program-
mable between 0 V and VDD/2. Fo r VDD = 5 V, the reg-
ister can be change d in steps of 2.44 mV.
The CLAMP-HIGH register contains the parameter for
the upper limit. The upper clamping voltage is pro-
grammable between 0 V and VDD. For VDD = 5 V, in
steps of 2.44 mV.
LOCKR
By setting this 1-bit register, all registers will be locke d,
and the sensor will no longer respond to any supply
voltage modulation. This bit is active after the first
power-off and power-on sequence after setting the
LOCK bit.
Warning: This register cannot be reset!
ADC-READOUT
This 14-bit register delivers the actual digital value of
the applied magnetic field before the signal process-
ing. This register can be read out and is the basis for
the calibration procedure of the sensor in the system
environment.
2.3. Calibration Procedure
2.3.1. General Procedure
For calibration in the system environment, the applica-
tion kit from Micronas is recommended. It contains the
hardware for the generation of the serial telegram for
programming and the corresponding software for the
input of the register values.
In this section, programming of the sensor using this
programming tool is explained. Please refer to
Section 5. on page 25 for information about program-
ming without this tool.
For the individual calibration of e ach sensor in the cus-
tomer application, a two point adjustment is recom-
mended (see Fig. 2–7 for an example). When using
the application kit, the calibration can be done in three
steps:
Step 1: Input of the registers which need not be
adjusted individually
The magnetic circuit, the magnetic material with its
temperature characteristics, the filter frequency, and
low and high clamping voltage are given for this appli-
cation.
Therefore, the values of the following registers should
be identical for all sensors of the customer application.
–FILTER
(according to the m aximum sign al fre q ue n cy)
–RANGE
(according to the maximum magnetic field at the
sensor position)
– TC and TCSQ
(depends on the material of the magnet an d the
other temperature dependencies of the application)
– CLAMP-LOW and CLAMP-HIGH
(according to the application requirements)
Write the appropriate settings into the HAL 817 regis-
ters.
DATA SHEET HAL 817
Micronas Sept. 22, 2011; DSHDSH000156_002EN 11
Step 2: Calculation of VOQ and Sensitivity
The calibration points 1 and 2 can be set inside the
specified range. The corresponding values for VOUT1
and VOUT2 result from the application requirements.
For highest accuracy of the sensor, calibration points
near the minimum and maximum input signal are rec-
ommended. The difference of the output voltage
between calibration point 1 and calibration point 2
should be more than 3.5 V.
Set the system to calibration point 1 and read the reg-
ister ADC-READOUT. The result is the value ADC-
READOUT1.
Now, set the system to calibration point 2, read the
register ADC-READOUT again, and get the value
ADC-READOUT2.
With these values and the target values VOUT1 and
VOUT2, for the calibration points 1 and 2, respectively,
the values for Sensitivity and VOQ are calculated as:
This calculation has to be done individually for each
sensor.
Next, write the calculated values for Sensitivity and
VOQ into the IC for adjusting the sensor.
The sensor is now calibrated fo r the customer applica-
tion. However, the programming can be changed
again and again if necessary.
Step 3: Locking the Sensor
The last step is activating the LOCK function with the
“LOC K” command . Please no te that the LOCK function
becomes effective after power-down and power-up of
the Hall IC. The sensor is now locked and does not
respond to any programming or reading commands.
Warning: This register cannot be reset!
2.3.2. Calibration of the Angle Sensor
The following description explains the calibration pro-
cedure using an angle sensor as an example. The
required output characteristic is sho wn in Fi g. 2–7.
– the angle range is from 25° to 25°
– temperature coefficient of the magnet: 500 ppm/K
Low clamping voltage VOUT1,2 High cl amping voltag e
VOUT1VOUT2
ADC-READOUT1ADC-READOUT2
Sensitivity = VDD
2048
*
ADC-READOUT1 * Sensitivity * VDD
2048
VOQ = VOUT1
−30 −20 −100 102030
0
1
2
3
4
5
°
VOUT
V
Angle
Clamp-high = 4.5 V
Calibration point 2
Calibration point 1
Clamp-low = 0.5 V
Fig. 2–7: Example for output characteristics
HAL 817 DATA SHEET
12 Sept. 22, 2011; DSHDSH000156_002EN Micronas
Step 1: Input of the registers which need not be
adjusted individually
The register values for the follo wing registers are given
for all applications:
–FILTER
Select the filter frequency: 500 Hz
–RANGE
Select the magnetic field range: 30 mT
–TC
F or this magnetic material: 6
–TCSQ
F or this magnetic material: 14
– CLAMP-LOW
For our exam p le: 0.5 V
– CLAMP-HIGH
For our exam p le: 4.5 V
Enter these values in the software, and use the “write
and store” command for permanently writing the val-
ues in the registers.
Step 2: Calculation of VOQ and Sensitivity
There are two ways to calculate the values for VOQ
and Sensitivity.
Manual Calculat ion:
Set the system to calibration point 1 (angle 1 = 25°)
and read the register ADC-READOUT. For our exam-
ple, the result is ADC-READOUT1 = 2500.
Next, set the system to calibration point 2 (angle 2 =
25°), and read the register ADC-READOUT again. For
our example, the result is ADC-READOUT2 = 2350.
With these measurements and the targets VOUT1 =
4.5 V and VOUT2 = 0.5 V, the values for Sensitivity and
VOQ are calculated as
Software Calibration:
Use the menu CALIBRATE from the PC software and
enter the values 4.5 V for VOUT1 and 0.5 V for VOUT2.
Set the system to calibration point 1 (angle 1 = 25°),
hit the button “Read ADC-Readout1”, set the system to
calibration point 2 (angle 2 = 25°), hit the button “Read
ADC-Readout2”, and hit the button “Calculate”. The
software will then calculate the appropriate VOQ and
Sensitivity.
This calculation has to be done individually for each
sensor. Now, write the calculated valu es with th e “write
and store” command int o the HAL817 f or prog r amming
the sensor.
Step 3: Locking the Sensor
The last step is activating the LOCK function with the
“LOC K” command. Please not e that the LOCK fu nction
becomes effective after power-down and power-up of
the Hall IC. The sensor is now locked and does not
respond to any progr amming or reading commands.
Warning: This register cannot be reset!
4.5 V 0.5 V
25002350
Sensitivity = 5V
2048
*=0.3378
VOQ = 4.5 V 2048
2500 * 0.3378) * 5 V= 2.438 V
DATA SHEET HAL 817
Micronas Sept. 22, 2011; DSHDSH000156_002EN 13
3. Specifications
3.1. Outline Dimensions
Fig. 3–1:
TO92UT-2 Plastic Transistor Standard UT package, 3 leads
Weight approximately 0.12 g
HAL 817 DATA SHEET
14 Sept. 22, 2011; DSHDSH000156_002EN Micronas
Fig. 3–2:
TO92UT-1 Plastic Transistor Standard UT package, 3 leads, spread
Weight approximately 0.12 g
DATA SHEET HAL 817
Micronas Sept. 22, 2011; DSHDSH000156_002EN 15
Fig. 3–3:
TO92UT-2: Dimensions ammopack inline, not spread
HAL 817 DATA SHEET
16 Sept. 22, 2011; DSHDSH000156_002EN Micronas
Fig. 3–4:
TO92UT-1: Dimensions ammopack inline, spread
DATA SHEET HAL 817
Micronas Sept. 22, 2011; DSHDSH000156_002EN 17
3.2. Dimensions of Sensitive Area
0.25 mm x 0.25 mm
3.3. Package Parameters and Position of Sensitive
Areas
3.4. Absolute Maxi mum Ratings
Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute
maximum rating conditions for extended periods will aff ect device reliability.
This device contains circuitry to protect the inputs a nd ou t puts ag ainst dam age due to hig h sta tic voltages or electric
fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than abso-
lute maximum-rated voltages to this circuit.
All voltages listed are referenced to ground (GND).
TO92UT-1/-2
A4 0.3 mm nominal
Bd 0.3 mm
D1 4.05 0.05 mm
H1 min. 22.0 mm, max. 24.1 mm
y 1.5 mm nominal
Symbol Parameter Pin No. Min. Max. Unit Condition
VDD Supply Voltage 1 8.5 8.5 V not additive
VDD Supply Voltage 1 16 16 V 1) not additive
t < 1 h
IDD Reverse Supply Current 1 501) mA
VOUT Output Voltage 3 53)
53) 8.52)
162) V not additive
t < 1 h, not additive
VOUT VDD Excess of Output Voltage
over Supply Voltage 3,1 2 V
IOUT Continuous Output Current 3 10 10 mA
tSh Output Short Circuit Duration 3 10 min
1) as long as TJmax is not exceeded
2) as long as TJmax is not exceeded, output is not protected to external 14 V-line (or to 14 V)
3) internal protection resistor = 100
HAL 817 DATA SHEET
18 Sept. 22, 2011; DSHDSH000156_002EN Micronas
3.4.1. Storage and Shelf Life
The permissible storag e time (shelf lif e) of the sensors is unlimited, pr ovided the sensors are stored at a maxim um of
30 °C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required.
Solderability is guaranteed for one year from the date code on the package .
3.5. Recommended Operating Conditions
Functional operation of the device beyond those indicated in the “Recommended Operating Conditions/Characteris-
tics” is not implied and may result in unpredictable behavior of the device and may reduce reliability and lifetime.
All voltages listed are referenced to ground (GND).
Symbol Parameter Pin No. Min. Typ. Max. Unit Remarks
VDD Supply Voltage 1 4.5 5 5.5 V
IOUT Continuous Output Current 3 1.2 1.2 mA
RLLoad Resistor 3 4.5 k
CLLoad Capacitance 3 0.33 10 1000 nF
NPRG Number of EEPROM Pro-
gramming Cycles 100 0°C < T
amb < 55 °C
TJJunction Operating
Temperature1)
125
150
170
°C for 8000 h (not additive)
for 2000 h (not additive)
< 1000 h (not add itive)
1) Depends on the temperature profile of the application . Please contact Micronas for life time calculations.
DATA SHEET HAL 817
Micronas Sept. 22, 2011; DSHDSH000156_002EN 19
3.6. Characteristics
at TJ = 40 °C to +170 °C, VDD = 4.5 V to 5.5 V, GND = 0 V after programming and locking,
at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.
Typical Characteristics for TJ = 25 °C and VDD = 5 V.
For all other temperature ranges this table is also valid, but only in the junction temperature range defined by the
temperature range (Example: For K-Type this table is limited to TJ= 40 °C to +140 °C).
Symbol Parameter Pin No. Min. Typ. Max. Unit Conditions
IDD Supply Current
over Temperature Range 1710mA
Resolution 3 12 bit ratiometric to VDD 1)
INL Non-Linearity of Output Voltage
over Temperature 30.5 0 0.5 % % of supply voltage2)
ERRatiometric Error of Output
over Temperature
(Error in VOUT / VDD)
30.5 0 0.5 % VOUT1 - VOUT2> 2V
during calibration procedure
Ratiometricy of Output
over Temperature 3 99.5 100 100.5 % VOUT1 - VOUT2> 2V
during calibration procedure
TKVariation of Linear Temperature
Coefficient 3400 0 400 ppm/k if TC and TCSQ suitable for the
application
VOUTCL Accuracy of Output Voltage at
Clamping Low Voltage over
Temperature Range
345 0 45 mV RL = 4.7 k, VDD = 5 V
VOUTCH Accuracy of Output Voltage at
Clamping High Voltage over
Temperature Range
345 0 45 mV RL = 4.7 k, VDD = 5 V
VOUTH Output High Voltage 3 4.65 4.8 V VDD = 5 V, 1 mA IOUT 1mA
VOUTL Output Low Voltage 3 0.2 0.35 V VDD = 5 V, 1 mA IOUT 1mA
fADC Internal ADC Frequency over
Temperature Range 110 128 150 kHz VDD = 4.5 V to 8.5 V
tr(O) Response Time of Output 3 5
4
2
1
10
8
4
2
ms
ms
ms
ms
3 dB Filter frequency = 80 Hz
3 dB Filter frequency = 160 Hz
3 dB Filter frequency = 500 Hz
3 dB Filter frequency = 2 kHz
CL = 10 nF, time from 10% to 90% of
final output voltage for a steplike
signal Bstep from 0 mT to Bmax
td(O) Delay Time of Output 3 0.1 0.5 ms CL = 10 nF
tPOD Power-Up Time (Time to reach
stabilized Output Voltage) 6
5
3
2
11
9
5
3
ms
ms
ms
ms
3 dB Filter frequency = 80 Hz
3 dB Filter frequency = 160 Hz
3 dB Filter frequency = 500 Hz
3 dB Filter frequency = 2 kHz
CL = 10 nF, 90% of VOUT
BW Small Signal Bandwidth (3dB) 3 2kHz BAC < 10 mT;
3 dB Filter frequency = 2 kHz
VOUTn Output RMS Noise 3 3 6 mV magnetic range = 90 mT
3 dB Filter frequency = 80 Hz
Sensitivity 0.26
ROUT Output Resistance over
Recommended Operating Range 3110VOUTLmax VOUT VOUTHmin
1) Output DAC full scale = 5 V ratiometric, Output DAC offset = 0 V, Output DAC LSB = VDD/4096
2) if more than 50% of the selected magnetic field range are used and the temperature compensation is suitable
VOUT VDD
VDD
----------------------------- VOUT VDD 5 V=
5 V
---------------------------------------------
=
HAL 817 DATA SHEET
20 Sept. 22, 2011; DSHDSH000156_002EN Micronas
3.7. Thermal Characteristics
at TJ = 40 °C to +170 °C
For all other temperature ranges this table is also valid, but only in the junction temperature range defined by the
temperature range (Example: For K-Type this table is limited to TJ= 40 °C to +140 °C).
3.8. Magnetic Characteristics
at TJ = 40 °C to +170 °C, VDD = 4.5 V to 5.5 V, GND = 0 V after programming and loc king,
at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.
Typical Characteristics for TJ = 25 °C and VDD = 5 V.
For all other temperature ranges this table is also valid, but only in the junction temperature range defined by the
temperature range (Example: For K-Type this table is limited to TJ= 40 °C to +140 °C).
3.9. Open-Circuit Detection
at TJ = 40 °C to +170 °C, Typical Characteristics for TJ = 25 °C, after locking the sensor
For all other temperature ranges this table is also valid, but only in the junction temperature range defined by the
temperature range (Example: For K-Type this table is limited to TJ= 40 °C to +140 °C).
3.10.Overvoltage and Undervoltage Detection
at TJ = 40 °C to +170 °C, Typical Characteristics for TJ = 25 °C
For all other temperature ranges this table is also valid, but only in the junction temperature range defined by the
temperature range (Example: For K-Type this table is limited to TJ= 40 °C to +140 °C).
Please note: The over- and undervoltage detection is activated only after locking the sensor!
Symbol Parameter Pin No. Min. Typ. Max. Unit Conditions
TO92UT Package
Rthja
Rthjc
Rthjs
Thermal resistance
Junction to Ambient
Junction to Case
Junction to Solder Point
235
61
128
K/W
K/W
K/W
measured on 1s0p board
measured on 1s0p board
measured on 1s1p board
Symbol Parameter Pin No. Min. Typ. Max. Unit Test Conditions
BOffset Magnetic Offset 3 0.5 0 0.5 mT B = 0 mT, IOUT = 0 mA, TJ = 25 °C,
unadjusted sensor
BOffset Magnetic Offset Drift over Tem-
perature Range
BOFFSET(T)-BOFFSET(25 °C)
1.45 0 1.45 mT B = 0 mT, IOUT = 0 mA
Symbol Parameter Pin No. Min. Typ. Max. Unit Test Conditions
VOUT Output voltage
at open VDD line 3000.2VV
DD = 5 V
RL = 10 k to GND
VOUT Output voltage at
open GND line 34.74.85VV
DD = 5 V
RL = 10 k to GND
Symbol Parameter Pin No. Min. Typ. Max. Unit Test Conditions
VDD,UV Undervoltage detection level 1 3.2 3.7 4.1 V 1)
VDD,OV Overvoltage detection level 1 8.5 8 .9 10.0 V 1)
1) If the supply voltage drops below VDD,UV or rises above VDD,OV, the output voltage is switched to VDD (94% of VDD at RL = 10 k to GND).
The CLAMP-LOW register has to be set to a voltage 200 mV
DATA SHEET HAL 817
Micronas Sept. 22, 2011; DSHDSH000156_002EN 21
3.11. Typical Characteristics
−15 −10 −5 0 5 101520
−20
−15
−10
-5
0
5
10
15
20
V
mA
IDD
VDD
TA = −40 °C
TA = 25 °C
TA = 150 °C
Fig. 3–5: Typical current consumption
versus supply voltage
−50 0 50 100 150 200
0
2
4
6
8
10
°C
VDD = 5 V
mA
IDD
TA
Fig. 3–6: Typical current consumption
versus ambient temperature
−1.5 −1.0 −0.5 0.0 0.5 1.0 1.5
0
2
4
6
8
10
TA = 25 °C
VDD = 5 V
mA
IDD
mA
IOUT
Fig. 3–7: Typical current consumption
versus output current
–40
–35
−30
–25
–20
–15
–10
–5
0
5
10 100 1000 10000Hz
dB
fsignal
VOUT –3
Filter: 80 Hz
Filter: 160 Hz
Filter: 500 Hz
Filter: 2 kHz
Fig. 3–8: Typical output voltage
versus signal frequency
HAL 817 DATA SHEET
22 Sept. 22, 2011; DSHDSH000156_002EN Micronas
45678
−1.0
−0.8
−0.6
−0.4
−0.2
0.0
0.2
0.4
0.6
0.8
1.0
VOUT/VDD = 0.82
VOUT/VDD = 0.66
VOUT/VDD = 0.5
VOUT/VDD = 0.34
VOUT/VDD = 0.18
%
ER
VDD
V
Fig. 3–9: Typical ratiometric error
versus supply voltage
−50 0 50 100 150 200
0
20
40
60
80
100
120
TC = 16, TCSQ = 8
TC = 0, TCSQ = 12
TC = −20, TCSQ = 12
TC = −31, TCSQ = 0
%
°C
TA
1/sensitivity
Fig. 3–10: Typical 1/sensitivity
versus ambient temperature
−50 0 50 100 150 200
−1.0
−0.8
−0.6
−0.4
−0.2
0.0
0.2
0.4
0.6
0.8
°C
1.0
TC = −20, TCSQ = 12
TC = 0, TCSQ = 12
TC = 16, TCSQ = 18
mT
TA
BOffset
Fig. 3–11: Typical magnetic offset
versus ambient temperature
−40 −20 0 20 40
−1.0
−0.8
−0.6
−0.4
−0.2
0.0
0.2
0.4
0.6
0.8
1.0
mT
Range = 30 mT
%
B
INL
Fig. 3–12: Typical nonlinearity
versus magnetic field
DATA SHEET HAL 817
Micronas Sept. 22, 2011; DSHDSH000156_002EN 23
4. Application Notes
4.1. Application Circuit
F or EMC protect ion, it is recommen ded to connect one
ceramic 100 nF capacitor each between ground and
the supply voltage, respectively the output voltage pin.
In addition, the input of the controller unit should be
pulled-down with a 4.7 k resistor and a ceramic
100 nF capacitor.
Please note that during programming, the sensor will
be supplied repeatedly with the programming voltage
of 12.5 V for 100 ms. All components connected to the
VDD line at this time must be able to resist this voltage.
Fig. 4–1: Recommended application circuit
4.2. Use of two HAL817 in Parallel
Two or more HAL817 sensors which are operated in
parallel on the same supply and ground line can be
programmed individually. In order to select the IC
which should be programmed, both Hall ICs are inacti-
vated by the “Deactivate” command on the common
supply line. Then, the appropriate IC is activated by an
“Activate” pulse on its output. Only the activated sen-
sor will react to all following read, write, and program
commands. If the second IC has to be programmed,
the “Deactivate” command is sent again, and the sec-
ond IC can be selected.
Fig. 4–2: Parallel operation of two HAL817
4.3. Temperature Compensation
The relationship between the temperature coefficient
of the magnet and the corresponding TC and TCSQ
codes fo r linear compensation is given in the following
table. In addition to the linear change of the magnetic
field with temperature, the curvature can be adjusted
as well. For this purpose, other TC and TCSQ combi-
nations are required which are not shown in the table.
Please contact Micronas for more detailed infor mation
on this higher order temperature compensation.
The HAL 817 contains similar temperature compensa-
tion circuits like for HAL815. If an optimal setting for
the HAL815 is already a vailable , then it is necessary to
verify this setting for the HAL817.
OUT
VDD
GND
100 nF HAL817
4.7 k
C
100 nF 100 nF
HAL 817
GND
100 nF HAL 817
100 nF 100 nF
Sensor A Sensor B
VDD
OUT B & Select B
OUT A & Select A
Temperature
Coefficient of
Magnet (ppm/K)
TC TCSQ
360 31 0
260 27 0
150 23 1
60 20 1
0182
60 16 1
160 13 2
270 10 3
370 7 4
450 5 4
490 4 5
570 2 5
650 0 6
780 37
860 58
960 79
1050 99
1150 11 10
1260 13 11
1310 14 12
1420 16 13
1540 18 14
HAL 817 DATA SHEET
24 Sept. 22, 2011; DSHDSH000156_002EN Micronas
4.4. Ambient Temperature
Due to the inter nal power dissipation, the temperature
on the silicon chip (junction temperature TJ) is higher
than the temperature outside the package (ambient
temperature TA).
TJ = TA + T
At static conditions and continuous operation, the fol-
lowing equation applies:
T = IDD * VDD * RthjX
The X represents junction to Ambient, Case or Solder
Point.
For worst case calculation, use the max. parameters
for IDD and RthjX, and the max. value for VDD from the
application.
The following example shows the result for junction to
ambient conditions. For VDD = 5.5 V, Rthja = 250 K/W
and IDD = 10 mA the temperature difference T is
13.75 K.
The junction temperature TJ is specified. The maxi-
mum ambient temperature TAmax can be calculated as:
TAmax = TJmax T
4.5. EMC and ESD
The HAL817 is designed for a stabilized 5 V supply.
Interferences and disturbances conducted along the
12 V onboard system (product standard ISO 7637 part
1) are not relevant for these applications.
For applications with disturbances by capacitive or
inductive coupling on the supply line or radiated distur-
bances , the applicat ion circuit sho wn in Fig . 4–1 is rec-
ommended. Applications with this arrangement
passed the EMC tests according to the product stan-
dards ISO 7637 part 3 (Electrical transient transmis-
sion by capacitive or inductive coupling).
Please contact Micronas for the detailed investigation
reports with the EMC and ESD results.
1600 19 14
1660 20 15
1730 21 15
1800 22 16
1860 23 17
1930 24 17
2000 25 18
2080 26 19
2150 27 19
2230 28 20
2310 29 21
2470 31 23
Te mperature
Coefficient of
Magnet (ppm/K)
TC TCSQ
DATA SHEET HAL 817
Micronas Sept. 22, 2011; DSHDSH000156_002EN 25
5. Programming of the Sensor
5.1. Definition of Programming Pulses
The sensor is addressed by modulating a serial tele-
gram on the supply voltage. The sensor answers with
a serial telegram on the output pin.
The bits in the serial telegram have a different bit time
for the VDD-line and the output. The bit time for the
VDD-line is defined through the length of the Sync Bit
at the be ginning of each telegram. The bit time for the
output is defined through the Acknowledge Bit.
A logical “0” is coded as no voltage change within the
bit time. A logical “1” is coded as a voltage change
between 50% and 80% of the bit time. After each bit, a
voltage change occurs.
5.2. Definition o f the Telegram
Each telegram starts with the Sync Bit (logical 0), 3
bits for the Command (COM), the Command Parity Bit
(CP), 4 bits for the Address (ADR), and the Address
Parity Bit (AP).
There are 4 kinds of telegrams:
– Write a register (see Fig. 5–2)
After the AP Bit, follow 14 Data Bits (DAT) and the
Data Parity Bit (DP). If the telegram is valid and the
command has been processed, the sensor answers
with an Acknowledge Bit (logical 0) on the output.
– Read a register (see Fig. 5–3)
After evaluating this command, the sensor answers
with the Acknowledge Bit, 14 Data Bits, and the
Data Parity Bit on the output.
– Programming the EEPROM cells (see Fig. 5–4)
After evaluating this command, the sensor answers
with the Acknowledge Bit. After the delay time tw,
the supply voltage rise s up t o the programming volt-
age.
– Activate a sensor (see Fig. 5–5)
If more than one sensor is connected to the supply
line, selection can be done by first deactivating all
sensors. The output of all sensors will be pulled to
ground by the internal 10 k resistors. With an Acti-
vate pulse on the appropriate output pin, an individ-
ual sensor can be selected. All following commands
will only be accepted from the activated sensor.
Fig. 5–1: Definition of logical 0 and 1 bit
trtf
tp0 tp0
logical 0
VDDH
VDDL
or
tp0
logical 1
VDDH
VDDL
or tp0
tp1
tp1
Table 5–1: Telegram paramet ers
Symbol Parameter Pin Min. Typ. Max. Unit Remarks
VDDL Supply Voltage for Low Level
during Programming 155.66V
VDDH Supply Voltage for High Level
during Programming 1 6.8 8.0 8.5 V
trRise time 1 0.05 ms
tfFall time 1 0.05 ms
tp0 Bit time on VDD 1 1.7 1.9 2.0 ms tp0 is defined through the Sync Bit
tpOUT Bit time on output pin 3234mst
pOUT is defined through the
Acknowledge Bit
tp1 Voltage Change for logical 1 1, 3 50 65 80 % % of tp0 or tpOUT
VDDPROG Supply Voltage for
Programming the EEPROM 1 12.4 12.5 12.6 V
tPROG Programming Time for EEPROM 1 95 100 105 ms
trp Rise time of programming voltage 1 0.2 0.5 1 ms
HAL 817 DATA SHEET
26 Sept. 22, 2011; DSHDSH000156_002EN Micronas
Fig. 5–2: Telegram for coding a Write command
Fig. 5–3: Te le gram for coding a Read command
Fig. 5–4: Telegram for coding the EEPROM programming
Fig. 5–5: Activate pulse
tfp Fall time of programming voltage 1 0 1 ms
twDelay time of programming voltage
after Acknowledge 10.50.71ms
Vact Voltage for an Activate pulse 3345V
tact Duration of an Activate pulse 3 0.05 0.1 0.2 ms
Table 5–1: Telegram parameters, continued
Symbol Parameter Pin Min. Typ. Max. Unit Remarks
Sync COM CP ADR AP DAT DP
Acknowledge
VDD
VOUT
WRITE
Sync COM CP ADR AP
DAT DPAcknowledge
VDD
VOUT
READ
Sync COM CP ADR AP
tPROG
Acknowledge
VDD
VOUT
ERASE, PROM, and LOCK
trp tfp
tw
VDDPROG
tACT
VOUT
trtf
VACT
DATA SHEET HAL 817
Micronas Sept. 22, 2011; DSHDSH000156_002EN 27
5.3. Telegram Codes
Sync Bit
Each telegram starts with the Sync Bit. This logical “0”
pulse defines the exact timing for tp0.
Command Bits (COM)
The Command code contains 3 bits and is a binary
number. Table 5–2 shows th e a v aila b le commands and
the corresponding codes for the HAL817.
Command Parity Bit (CP)
This parity bit is “1” if the number of zeros within the 3
Command Bits is uneven. The parity bit is “0”, if the
number of zeros is even.
Address Bits (ADR)
The Address code contains 4 bits and is a binary num-
ber. Table 5–3 shows the available addresses for the
HAL817 registers.
Address Parity Bit (AP)
This parity bit is “1” if the number of zeros within the 4
Address bit s is uneven . The par ity bit is “0” if th e num-
ber of zeros is even.
Data Bits (DAT)
The 14 Data Bits contain the register information.
The registers use different number formats for the
Data Bits. These formats are exp lained in Section 5.4.
In the Write command, the last bits are valid. If, for
example, the TC register (6 bits) is written, only the
last 6 bits are valid.
In the Read command, the first bits are valid. If, for
e xample , the TC register (6 bits) is read, only the fir st 6
bits are valid.
Data Parity Bit (DP)
This parity bit is “1” if the number of zeros within the
binar y number is even . The parity bit is “0” if the num-
ber of zeros is uneven.
Acknowledge
After each telegram, the output answers with the
Acknowledge signal. This logical “0” pulse defines the
exact timing for tpOUT.
Table 5–2: Available commands
Command Code Explanation
READ 2 read a register
WRITE 3 write a register
PROM 4 program all nonvolatile registers (except the lock bits)
ERASE 5 erase all nonvolatile registers (except the lock bits)
LOCK 7 loc k the whole device and switch permanently to the analog-mode
HAL 817 DATA SHEET
28 Sept. 22, 2011; DSHDSH000156_002EN Micronas
5.4. Number Formats
Binary number:
The most significant bit is given as first, the least sig-
nificant bit as last digit.
Example: 101001 represents 41 decimal.
Signed binary number:
The first digit represents the sign of the following
binary number (1 for negative, 0 for positive sign).
Example: 0101001 represents +4 1 decimal
1101001 represents 41 decimal
Two’s-complementary number:
The first digit of positive numbers is “0”, the rest of the
number is a binary number. Negative numbers start
with “1”. In order to calculate the absolute value of the
number, calculate the complement of the remaining
digits and add “1”.
Example: 0101001 represents +41 decimal
1010111 repres en ts 41 decimal
Micronas registers (read only for customers)
Table 5–3: Available register addresses
Register Code Data
Bits Format Customer Remark
CLAMP-LOW 1 10 binary read/write/program Low clamping voltage
CLAMP-HIGH 2 11 binary read/write/program High clamping voltage
VOQ 3 11 two compl.
binary read/write/program
SENSITIVITY 4 14 signed binary read/write/program
MODE 5 6 binary read/write/program Range and filter settings
LOCKR 6 1 binary lock Lock Bit
ADC-READOUT 7 14 two compl.
binary read
TC 11 6 signed binary read/write/program
TCSQ 12 5 binary read/write/program
DEA CTIVATE 15 12 binary write Deactivate the sensor
Register Code Data
Bits Format Remark
OFFSET 8 5 two compl. binary ADC offset adjustment
FOSCAD 9 5 binary Oscillator frequency adjustment
SPECIAL 13 8 special settings
DATA SHEET HAL 817
Micronas Sept. 22, 2011; DSHDSH000156_002EN 29
5.5. Register Information
CLAMP-LOW
– The register range is from 0 up to 1023.
– The register value is calculated by:
CLAMP-HIGH
– The register range is from 0 up to 2047.
– The register value is calculated by:
VOQ
– The register range is from 1024 up to 1023.
– The register value is calculated by:
SENSITIVITY
– The register range is from 8192 up to 8191.
– The register value is calculated by:
TC and TCSQ
– The TC register range is from 31 up to 31.
– The TCSQ register range is from 0 up to 31.
Please refer Section 4.2. on page 23 for the recom-
mended values.
MODE
– The register range is from 0 up to 63 and contains
the settings for FILTER and RANGE:
Please refer Section 2.2. on page 8 for the available
FILTER and RANGE values.
ADC-READOUT
– This register is read only.
– The register range is from 8192 up to 8191.
DEACTIVATE
– This register can only be written.
– The register has to be written with 2063 decimal
(80F hexadecimal) for the deactivation.
– The sensor can be reset with an Activate pulse on
the output pin or by switching off and on the supp ly
voltage.
5.6. Programmin g Information
If the conte n t o f a ny regis ter ( except the lock regis ter s)
is to be changed, the desired value must first be writ-
ten into the corresponding RAM register. Before read-
ing out the RAM register again, the register value must
be permanently stored in the EEPROM.
Permanently storing a value in the EEPROM is done
by first sending an ERASE command followed by
sending a PROM command. The address within the
ERASE and PROM commands is not important.
ERASE and PROM act on all registers in parallel.
If all HAL817 registers are to be changed, all writing
commands can be sent one aft er the ot her, follo w ed by
sending one ERASE and PROM command at the end.
During all communication sequences, the customer
has to check if the communication with the sensor was
successful. This means that the acknowledge and the
parity bits sent by the sensor have to be checked by
the customer. If the Micronas programmer board is
used, the customer has to check the error flags sent
from the programmer board.
Note: For production and qualification tests, it is man-
datory to set the LOCK bit after final adjustment
and programming of HAL 817. The LOCK func-
tion is active after the next power-up of the sen-
sor. Micronas also recommends sending an
additional ERASE command after sending the
LOCK command.
The success of the Lock Process should be
checked by reading at least one sensor register
after locking and/or by an analog check of the
sensors output signal.
Electrostatic Discharges (ESD) may disturb the
programming pulses. Please take precautions
against ESD.
Low Clamping Voltage
VDD * 2048CLAMP-LOW =
High Clamping Voltage
VDD * 2048CLAMP-HIGH =
VOQ
VDD * 1024VOQ =
Sensitivity * 2048SENSITIVITY =
MODE = FILTER * 8 + RANGE
HAL 817 DATA SHEET
30 Sept. 22, 2011; DSHDSH000156_002EN Micronas
Micronas GmbH
Hans-Bunte-Strasse 19 D-79108 Fre iburg P.O. Box 840 D-79008 Freiburg, Germany
Tel. +49-761-517-0 Fax +49-761-517-2174 E-mail: docservice@micronas.com Internet: www.micronas.com
6. Data Sheet History
1. Data Sheet: “HAL815 Programmable Linear Hall-
Effect Sensor”, Aug. 16, 2002, 6251-537-1DS. First
release of the da ta sheet.
2. Data Sheet: “HAL815 Programmable Linear
Hall-Effect Sensor”, June 24, 2004, 6251-537-2DS.
Second release of the data sheet. Major changes:
– new pa ckage diagr am for TO92UT-1
– package diagram for TO92UT-2 added
– ammopack diagrams for TO92UT-1/-2 added
3. Data Sheet: “HAL815 Programmable Linear Hall-
Effect Sensor”, Feb. 7, 2006, 6251-537-3DS.
Third release of the data sheet. Major changes:
– characteristics updated
4. Data Sheet: “HAL 817 Programmable Linear
Hall-Effect Sensor”, Aug. 10, 2010,
DSH000156_001EN. First release of the data sheet.
Major changes:
– Section 1.6. “Solderability and Welding” updated
– package diagr ams updated
5. Data Sheet: “HAL 817 Programmable Linear
Hall-Effect Sensor”, Sept. 22, 2011,
DSH000156_002EN. Second release of the data
sheet. Major changes:
– temperature range K added
