Lm mem ee nnn SAMSUNG SEMICONDUCTOR INC 14e 0 PP 2se4a42 covers 2 I BCW7i NPN EPITAXIAL SILICON TRANSISTOR T2918 SOT-23 GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS (T,=25C) i Characteristic Symbol Rating Unit i Collector-Base Voltage Vceo 50 v . ! Collector-Emitter Voltage Veeo 45 v | Emitter-Base. Voltage Vewo 5 Vv . j Collector Current Ic 100 mA ; Collector Dissipation Pe 350 mW : Storage Temperature Tstg 150 C Refer to MMBT5088 for graphs 1, Base 2, Emitter 3.. Collector ELECTRICAL CHARACTERISTICS (Ta =25C) ' Characteristic Symbol Test Condition Min Typ Max Unit Collector-Base Breakdown Voltage BV ceo Ic=10pA, le=0 50 Vv : Collector-Emitter Breakdown Voltage ; BYVcro lc=2mA, le=O 45 Vv : Collector-Emitter Breakdown Voltage i BVces Ip=2mA, Veg=O 45 Vv : Emitter-Base Breakdown Voltage BVeso ie=10pA, Ie=0 5 Vv : Collector Cutoff Current lcxo Voa=20V,. =O 100 nA : OC Current Gain free Vce=5V, Io=2mA 4 110 220 Collector-Emitter Saturation Voltage Vce (sat) | lc=10mA, is=O0.5mA 0,25 Vv . : ic=50mA, [g=2.5mMA ; 0.21 v | Base-Emitter Saturation Voltage i Vee (sat) | lb=50mA, Ig=2.5mA | 0.85 Vv : Base-Emitter On Voltage ' Vee (on): f le=2MA, Voe=5V 06 | 0.75 Vv Current Gain-Bandwidth Product ify lc=10mA, Vce=5V 300 MHz i f=35MHz : * Output Capacitance | Cob Vea=10V, le=O 4 | pF : i f=1MHz Noise Figure j NF Ic=O0.2mA, Vce=5V : 10 dB | Re=2K0, f=1KHz i Marklag 4 K 4 tS ce SAMSUNG SEMICONDUCTOR 488