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12.5 Gb/s Driver Amplifier
PSPL5865 Datasheet
The Model PSPL5 86 5 D r iv er Ampli fier is int e nde d for us e dr iving
Lithium Niobate modulators or as a linear amplifier.
The PSPL5865 includes int ernal temperatur e c omp ens at ion for
excellent output stability over temperature, and exhibits both high
output and low power dissipation. It also incorporates internal
sequencing circuitry, making it insensitive to power supply
application sequence.
Key performance specifications
■ 8 V output amplitude 12.5 Gb/s Modulator Driver
■ Linear amplifier with 26 dB gain
■ 30 kHz to 12 GHz bandwidth
■ Temperature compensated design for output stability
■ Includes bias network, crossing point control & adjustable output voltage
Typical 10.66 Gb/s Eye Measurements
PSPL5865 12.5 Gb/s Driver Amplifier
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Specifications
Parameter
Symbol
Units
Min
Typical
Max
Comments
Impedance
Z
Ohms
50
Upper 3 dB freq.
f
c,h
GHz
12
Relative to gain at 2 GHz
Lower 3 dB freq.
f
c,l
kHz
30
Relative to gain at 2 GHz
Small signal gain
S21
dB
26.5
Measured at 2 GHz
Max Power Out
(-1 dB gain comp)
P1dB dBm 23.5 Measured at 2 GHz
Output Eye Voltage
with VGC = 0 V
VOUT Vamp 7.5 8.0
V
in
= 0.5 V
amp
, 12.5 Gb/s
PRBS
Output Eye Voltage
with VGC = -15 V
VOUT Vamp 1.0 2.0
V
in
= 0.5 V
amp
, 12.5 Gb/s
PRBS
Return Loss, Input
and Output
S11, S22 dB
-14
-11
12
9
50 MHz < f < 5 GHz
5 GHz ≤ f < 12 GHz
Rise Time
t
r
ps
32
41
10-90%, Vin = 0.5 Vamp,
12.5 Gb/s PRBS
Fall Time
t
f
ps
36
44
Additive Jitter
RMS
Peak-to-Peak
ps
pspp 0.7
4 2.0
8
V
in
= 0.5 V
amp
, 12.5 Gb/s
PRBS, meas. at crossing
point
Overshoot
%
5
12.5 Gb/s PRBS
Undershoot
%
5
12.5 Gb/s PRBS
Eff. Input RMS
Noise Voltage
µV rms 120
Noise Figure
NF
dB
5.75
6.5
f = 1 GHz
Output Eye Voltage
Variation
Δ VOUT % +/-3 +/-5
V
gc
= 0 V, V
in
= 0.5 V
amp
,
TCASE = -5 to 75°C
Crossing Point
Adjust
% +/- 15 +/- 20
+/- 5 V input at V
cp
, V
in
=
0.5 Vamp
Crossing Point
Variation
% +/- 1.0 +/- 2.0
V
in
= 0.5 V
amp
, 12.5 Gb/s
PRBS, TCASE = -5 to 75°C
Polarity
Coupling
RF Connectors
DC Connector
Datasheet
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Operating Specifications
Parameter
Symbol
Units
Min
Typical
Max
Comments
Voltage Supply (+)
+VDC
V
8
8
8.25
Voltage Supply (-)
-VDC
V
-5.25
-5
-4.75
Supply Current (+)
+IDC
mA
275
Vout = 8 Vamp [1]
Supply Current (-)
-IDC
mA
20
Power Dissipation
P
diss
W
2.3
2.6
V
out
= 8 V
amp
[2]
Max Allowed I nput
V
amp
1.5
Input damage threshold
Output Voltage Bias
V
bias
V
DC
-17
0
33
No connection required [3]
Gain Control Bias
Vgc
VDC
-15
0
0
No connection required
Crossing Point Bias
Vcp
VDC
-5
0
5
No connection required
Operating Temp
TCASE
Deg C
-5
75
Case temperature
Storage Temp
T
stor
Deg C
-40
125
Case tempurature
Warranty
One Year
Notes:
[1] The PSPL5865 may be damaged by excessive heat that is produced when driving low
duty cycle positive pulses. To ensure the amplifier will not be damaged by overheating, it is
recommended the positive supply voltage has its current limit set to 320 mA.
[2] Vgc may be utilized to lower the output level and power dissipated. Vcp > 0 V will lower
the crossing point and increase the power dissipated.
[3] A 2.5 kΩ resistor is connected to the output from the Vbias pin for adding a low current (≤
3.5mA) DC bias.
Microwave frequency response
PSPL5865 12.5 Gb/s Driver Amplifier
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Typical performance plots
Datasheet
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Instructions for use
The PSPL5865 12.5 Gb/s modulator driver may be operated using only three of the
available 7 pi ns. The DC pins req ui r ed for o per ati o n are 1, 3, and 7. The RF connectors
and DC pins are diagramed and defined below.
Warning: The PSPL5865 requires a ground connection at pin#7 prior to voltage application to prevent damage.
NOTES:
Note 1: At 8V , appr ox i mat el y 2.3W is dissipat ed.
Note 2: No power sequencing is necessary. Voltages may be applied in any order after
ground is applied.
Note 3: Output Control: With VGC at 0V, or left floating (disconnected), the driver will
provide maximum gain and maximum output voltage. The user may decrease VGC to
decrease the RF signal gain when the driver is operating in the linear regime, or to reduce
the output voltage level when the driver is operated in saturation (this will also reduce the
power dissipated).
Note 4: The crossing point may vary until unit achieves thermal equilibrium. VCP > 0 V will
lower the output crossing point and increase power dissipation. Care must be taken to
ensure that the positive supply current does not exceed 320 mA .
Note 5: Voltage Bias: The VB pin allows the user to apply a low current (less than 3.5 mA)
DC offset to the Signal Output for biasing electro-optic modulators through a 2.5 kΩ
resistor.
PSPL5865 12.5 Gb/s Driver Amplifier
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PSPL5865 Mechanical dimensions
Ordering information
Model Description
PSPL5865 12.5 GB/S DRIVER AMPLIFIER, SMA J-J
Datasheet
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PSPL5865 12.5 Gb/s Driver Amplifier
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29 May 2014 1PW-30537-0
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