NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 2 MARCH 1994
FEATURES
* 100 Volt VCEO
* 1 Amp continuous current
*P
tot = 1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL ZTX452 ZTX453 UNIT
Collector-Base Voltage VCBO 100 120 V
Collector-Emitter Voltage VCEO 80 100 V
Emitter-Base Voltage VEBO 5V
Peak Pulse Current ICM 2A
Continuous Collector Current IC1A
Power Dissipation at Tamb
=25°C Ptot 1W
Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER SYMBOL ZTX452 ZTX453 UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
Breakdown Voltage
V(BR)CBO 100 120 V IC=100µA
Collector-Emitter
Sustaining Voltage
VCEO(sus) 80 100 V IC=10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO 55V
IE=100µA
Collector Cut-Off
Current
ICBO 0.1
0.1 µA
µA
VCB
=80V
VCB
=100V
Emitter Cut-Off
Current
IEBO 0.1 0.1 µAVEB
=4V
Collector-Emitter
Saturation Voltage
VCE(sat) 0.7 0.7 V IC=150mA, IB=15mA*
Base-Emitter
Saturation Voltage
VBE(sat) 1.3 1.3 V IC=150mA, IB=15mA*
Static Forward
Current Transfer
Ratio
hFE 40
10
150 40
10
200 IC=150mA, VCE
=10V*
IC=1A, VCE
=10V*
Transition
Frequency
fT150 150 MHz IC=50mA, VCE=10V
f=100MHz
Output Capacitance Cobo 15 15 pF VCB
=10V, f=1MHz
E-Line
TO92 Compatible
ZTX452
ZTX453
3-177
C
B
E
TYPICAL CHARACTERISTICS
VCE(sat) v IC
IC - Collector Current (Amps)
V
CE(sat)
- (Volts)
IC - Collector Current (Amps)
VBE(on) v IC
V
BE
- (Volts)
0.6
0.8
1.0
1.2
1.4
0.001 0.01 100.1 1
I
C
- Collector Current (Amps)
VCE - Collector Voltage (Volts)
Safe Operating A r ea
0.1 100110
0.01
0.1
1
10 Single Pulse Test at Tamb=25°C
ZTX452
D.C.
1s
100ms
10ms
1.0ms
300µs
100µs
IC - Collector Current (Amps)
hFE v IC
h
FE
- Normalised Gain (%)
0.001 0.01 100.1 1
20
40
60
80
100
00.01 1
0.1
IC/IB=10
10
0.2
0.4
0.6
0.8
IC - Collector Current (Amps)
VBE(sat) v IC
V
BE(sat)
- (Volts)
0.4 0.01 1
0.1
0.6
IC/IB=10
10
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
VCE=10V
ZTX453
VCE=10V
ZTX452
ZTX453
3-178
NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 2 MARCH 1994
FEATURES
* 100 Volt VCEO
* 1 Amp continuous current
*P
tot = 1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL ZTX452 ZTX453 UNIT
Collector-Base Voltage VCBO 100 120 V
Collector-Emitter Voltage VCEO 80 100 V
Emitter-Base Voltage VEBO 5V
Peak Pulse Current ICM 2A
Continuous Collector Current IC1A
Power Dissipation at Tamb
=25°C Ptot 1W
Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER SYMBOL ZTX452 ZTX453 UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
Breakdown Voltage
V(BR)CBO 100 120 V IC=100µA
Collector-Emitter
Sustaining Voltage
VCEO(sus) 80 100 V IC=10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO 55V
IE=100µA
Collector Cut-Off
Current
ICBO 0.1
0.1 µA
µA
VCB
=80V
VCB
=100V
Emitter Cut-Off
Current
IEBO 0.1 0.1 µAVEB
=4V
Collector-Emitter
Saturation Voltage
VCE(sat) 0.7 0.7 V IC=150mA, IB=15mA*
Base-Emitter
Saturation Voltage
VBE(sat) 1.3 1.3 V IC=150mA, IB=15mA*
Static Forward
Current Transfer
Ratio
hFE 40
10
150 40
10
200 IC=150mA, VCE
=10V*
IC=1A, VCE
=10V*
Transition
Frequency
fT150 150 MHz IC=50mA, VCE=10V
f=100MHz
Output Capacitance Cobo 15 15 pF VCB
=10V, f=1MHz
E-Line
TO92 Compatible
ZTX452
ZTX453
3-177
C
B
E
TYPICAL CHARACTERISTICS
VCE(sat) v IC
IC - Collector Current (Amps)
V
CE(sat)
- (Volts)
IC - Collector Current (Amps)
VBE(on) v IC
V
BE
- (Volts)
0.6
0.8
1.0
1.2
1.4
0.001 0.01 100.1 1
I
C
- Collector Current (Amps)
VCE - Collector Voltage (Volts)
Safe Operating A r ea
0.1 100110
0.01
0.1
1
10 Single Pulse Test at Tamb=25°C
ZTX452
D.C.
1s
100ms
10ms
1.0ms
300µs
100µs
IC - Collector Current (Amps)
hFE v IC
h
FE
- Normalised Gain (%)
0.001 0.01 100.1 1
20
40
60
80
100
00.01 1
0.1
IC/IB=10
10
0.2
0.4
0.6
0.8
IC - Collector Current (Amps)
VBE(sat) v IC
V
BE(sat)
- (Volts)
0.4 0.01 1
0.1
0.6
IC/IB=10
10
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
VCE=10V
ZTX453
VCE=10V
ZTX452
ZTX453
3-178
