SEMiX151GAL12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 C 1200 V Tc = 25 C 232 A Tc = 80 C 179 A 150 A ICnom ICRM SEMiX(R)1s tpsc Trench IGBT Modules ICRM = 3xICnom 450 A -20 ... 20 V 10 s -40 ... 175 C Tc = 25 C 189 A Tc = 80 C 141 A 150 A 450 A VGES VCC = 800 V VGE 15 V Tj = 150 C VCES 1200 V Tj Inverse diode SEMiX151GAL12T4s IF Tj = 175 C IFnom Features * Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positive temperature coefficient * High short circuit capability * UL recognised file no. E63532 Typical Applications * AC inverter drives * UPS * Electronic Welding IFRM IFRM = 3xIFnom IFSM tp = 10 ms, sin 180, Tj = 25 C A -40 ... 175 C Tc = 25 C 189 A Tc = 80 C 141 A 150 A 450 A -40 ... 175 C Tj Freewheeling diode IF Tj = 175 C IFnom IFRM IFRM = 3xIFnom IFSM tp = 10 ms, sin 180, Tj = 25 C A Tj Module Remarks * Case temperature limited to TC=125C max. * Product reliability results are valid for Tj=150C It(RMS) Tstg Visol AC sinus 50Hz, t = 1 min 600 A -40 ... 125 C 4000 V Characteristics Symbol Conditions min. typ. max. Unit Tj = 25 C 1.8 2.05 V Tj = 150 C 2.20 2.4 V Tj = 25 C 0.8 0.9 V Tj = 150 C 0.7 0.8 V IGBT VCE(sat) IC = 150 A VGE = 15 V chiplevel VCE0 rCE VGE(th) ICES Cies Coes Cres VGE = 15 V Tj = 25 C 6.7 7.7 m Tj = 150 C 10.0 10.7 m VGE=VCE, IC = 6 mA VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V 5 Tj = 25 C 5.8 6.5 V 0.1 0.3 mA Tj = 150 C mA f = 1 MHz 9.3 nF f = 1 MHz 0.58 nF f = 1 MHz 0.51 nF QG VGE = - 8 V...+ 15 V 850 nC RGint Tj = 25 C 5.00 GAL (c) by SEMIKRON Rev. 43 - 24.10.2008 1 SEMiX151GAL12T4s Characteristics Symbol Conditions td(on) Eoff VCC = 600 V IC = 150 A Tj = 150 C RG on = 1 RG off = 1 di/dton = 3900 A/s di/dtoff = 2000 A/s Rth(j-c) per IGBT Rth(j-s) per IGBT tr Eon td(off) tf (R) SEMiX 1s Trench IGBT Modules Inverse diode VF = VEC IF = 150 A VGE = 0 V chiplevel VF0 SEMiX151GAL12T4s rF Features * Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positive temperature coefficient * High short circuit capability * UL recognised file no. E63532 Typical Applications * AC inverter drives * UPS * Electronic Welding Remarks * Case temperature limited to TC=125C max. * Product reliability results are valid for Tj=150C min. Tj = 25 C rF ns 70 ns 13.8 mJ K/W 2.5 V 2.1 2.4 V 1.3 1.5 V Tj = 150 C 0.7 0.9 1.1 V Tj = 25 C 4.3 5.6 6.4 m 7.8 8.5 m 6.7 115 A 23 C 8.9 mJ 0.31 K/W K/W Tj = 25 C 2.1 2.5 V Tj = 150 C 2.1 2.4 V V Tj = 25 C 1.1 1.3 1.5 Tj = 150 C 0.7 0.9 1.1 V Tj = 25 C 4.3 5.6 6.4 m 7.8 8.5 m Rth(j-s) per diode Err 410 1.1 Rth(j-c) Qrr mJ Tj = 25 C Tj = 150 C IF = 150 A Tj = 150 C di/dtoff = 3400 A/s T = 150 C j VGE = -15 V Tj = 150 C VCC = 600 V per diode IRRM ns 16.6 2.1 Tj = 150 C per diode Freewheeling diode VF = VEC IF = 150 A VGE = 0 V chiplevel VF0 ns K/W Rth(j-s) Err Unit 42 0.19 Rth(j-c) Qrr max. 185 Tj = 150 C IF = 150 A Tj = 150 C di/dtoff = 3400 A/s T = 150 C j VGE = -15 V T j = 150 C VCC = 600 V per diode IRRM typ. 6.7 115 A 23 C 8.9 mJ 0.31 K/W K/W Module LCE RCC'+EE' res., terminal-chip Rth(c-s) per module Ms to heat sink (M5) TC = 25 C TC = 125 C to terminals (M6) Mt 16 nH 0.7 m 1 m 0.075 K/W 3 5 Nm 2.5 5 Nm Nm w 145 g Temperature sensor R100 Tc=100C (R25=5 k) 0,493 5% k B100/125 R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 3550 2% K GAL 2 Rev. 43 - 24.10.2008 (c) by SEMIKRON SEMiX151GAL12T4s Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic (c) by SEMIKRON Rev. 43 - 24.10.2008 3 SEMiX151GAL12T4s Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Typ. transient thermal impedance Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode recovery charge 4 Rev. 43 - 24.10.2008 (c) by SEMIKRON SEMiX151GAL12T4s SEMiX 1s GAL This technical information specifies semiconductor devices. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. (c) by SEMIKRON Rev. 43 - 24.10.2008 5