2SA18153 - ON Semiconductor L.L.C.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

PNP Epitaxial Planar Silicon Transistors

FM, RF, MIX, IF Amplifier, High-Frequency

General-Purose Amplifier Applications

Ordering number:ENN4625

2SA1815

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

80103TN (KT)/91098HA (KT)/12894HO (KOTO) AX-8848 No.4625–1/3

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVesaB-ot-rotcelloCV

OBC 51–V

egatloVrettimE-ot-rotcelloCV

OEC 21–V

egatloVesaB-ot-rettimEV

OBE 3–V

tnerruCrotcelloCI

C05–Am

noitapissiDrotcelloCP

C052Wm

erutarepmeTnoitcnuJjT 051

erutarepmeTegarotSgtsT 051+ot55–

0.4

0.95 0.95

1.9

2.9

0.5

1.5

2.5

0.5

0.16

0 to 0.1

0.8

1.1

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Package Dimensions

unit:mm

2018B

[2SA1815]

Features

· High power gain : PG=25dB (f=100MHz).

· High cutoff frequency ; fT=750MHz typ.

· Low collector-to-emitter saturation voltage.

· Complementary pair with the 2SC4432.

˚C

Electrical Characteristics at Ta = 25˚C

1 : Base

2 : Emitter

3 : Collector

SANYO : CP

retemaraPlobmySsnoitidnoC sgnitaR tinU

nimpytxam

tnerruCffotuCrotcelloCI

OBC VBC I,V21–=E0=1.0–Aµ

tnerruCffotuCrettimEI

OBE VBE I,V2–=C0=1.0–Aµ

niaGtnerruCCDh

EF VEC I,V01–=CAm5–=*06*072

tcudorPhtdiwdnaB-niaGf

TVEC I,V01–=CAm5–=057zHM

ecnaticapaCtuptuOC

bo VBC zHM1=f,V01–=2.16.1Fp

ecnaticapaCrefsnarTesreveRC

er VBC zHM1=f,V01–=9.0Fp

egatloVnoitarutaSrettimE-ot-rotcelloCV

)tas(EC ICI,Am01–=BAm1–=1.0–3.0–V

niaGrewoPGPV

EC I,V01–=CzHM001=f,Am01–=52Bd

Marking : JS

hFE rank : 3, 4, 5

* : The 2SA1815 is calssified by 5mA hFE as follows :

knaR 345

hEF 021ot06081ot09072ot531

2SA1815

No.4625–2/3

OUTPUT

50Ω

INPUT

50Ω

to 30pF to 30pF

to 22pFto 22pF

to 5pF

L1 : 1mmØ plated wire 10mmØ 5T, pitch 15mm, tap : 2T from base side

L2 : 1mmØ plated wire 10mmØ 7T, pitch 10mm, tap : 2T from VC side

L3 : 1mmØ plated wire 10mmØ 3T, pitch 10mm

1000pF 1000pF

PG Test Circuit

100

--1.0 --100

3257 --10

325757 3257

--0.1

hFE -- IC

VCE=--10V

ITR04747

fT -- IC

100

1000

77253 --1.0 --10 253537

--100

ITR04748

VCE=--10V

ITR04749

Cob -- VCB

0.1

1.0

23 7755235

--0.1 --1.0 23 75--10 23 7755235

--0.1 --1.0 23 75--10

f=1MHz

ITR04750

Cre -- VCB

1.0

0.1

f=1MHz

DC Current Gain, hFE

Collector Current, IC– mA

Gain-Bandwidth Product, fT– MHz

Collector Current, IC– mA

Output Capacitance, Cob -- pF

Collector-to-Base Voltage, VCB -- V

Reverse Transfer Capacitance, Cre -- pF

Collector-to-Base Voltage, VCB -- V

Specifications of any and all SANYO products described or contained herein stipulate the performance,

characteristics, and functions of the described products in the independent state, and are not guarantees

of the performance, characteristics, and functions of the described products as mounted in the customer's

products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,

the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all

semiconductor products fail with some probability. It is possible that these probabilistic failures could

give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,

or that could cause damage to other property. When designing equipment, adopt safety measures so

that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective

circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or

contained herein are controlled under any of applicable local export control laws and regulations,

such products must not be exported without obtaining the export license from the authorities

concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or

mechanical, including photocopying and recording, or any information storage or retrieval system,

or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"

for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not

guaranteed for volume production. SANYO believes information herein is accurate and reliable, but

no guarantees are made or implied regarding its use or any infringements of intellectual property rights

or other rights of third parties.

This catalog provides information as of August, 2003. Specifications and information herein are subject to

change without notice.

2SA1815

PS No.4625–3/3

280

200

160

250

240

120

2006040 80 100 140120 160

PC -- Ta

ITR04753

PG -- IC

ITR04752

--100

--1000

57 2 3 57 2 3 57 2 3 57

--0.1 --1.0 --10 357 2357 2357

--1.0 --10 --100

VCE(sat) -- IC

IC / IB=10

ITR04751

VCE=10V

f=100MHz

Collector Current, IC– mA

Collector-to-Emitter

Saturation Voltage, VCE(sat) – mV

Power Gain, PG –dB

Collector Current, IC– mA

Collector Dissipation, PC– mW

Ambient Temperature, Ta – ˚C