1617-35 - GHz Technology, Inc.

R.1.A.990106-HERIC

GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS T HAT BE FORE T H E P RODUCT ( S ) DESCRIBE D HE REI N ARE

WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

GHz Technology In c. 3000 Oa kmead Village Dr ive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986- 8120

1617-35

35 Watts, 28 Volts, Pulsed

Radar 1540 - 1660 MHz

ADVANCED ISSUE

GENERAL DESCRIPTION

The 1617-35 is a high power COMMON BASE bipolar transistor. It is

designed for pulsed systems in the frequency band 1540 – 1660 MHz. The

transistor includes input and output prematch for broadband performance. The

device has gold thin-film metallization and diffused ballasting for proven

highest MTTF. Low thermal resistance Solder Sealed Package reduces junction

temperature, extends life.

CASE OUTLINE

55AT

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation

Device Dissipation @2 5 °C 290 W

Maximum Voltage and Current

Collector to Base Voltage (BVces)50V

Emitter to Base Voltage (B Vebo)3.0 V

Collector Current (Ic)6A

Maximu m T e mpe r a t u r e s

Storage Temperature -65 to +200 °C

Ope rating Junct i on T emper ature +200 °C

ELECTRICAL CHARACTERISTICS @ 2 5°

°°

°C

SYMB OL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS

Pout Power Out F = 1660 MHz 35 W

Pin Power Input Vcc = 28 Volts 6 W

PgPower Gain PW = Note 1 7.6 dB

ηcCollector Efficiency DF = Note 1 50 %

VSWR Load Mismatch Tolerance F = 1540 MHz 10:1

FUNCTIONAL CHARACTERISTICS @ 25°

°°

°C

BVebo Emitter to Base Breakdo wn Ie = 20 mA 3.0 V

BVces Collector to Emitter Breakdown Ic = 60 mA 50 V

hFE DC – Current Gain Vce = 5V, Ic = 500mA 20

θjc2Thermal Resista nce 0.6 °C/W

NOTE 1: 5 µs at 15% Duty

2. At rated pulse conditions

Initial Issue May 1999