2SC5658RM3T5G - ON Semiconductor

February, 2012 − Rev. 2

1Publication Order Number:

2SC5658M3/D

2SC5658M3T5G,

2SC5658RM3T5G

NPN Silicon General

Purpose Amplifier Transistor

This NPN transistor is designed for general purpose amplifier

applications. This device is housed in the SOT-723 package which is

designed for low power surface mount applications, where board

space is at a premium.

Features

•Reduces Board Space

•High hFE, 210−460 (typical)

•Low VCE(sat), < 0.5 V

•ESD Performance: Human Body Model; u 2000 V,

Machine Model; u 200 V

•Available in 8 mm, 7-inch/3000 Unit Tape and Reel

•These are Pb−Free Devices

MAXIMUM RATINGS (TA = 25°C)

Rating Symbol Value Unit

Collector-Base Voltage V(BR)CBO 50 Vdc

Collector-Emitter Voltage V(BR)CEO 50 Vdc

Emitter-Base Voltage V(BR)EBO 5.0 Vdc

Collector Current − Continuous IC100 mAdc

THERMAL CHARACTERISTICS

Rating Symbol Max Unit

Power Dissipation (Note 1) PD260 mW

Junction Temperature TJ150 °C

Storage Temperature Range Tstg −55 ~ +150 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Device mounted on a FR-4 glass epoxy printed circuit board using the

minimum recommended footprint.

http://onsemi.com

Device Package Shipping†

ORDERING INFORMATION

2SC5658M3T5G SOT−723

(Pb−Free)

3000/Tape & Reel

SOT−723

CASE 631AA

MARKING

DIAGRAM

XXM

XX = Specific Device Code

(B9 = 2SC5658M3T5G

RM = 2SC5658RM3T5G)

M = Date Code

COLLECTOR

BASE

EMITTER

NPN GENERAL

PURPOSE AMPLIFIER

TRANSISTORS

SURFACE MOUNT

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

2SC5658RM3T5G SOT−723

(Pb−Free)

3000/Tape & Reel

2SC5658M3T5G, 2SC5658RM3T5G

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C)

Characteristic Symbol Min Typ Max Unit

Collector-Base Breakdown Voltage (IC = 50 mAdc, IE = 0) V(BR)CBO 50 − − Vdc

Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 50 − − Vdc

Emitter-Base Breakdown Voltage (IE = 50 mAdc, IE = 0) V(BR)EBO 5.0 − − Vdc

Collector-Base Cutoff Current (VCB = 30 Vdc, IE = 0) ICBO − − 0.5 mA

Emitter-Base Cutoff Current (VEB = 4.0 Vdc, IB = 0) IEBO − − 0.5 mA

Collector-Emitter Saturation Voltage (Note 2)

(IC = 50 mAdc, IB = 5.0 mAdc)

VCE(sat)

− − 0.4

Vdc

DC Current Gain (Note 2)

(VCE = 6.0 Vdc, IC = 1.0 mAdc) 2SC5658M3T5G

(VCE = 6.0 Vdc, IC = 1.0 mAdc) 2SC5658RM3T5G

hFE

120

215

−

560

375

−

Transition Frequency (VCE = 12 Vdc, IC = 2.0 mAdc, f = 30 MHz) fT−180 −MHz

Output Capacitance (VCB = 12 Vdc, IC = 0 Adc, f = 1.0 MHz) COB −2.0 −pF

2. Pulse Test: Pulse Width ≤300 ms, D.C. ≤2%.

2SC5658M3T5G, 2SC5658RM3T5G

http://onsemi.com

TYPICAL ELECTRICAL CHARACTERISTICS

Figure 1. IC − VCE Figure 2. Collector Emitter Saturation Voltage

vs. Collector Current

Figure 3. Base Emitter Saturation Voltage vs.

Collector Current

Figure 4. DC Current Gain vs. Collector

Current

24 6 8

TA = 25°C160 mA

140 mA

120 mA

100 mA

80 mA

60 mA

40 mA

IB = 20 mA

Figure 5. Saturation Region Figure 6. Base−Emitter Turn−ON Voltage vs.

Collector Current

VCE, COLLECTOR VOLTAGE (V) IC, COLLECTOR CURRENT (mA)

0.01 0.1 1 10 100

0.1

0.01

VCE, COLLECTOR−EMITTER

SATURATION VOLTAGE (V)

IC, COLLECTOR CURRENT (mA)

TA = 150°C

TA = 25°C

TA = −55°C

IC/IB = 10

1.2

1.1

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.01 0.1 1 10 100

IC, COLLECTOR CURRENT (mA)

VBE(sat), BASE−EMITTER

SATURATION VOLTAGE (V)

TA = 150°C

TA = 25°C

TA = −55°C

IC/IB = 10

IC, COLLECTOR CURRENT (mA)

hFE, DC CURRENT GAIN

1000

100

0.1 1 10 100 1000

TA = 150°C

TA = 25°C

TA = −55°C

VCE = 6 V

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.01 0.1 1 10 100

IB, BASE CURRENT (mA)

VCE(sat), COLLECTOR−EMITTER

SATURATION VOLTAGE (V)

TA = 25°C

10 mA

30 mA

50 mA

IC = 100 mA

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1 1 10 100 1000

IC, COLLECTOR CURRENT (mA)

VBE(ON), BASE−EMITTER ON

VOLTAGE (V)

TA = −55°C

TA = 25°C

TA = 150°C

VCE = 2 V

2SC5658M3T5G, 2SC5658RM3T5G

http://onsemi.com

TYPICAL ELECTRICAL CHARACTERISTICS

Figure 7. Capacitance

100

VR, REVERSE VOLTAGE (V)

C, CAPACITANCE (pF)

Cibo

Cobo

0.1 1 10 100 0.1 1 10 100 1000

1000

100

ftau, CURRENT GAIN BANDWIDTH

PRODUCT (MHz)

Figure 8. Current Gain Bandwidth Product vs.

Collector Current

IC, COLLECTOR CURRENT (mA)

VCE = −2 V

TA = 25°C

Figure 9. Safe Operating Area

VCE, COLLECTOR REVERSE VOLTAGE (V)

IC, COLLECTOR CURRENT (mA)

1 10 100

1000

100

10 ms

100 ms

10 s

Thermal

Limit

2SC5658M3T5G, 2SC5658RM3T5G

http://onsemi.com

PACKAGE DIMENSIONS

SOT−723

CASE 631AA−01

ISSUE D

DIM MIN NOM MAX

MILLIMETERS

A0.45 0.50 0.55

b0.15 0.21 0.27

b1 0.25 0.31 0.37

C0.07 0.12 0.17

D1.15 1.20 1.25

E0.75 0.80 0.85

e0.40 BSC

H1.15 1.20 1.25

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME

Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD

FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM

THICKNESS OF BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD

FLASH, PROTRUSIONS OR GATE BURRS.

−Y−

−X−

X0.08 Y

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

L2 0.15 0.20 0.25

0.29 REF

TOP VIEW

BOTTOM VIEW

SIDE VIEW

RECOMMENDED

DIMENSIONS: MILLIMETERS

0.40

1.50

PACKAGE

OUTLINE

0.27

0.52

3X 0.36

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent

rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other

applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.

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Phone: 421 33 790 2910

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Phone: 81−3−5817−1050

2SC5658M3/D

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