SIEMENS Silicon Switching Diode Array @ For high-speed switching applications @ Connected in series SMBD 7000 VPS05161 Type Marking Ordering Code Pin Configuration Package) (tape and reel) SMBD 7000 s5C Q68000-A8440 3 SOT-23 1 2 EHAQ7005 Maximum Ratings Parameter Symbol Values Unit Reverse voltage Va 100 Vv Peak reverse voltage Vam 100 Forward current Ir 200 mA Surge forward current, t= 1 ps Irs 45 A Total power dissipation, Ts = 31 C Prot 330 mw Junction temperature Tj 150 C Storage temperature range Tstg ~65.,.+ 150 Thermal Resistance Junction - ambient?) Rin sa < 500 KW Junction - soldering point Rin ss < 360 1) For detailed information see chapter Package Outlines. 2} Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm? Cu. Semiconductor Group 1747 5.91SIEMENS SMBD 7000 Electrical Characteristics at Ta = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. |typ. | max. DC characteristics Breakdown voltage Vier) 100 - - Vv Forward voltage Ve mV le= 1mA 550 - 700 Ir= 10mA 670 - 820 Ir = 100 mA 750 - 1100 Reverse current Tr Va= 50V - ~ 300 nA Va = 100V - - 500 nA Va= 50 V, Ta= 125C - - 100 pA AC characteristics Diode capacitance Co ~ - 2 pF Va = 0, f= 1 MHz Reverse recovery time tr - - 15 ns le= 10 mA, jn = 10 mA, Ri = 1000 : Test circuit for reverse recovery time Specimen U th, Le 4 ft Oscillegraph 90% Ye Pulse generator: tp = 100 ns, D=0.05 tr=0.6 ns, Rj} =50Q Semiconductor Group ie, Oscillograph: R=502 ir = 0.35 ns C<1pF 1748SIEMENS SMBD 7000 Forward current /r= f (Ta*; Ts) Reverse current /s = f (Ta) * Package mounted on epoxy 300 SMBD 7000 HB00135 5 SWBO 7000 EHB001 36 10 iy nA mA I R 10* 200 5 NY NN Ny N 10 3 N N N N 5 N i, 100 Ns N\ 10? X W\ 0 3 10! o 50 100 C150 0 50 100 C 150 e Wah ts Forward current Ir = f (Vr) Peak forward current /rm = f (t) Ta = 25C Ta = 25C SMBD 7000 EHB001 37 150 fe tru A COMMCCIC OG 0.01770 ni UE | lh 10.0211 lit io Cs ST mA 100 10 50 107" 1072 0 8.5 10 V5 1o 10 10% 103 102 10's 10 ~- Vy, ~w f Semiconductor Group 1749SIEMENS SMBD 7000 Forward voltage Vr = f (7a) SMBD 7000 EHBOOTS9 1.0 0.5 0 50 100 C150 mT, Semiconductor Group 1750