Mini TOPLED(R) RG LS M770, LO M770, LY M770 LG M770, LP M770 Besondere Merkmale Gehausefarbe: wei als optischer Indikator einsetzbar zur Hinterleuchtung, Lichtleiter- und Linseneinkopplung fur alle SMT-Bestuck- und Lottechniken geeignet gegurtet (12-mm-Filmgurt) Storimpulsfest nach DIN 40839 VPL06926 Features color of package: white for use as optical indicator for backlighting, optical coupling into light pipes and lenses suitable for all SMT assembly and soldering methods available taped on reel (12 mm tape) load dump resistant acc. to DIN 40839 Semiconductor Group 1 11.96 LS M770, LO M770, LY M770 LG M770, LP M770 Typ Emissionsfarbe Type Color of Emission LS M770-HK LS M770-J LS M770-K LS M770-JM super-red LO M770-HK LO M770-J LO M770-K LO M770-JM Farbe der Lichtaustrittsflache Color of the Light Emitting Area Lichtstarke Lichtstrom Bestellnummer Luminous Intensity IF = 10 mA I V (mcd) Luminous Flux IF = 10 mA V (mlm) Ordering Code colorless clear 2.5 ... 12.5 4.0 ... 8.0 6.3 ... 12.5 4.0 ... 32.0 18 (typ.) 30 (typ.) - Q62703-Q3326 Q62703-Q3327 Q62703-Q3328 Q62703-Q3329 orange colorless clear 2.5 ... 12.5 4.0 ... 8.0 6.3 ... 12.5 4.0 ... 32.0 18 (typ.) 30 (typ.) - Q62703-Q3330 Q62703-Q3331 Q62703-Q3332 Q62703-Q3333 LY M770-HK LY M770-J LY M770-K LY M770-JM yellow colorless clear 2.5 ... 12.5 4.0 ... 8.0 6.3 ... 12.5 4.0 ... 32.0 18 (typ.) 30 (typ.) - Q62703-Q3334 Q62703-Q3336 Q62703-Q3335 Q62703-Q3337 LG M770-HK LG M770-J LG M770-K LG M770-JM green colorless clear 2.5 ... 12.5 4.0 ... 8.0 6.3 ... 12.5 4.0 ... 32.0 18 (typ.) 30 (typ.) - Q62703-Q3338 Q62703-Q3339 Q62703-Q3340 Q62703-Q3341 LP M770-FJ LP M770-G LP M770-H LP M770-GK pure green colorless clear 1.0 ... 8.0 1.6 ... 3.2 2.5 ... 5.0 1.6 ... 12.5 - Q62703-Q3342 Q62703-Q3343 Q62703-Q3344 Q62703-Q3345 8 (typ.) 12 (typ.) - Streuung der Lichtstarke in einer Verpackungseinheit I V max / I V min 2.0. Luminous intensity ratio in one packaging unit I V max / I V min 2.0. Semiconductor Group 2 LS M770, LO M770, LY M770 LG M770, LP M770 Grenzwerte Maximum Ratings Bezeichnung Parameter Symbol Symbol Werte Values Einheit Unit Betriebstemperatur Operating temperature range Top - 55 ... + 100 C Lagertemperatur Storage temperature range Tstg - 55 ... + 100 C Sperrschichttemperatur Junction temperature Tj + 100 C Durchlastrom Forward current IF 30 mA Stostrom Surge current t 10 s, D = 0.005 IFM 0.5 A Sperrspanung Reverse voltage VR 5 V Verlustleistung Power dissipation Ptot 100 mW Warmewiderstand Thermal resistance Sperrschicht / Umgebung Junction / air Montage auf PC-board*) (Padgroe 16 mm2) mounted on PC board*) (pad size 16 mm2) Rth JA 530 K/W *) PC-board: FR4 Semiconductor Group 3 LS M770, LO M770, LY M770 LG M770, LP M770 Kennwerte (TA = 25 C) Characteristics Bezeichnung Parameter Symbol Symbol Werte Values Einheit Unit LS LO LY LG LP Wellenlange des emittierten Lichtes Wavelength at peak emission IF = 10 mA (typ.) (typ.) peak 635 610 586 565 557 nm Dominantwellenlange Dominant wavelength IF = 10 mA (typ.) (typ.) dom 628 605 590 570 560 nm Spektrale Bandbreite bei 50 % Irel max Spectral bandwidth at 50 % Irel max IF = 10 mA (typ.) (typ.) 45 40 45 25 22 nm 2 120 120 120 120 120 Grad deg. 2.0 2.6 2.0 2.6 2.0 2.6 2.0 2.6 V V Abstrahlwinkel bei 50 % Iv (Vollwinkel) Viewing angle at 50 % Iv Durchlaspannung Forward voltage IF = 10 mA (typ.) (max.) VF VF 2.0 2.6 Sperrstrom Reverse current VR = 5 V (typ.) (max.) IR IR 0.01 0.01 0.01 0.01 0.01 A 10 10 10 10 10 A (typ.) C0 12 8 10 15 15 pF (typ.) (typ.) tr tf 300 150 300 150 300 150 450 200 450 200 ns ns Kapazitat Capacitance VR = 0 V, f = 1 MHz Schaltzeiten: Switching times: IV from 10 % to 90 % IV from 90 % to 10 % IF = 100 mA, tp = 10 s, RL = 50 Semiconductor Group 4 LS M770, LO M770, LY M770 LG M770, LP M770 Relative spektrale Emission Irel = f (), TA = 25 C, IF = 10 mA Relative spectral emission V() = spektrale Augenempfindlichkeit Standard eye response curve Abstrahlcharakteristik Irel = f () Radiation characteristic Semiconductor Group 5 LS M770, LO M770, LY M770 LG M770, LP M770 Durchlastrom IF = f (VF) Forward current TA = 25 C Relative Lichtstarke IV/IV(10 mA) = f (IF) Relative luminous intensity TA = 25 C Zulassige Impulsbelastbarkeit IF = f (tp) Permissible pulse handling capability Duty cycle D = parameter, TA = 25 C Maximal zulassiger Durchlastrom Max. permissible forward current IF = f (TA) Semiconductor Group 6 LS M770, LO M770, LY M770 LG M770, LP M770 Wellenlange der Strahlung peak = f (TA) Wavelength at peak emission IF = 10 mA Dominantwellenlange dom = f (TA) Dominant wavelength IF = 10 mA Durchlaspannung VF = f (TA) Forward voltage IF = 10 mA Relative Lichtstarke IV / IV(25 C ) = f (TA) Relative luminous intensity IF = 10 mA Semiconductor Group 7 LS M770, LO M770, LY M770 LG M770, LP M770 (Mae in mm, wenn nicht anders angegeben) (Dimensions in mm, unless otherwise specified) GPL06926 Mazeichnung Package Outlines Kathodenkennung: abgeschragte Ecke Cathode mark: bevelled edge Semiconductor Group 8